Semiconductor device and manufacturing method thereof
A semiconductor device includes a first interlayer dielectric (ILD) layer disposed over a substrate, and a first metal wiring pattern formed in the first interlayer dielectric layer and extending in a first direction parallel with the substrate. In a cross section along a second direction which crosses the first direction and is in parallel with the substrate, a top of the first metal wiring pattern is covered by a first two-dimensional material layer.
1. A semiconductor device, comprising:
a first metal wiring pattern disposed over a substrate;
a single layer of a first two-dimensional material layer covering sides and bottom of the first metal wiring pattern as seen in cross section;
a second metal wiring pattern disposed over the first metal wiring pattern and connected to the first metal wiring pattern;
a single layer of a second two-dimensional material layer covering sides and bottom of the second metal wiring pattern as seen in cross section,
wherein the second two-dimensional material layer is disposed between the second wiring pattern and the first wiring pattern; and
a single layer of a third two-dimensional material layer covering a top of the second metal wiring pattern,
wherein the second two-dimensional material layer and the third two-dimensional material layer are different materials.
2. The semiconductor device of claim 1 , wherein the first two-dimensional material layer includes graphene.
3. The semiconductor device of claim 1 , wherein the first two-dimensional material layer and the second two-dimensional material layer include a same material.
4. The semiconductor device of claim 1 , wherein the first two-dimensional material layer and the second two-dimensional material layer are different materials.
5. The semiconductor device of claim 1 , wherein the first two-dimensional material layer and the second two-dimensional material layer include a transition metal dichalcogenide (TMD) or BN.
6. The semiconductor device of claim 5 , wherein the TMD includes one of MoS 2 , WS 2 and NbSe 2 .
7. A semiconductor device, comprising:
a first etch stop layer disposed over a substrate;
a first metal wiring pattern disposed over the first etch stop layer;
a single layer of a first two-dimensional material layer covering sides of the first metal wiring pattern and disposed between the first metal wiring pattern and the first etch stop layer as seen in cross section;
a single layer of a second two-dimensional material layer covering a first portion of a top of the first wiring pattern;
a single layer of a third two-dimensional material layer covering a second portion of the top of the first wiring pattern;
a second wiring pattern disposed over the first wiring pattern,
wherein the single layer of third two-dimensional material layer is disposed between the first wiring pattern and the second wiring pattern, and the single layer of the third two-dimensional material layer is disposed on sides of the second wiring pattern as seen in cross section, and
wherein the third two-dimensional material layer and the second two-dimensional material layer are different materials; and
a second etch stop layer disposed over second two-dimensional material layer.
8. The semiconductor device of claim 7 , further comprising a fourth two-dimensional material layer covering the top of the second metal wiring pattern.
9. The semiconductor device of claim 8 , wherein the third two-dimensional material layer and the fourth two-dimensional material layer include a same material.
10. The semiconductor device of claim 8 , wherein the third two-dimensional material layer and the fourth two-dimensional material layer are different materials.
11. The semiconductor device of claim 7 , wherein the second two-dimensional material layer covering the top of the first metal wiring pattern only covers the first metal wiring pattern.
12. The semiconductor device of claim 7 , wherein:
the first and second metal wiring patterns include Cu, and
the first two-dimensional material layer is in direct contact with a Cu surface of the first metal wiring pattern.
13. The semiconductor device of claim 7 , wherein the lower portion of the second metal wiring pattern is in direct contact with the third two-dimensional material layer.
14. The semiconductor device of claim 7 , wherein the first two-dimensional material layer and the third two-dimensional material layer include a same material.
15. The semiconductor device of claim 7 , wherein the first two-dimensional material layer and the third two-dimensional material layer are different materials.
16. A semiconductor device, comprising:
a first metal layer disposed over a substrate;
a single layer of a first two-dimensional material layer surrounding sides and bottom of the first metal layer as seen in cross section;
a single layer of a second two-dimensional material layer disposed over a top of the first metal layer as seen in the cross section,
wherein the first two-dimensional material layer and the second two-dimensional material layer are different materials;
an etch stop layer disposed over the second two-dimensional material layer;
a second metal layer disposed over the first metal wiring pattern and connected to the first metal wiring pattern;
a single layer of a third two-dimensional material layer surrounding sides and a bottom of the second metal layer as seen in the cross section,
wherein the third two-dimensional material layer passes through the etch stop layer and the second two-dimensional material layer.
17. The semiconductor device of claim 16 , further comprising a fourth two-dimensional material layer covering the top of the second metal wiring pattern.
18. The semiconductor device of claim 17 , wherein the second two-dimensional material layer and the fourth two-dimensional layer include a same material.
19. The semiconductor device of claim 16 , wherein the first two-dimensional material layer and the third two-dimensional material layer include a same material.
20. The method according to claim 16 , wherein the first two-dimensional material layer and the second two-dimensional material layer are different materials.