Gas cluster assisted plasma processing
A method for processing a substrate includes forming a patterned layer over the substrate, the layer including an opening, where a surface of the opening includes a sidewall and a bottom wall. The method includes processing the patterned layer with an anisotropic process by generating a flux of gas clusters over the substrate in a first process chamber, where the gas clusters include radical precursors; exposing the substrate to the flux of gas clusters. The method includes sustaining plasma including ions in a second process chamber; and exposing the substrate to the ions by directing the ions toward the bottom wall of the opening.
1. A system for processing a substrate, the system comprising:
a first subsystem comprising:
a plenum comprising a first gas inlet;
a nozzle assembly comprising a plurality of nozzles, wherein an intake aperture of each of the plurality of nozzles is disposed inside the plenum, and wherein a first nozzle of the plurality of nozzles is a polarizing nozzle, the polarizing nozzle further comprising a dielectric matrix embedded with two conductive layers electrically insulated by the dielectric matrix, wherein the two conductive layers are configured to be electrically coupled to a pulsed DC bias source; and
a gas cluster process chamber connected to the plenum through the plurality of nozzles of the nozzle assembly, the gas cluster process chamber being coupled with a second gas inlet, the second gas inlet being below the nozzle assembly; and
a gas flow system connected to the first gas inlet, the second gas inlet, and a gas outlet of the gas cluster process chamber, wherein the gas flow system is configured to generate a flux of gas clusters in the gas cluster process chamber and to introduce a gaseous mixture through the second gas inlet; and
a second subsystem comprising:
a power source for powering a plasma from the gaseous mixture in the gas cluster process chamber.
2. The system of claim 1 , wherein an exit aperture of each of the plurality of nozzles is disposed outside the plenum, wherein each of the plurality of nozzles is shaped like a tube, a truncated cone, a funnel having a stem coupled to the plenum, or a convergent-divergent de Laval nozzle.
3. The system of claim 1 , wherein each nozzle of the nozzle assembly has:
a length greater than or equal to 1 cm and less than or equal to 10 cm;
a throat width greater than or equal to 0.5 mm and less than or equal to 1 mm; and
an expansion ratio greater than or equal to 1 and less than or equal to 10.
4. The system of claim 1 , wherein the first subsystem further comprises a cooling system coupled to the plenum, wherein the cooling system is configured to control the temperature of the gas in the plenum at a target value greater than or equal to 100 K and less than or equal to 310 K.
5. The system of claim 1 , wherein the gaseous mixture comprises tetrafluoromethane, hexafluorocyclobutene, octafluorocyclobutane, nitrogen trifluoride, oxygen, argon, or helium.
6. A system for processing a substrate, the system comprising:
a first subsystem comprising:
a plenum comprising a gas inlet;
a nozzle assembly comprising a plurality of nozzles and a first nozzle disposed adjacent the plurality of nozzles, the first nozzle being a polarizing nozzle, the polarizing nozzle further comprising a dielectric matrix embedded with two conductive layers electrically insulated by the dielectric matrix, wherein the two conductive layers are configured to be electrically coupled to a pulsed DC bias source, a respective intake aperture of the first nozzle and respective intake apertures of each of the plurality of nozzles being disposed inside the plenum; and
a gas cluster process chamber connected to the plenum through the plurality of nozzles of the nozzle assembly; and
a gas flow system connected to the gas inlet and a gas outlet of the gas cluster process chamber, the gas flow system being configured to generate a flux of gas clusters in the gas cluster process chamber; and
a second subsystem comprising:
a substrate processing chamber disposed outside the plenum and configured to sustain a plasma, the first nozzle having an exit aperture coupled to the substrate processing chamber; and
a power source for powering a plasma in the substrate processing chamber.
7. The system of claim 6 , wherein the first nozzle has an expansion ratio greater than or equal to unity, and wherein the first nozzle is shaped like a tube, a truncated cone, a funnel having a stem coupled to the plenum, or a convergent-divergent de Laval nozzle.
8. The system of claim 6 , further comprising a cooling system coupled to the plenum, wherein the cooling system is configured to control the temperature of a gas in the plenum at a target value greater than or equal to 100 K and less than or equal to 310 K.
9. The system of claim 6 , wherein the substrate processing chamber comprises a second gas inlet and a substrate holder, and wherein the gas flow system is further connected to the second gas inlet and the gas outlet.
10. The system of claim 9 , wherein the substrate holder is coupled to a pulsed DC bias source or a radio frequency (RF) bias power source.
11. The system of claim 9 , further comprising an electrode coupled to a radio frequency (RF) power source, wherein the electrode is shaped like a coil disposed outside the substrate processing chamber, and wherein the electrode is configured to sustain inductively coupled plasma (ICP) inside the substrate processing chamber.
12. The system of claim 9 , further comprising an electron beam ionizer coupled to the substrate processing chamber, wherein the electron beam ionizer is configured to direct a beam of energetic electrons to intercept the flux of gas clusters in the substrate processing chamber.
13. A system for processing a substrate, the system comprising:
a first subsystem comprising:
a plenum comprising a gas inlet;
a nozzle assembly comprising a plurality of nozzles, a first nozzle of the plurality of nozzles being a polarizing nozzle, the polarizing nozzle further comprising a dielectric matrix embedded with two conductive layers electrically insulated by the dielectric matrix, wherein the two conductive layers are configured to be electrically coupled to a pulsed DC bias source, an intake aperture of each of the plurality of nozzles being disposed inside the plenum; and
a gas cluster process chamber connected to the plenum through the plurality of nozzles of the nozzle assembly; and
a gas flow system connected to the gas inlet and a gas outlet of the gas cluster process chamber, wherein the gas flow system is configured to:
generate a flux of gas clusters in the gas cluster process chamber, the gas clusters comprising radical precursors; and
expose a substrate disposed in the gas cluster process chamber to the flux of gas clusters; and
a second subsystem comprising:
a plasma process chamber; and
a power source for powering a plasma in the plasma process chamber, the plasma comprising ions, the plasma process chamber being configured to expose the substrate to the ions.
14. The system of claim 13 , wherein generating the flux of gas clusters and exposing the substrate to the flux of gas clusters comprises:
loading the substrate into the gas cluster process chamber;
introducing a gas under pressure into the plenum through the gas inlet of the plenum; and
flowing the gas from the plenum to the gas cluster process chamber through a nozzle of the plurality of nozzles, the nozzle having an expansion ratio greater than or equal to unity.
15. The system of claim 14 , wherein the flowing the gas comprises applying a gas pressure less than or equal to 760 Torr in the plenum.
16. The system of claim 14 , wherein the flowing the gas cools the gas to form a gas cluster condensate in the gas cluster process chamber.
17. The system of claim 13 , wherein the gas cluster process chamber and the plasma process chamber are integrated as part of a combined gas cluster and plasma process chamber.
18. The system of claim 13 , wherein the first nozzle of the plurality of nozzles is shaped like a tube.
19. The system of claim 13 , wherein the first nozzle of the plurality of nozzles is shaped like a truncated cone.
20. The system of claim 13 , wherein the first nozzle of the plurality of nozzles is shaped like a funnel having a stem coupled to the plenum.
21. The system of claim 13 , wherein the first nozzle of the plurality of nozzles is shaped like a convergent-divergent de Laval nozzle.