Monolithic infrared transceiver
An optoelectronic device includes a semiconductor substrate and a first stack of epitaxial layers, which are disposed over the semiconductor substrate and are configured to function as a photodetector, which emits a photocurrent in response to infrared radiation in a range of wavelengths greater than 940 nm. A second stack of epitaxial layers is disposed over the first stack and configured to function as an optical transmitter with an emission wavelength in the range of wavelengths greater than 940 nm.
1. An optoelectronic device, comprising:
a semiconductor substrate;
a first stack of epitaxial layers, comprising a p-doped layer, an intrinsic absorption layer, and an n-doped layer, which are disposed over the semiconductor substrate and are configured to function as a photodiode, which emits a photocurrent in response to infrared radiation in a range of wavelengths greater than 940 nm; and
a second stack of epitaxial layers, which are disposed over the first stack and are configured to function as a vertical-cavity surface-emitting laser (VCSEL), comprising a lower distributed Bragg reflector (DBR), a quantum well layer disposed over the lower DBR, and an upper DBR disposed over the quantum well layer, with an emission wavelength in the range of wavelengths greater than 940 nm,
wherein the photodiode is interleaved within the lower DBR.
2. The device according to claim 1 , wherein at least one of the epitaxial layers in the first stack serves as a part of the lower DBR.
3. The device according to claim 1 , wherein the semiconductor substrate comprises GaAs.
4. The device according to claim 3 , wherein at least the first stack of the epitaxial layers comprises an absorbing layer of InGaAsN.
5. The device according to claim 4 , wherein the layer of InGaAsN comprises In x Ga 1-x As y N 1-y , having composition parameters x and y selected so as to match a lattice constant of the GaAs.
6. The device according to claim 1 , wherein the semiconductor substrate comprises germanium, and at least the first stack of the epitaxial layers comprises an absorbing layer of germanium.
7. The device according to claim 1 , wherein the second stack of the epitaxial layers comprises a quantum-well layer comprising InGaAs.
8. The device according to claim 1 , wherein the second stack of the epitaxial layers comprises a quantum-well layer comprising In x Ga 1-x As y N 1-y , wherein the emission wavelength of the optical transmitter is determined by respective values of x and y.
9. The device according to claim 1 , wherein the emission wavelength of the optical transmitter is at least 1300 nm, and the photodetector emits the photocurrent in response to infrared radiation in a range of wavelengths greater than 1300 nm.
10. An optoelectronic device, comprising:
a semiconductor substrate comprising GaAs;
a first stack of epitaxial layers, which are disposed over the semiconductor substrate and are configured to function as a photodetector, which emits a photocurrent in response to infrared radiation in a range of wavelengths greater than 940 nm; and
a second stack of epitaxial layers, which are disposed over the first stack and are configured to function as an optical transmitter with an emission wavelength in the range of wavelengths greater than 940 nm,
wherein at least the first stack of the epitaxial layers comprises an absorbing layer of germanium.
11. The device according to claim 10 , wherein the photodetector comprises a photodiode, and the first stack of the epitaxial layers comprises a p-doped layer, an intrinsic absorption layer, and an n-doped layer.
12. The device according to claim 11 , wherein the optical transmitter comprises a vertical-cavity surface-emitting laser (VCSEL), comprising a lower distributed Bragg reflector (DBR), a quantum well layer disposed over the lower DBR, and an upper DBR disposed over the quantum well layer.
13. The device according to claim 12 , wherein the lower DBR is disposed over the p-doped layer, the intrinsic absorption layer, and the n-doped layer of the photodiode.
14. A method for producing an optoelectronic device, the method comprising:
depositing a first stack of epitaxial layers, comprising a p-doped layer, an intrinsic absorption layer, and an n-doped layer, on a semiconductor substrate so as to form a photodiode, which emits a photocurrent in response to infrared radiation in a range of wavelengths greater than 940 nm; and
depositing a second stack of epitaxial layers over the first stack so as to form a vertical-cavity surface-emitting laser (VCSEL), comprising a lower distributed Bragg reflector (DBR), a quantum well layer disposed over the lower DBR, and an upper DBR disposed over the quantum well layer, with an emission wavelength in the range of wavelengths greater than 940 nm,
wherein the photodiode is interleaved within the lower DBR.
15. The method according to claim 14 , wherein the semiconductor substrate comprises GaAs, and wherein at least the first stack of the epitaxial layers comprises an absorbing layer of InGaAsN.
16. The method according to claim 15 , wherein the layer of InGaAsN comprises In x Ga 1-x As y N 1-y , having composition parameters x and y selected so as to match a lattice constant of the GaAs.
17. The method according to claim 14 , wherein depositing the first stack of the epitaxial layers comprises forming an absorbing layer of intrinsic germanium.