DIRECT COOLING POWER SEMICONDUCTOR PACKAGE
A direct cooling power semiconductor package includes a power package and a cooling structure. The power package includes at least a power device on a first surface of a substrate, and the cooling structure is disposed on a second surface of the substrate, wherein the second surface and the first surface are opposite to each other, and the cooling structure includes a housing covering the second surface to form a containing space, a cooling liquid fluid or gas filled in the containing space, and a plurality of semi-closed metal structures. The semi-closed metal structures are in direct contact with the second surface in the housing.
1 . A direct cooling power semiconductor package, comprising:
a power package comprising at least one power device on a first surface of a substrate; and
a cooling structure, disposed on a second surface of the substrate, wherein the second surface and the first surface are opposite to each other, and the cooling structure comprises a housing covering the second surface to form a containing space, a cooling liquid fluid or gas filled in the containing space, and a plurality of semi-closed metal structures which is in direct contact with the second surface in the housing.
2 . The direct cooling power semiconductor package according to claim 1 , wherein the semi-closed metal structures are orderly distributed.
3 . The direct cooling power semiconductor package according to claim 1 , wherein the semi-closed metal structures are separated from each other by a gap.
4 . The direct cooling power semiconductor package according to claim 1 , wherein every N of the semi-closed metal structures forms a sub-structure, and N is odd.
5 . The direct cooling power semiconductor package according to claim 4 , wherein the sub-structure comprises a multi-layered structure.
6 . The direct cooling power semiconductor package according to claim 1 , wherein the semi-closed metal structures are trigonal structures, tetragonal structures, hexagonal structures, or a combination thereof.
7 . The direct cooling power semiconductor package according to claim 1 , wherein the semi-closed metal structures are hexagonal structures, each of the semi-closed metal structures consists of six sheets, and each sheets has an inner surface, an outer surface, and two opposite edges between the inner surface and the outer surface.
8 . The direct cooling power semiconductor package according to claim 7 , wherein the outer surface of one of the six sheets is in direct contact with the second surface.
9 . The direct cooling power semiconductor package according to claim 7 , wherein a length of each of the two opposite edges is 8-10 mm.
10 . The direct cooling power semiconductor package according to claim 7 , wherein a width of each of the six sheets is 1-5 mm.
11 . The direct cooling power semiconductor package according to claim 7 , wherein a thickness of each of the six sheets is 1-5 mm.
12 . The direct cooling power semiconductor package according to claim 7 , wherein a height of each of the semi-closed metal structures is 5-8 mm.
13 . The direct cooling power semiconductor package according to claim 1 , wherein each of the semi-closed metal structures is the same in size or shape.
14 . The direct cooling power semiconductor package according to claim 1 , wherein each of the semi-closed metal structures is different in size or shape.
15 . The direct cooling power semiconductor package according to claim 1 , wherein the semi-closed metal structures are connected to form a net structure.
16 . The direct cooling power semiconductor package according to claim 1 , wherein the substrate comprises a metal plate or a metal laminated substrate.
17 . The direct cooling power semiconductor package according to claim 16 , wherein the metal laminated substrate comprises an insulated metal substrate (IMS) or a direct bonded copper substrate (DBC).
18 . The direct cooling power semiconductor package according to claim 1 , further comprising:
another substrate, disposed on a surface of the power package opposite to the cooling structure; and
another cooling structure, disposed on the another substrate opposite to the power package.
19 . The direct cooling power semiconductor package according to claim 18 , wherein the another cooling structure is the same as the cooling structure disposed on the second surface of the substrate.