IP Library › Granted Patent US 11,721,562
Granted Patent B2
US 11,721,562 · App. 17/014,335 · Granted Aug 8, 2023

Substrate bonding apparatus

Inventors: Hyungjun Jeon (Seoul, KR); Taeyeong Kim (Yongin-si, KR); Hoechul Kim (Seoul, KR); Junhong Min (Ulsan, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
H01L21/67017B32B37/003B32B37/0046B32B41/00H01L21/67092H01L24/74B32B2309/02B32B2309/12B32B2309/60B32B2457/14H01L21/6838H01L21/68742H01L25/50H01L27/1469
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Quick Facts
Patent No.
US 11,721,562
App. No.
17/014,335
Granted
Aug 8, 2023
Kind
B2
Abstract

A substrate bonding apparatus for bonding a first substrate to a second substrate includes a first bonding chuck configured to fix the first substrate to a first surface of the first bonding chuck; a second bonding chuck configured to fix the second substrate to a second surface of the second bonding chuck, the second surface facing the first surface; a process gas injector surrounding at least one selected from the first bonding chuck and the second bonding chuck in a plan view, the process gas injector configured to inject a process gas between the first substrate and the second substrate when respectively disposed on the first bonding chuck and the second bonding chuck; and an air curtain generator disposed at an outside of the process gas injector in the plan view, the air curtain generator configured to inject an air curtain forming gas to form an air curtain surrounding the first substrate and the second substrate.

Claims (16)

1. A substrate bonding apparatus for bonding a first substrate to a second substrate, the substrate bonding apparatus comprising:

a first bonding chuck configured to fix the first substrate to a first surface of the first bonding chuck;

a second bonding chuck configured to fix the second substrate to a second surface of the second bonding chuck, the second surface facing the first surface;

a process gas injector surrounding at least one selected from the first bonding chuck and the second bonding chuck in a plan view, the process gas injector configured to inject a process gas between the first substrate and the second substrate when respectively disposed on the first bonding chuck and the second bonding chuck; and

an air curtain generator disposed at an outside of the process gas injector in the plan view, the air curtain generator configured to inject an air curtain forming gas to form an air curtain surrounding the first substrate and the second substrate.

2. The substrate bonding apparatus of claim 1 , wherein the process gas injector has a process gas injection hole having a ring shape configured to surround, in the plan view, the first substrate and the second substrate when respectively disposed on the first surface and the second surface.

3. The substrate bonding apparatus of claim 1 , wherein the process gas injector is configured to inject the process gas in a first direction from an edge portion toward a central portion of the first substrate when disposed on the first surface of the first bonding chuck, and

the air curtain generator is configured to inject the air curtain forming gas in a second direction perpendicular to the first direction.

4. The substrate bonding apparatus of claim 1 , further comprising a controller connected to the process gas injector and the air curtain generator and configured to control at least one selected from a kind, a flow rate, a temperature, a pressure, and a speed of the process gas and the air curtain forming gas.

5. The substrate bonding apparatus of claim 4 , wherein the process gas injector includes an injection angle adjuster configured to adjust an injection angle of the process gas, and

the controller is further configured to control the injection angle adjuster while a bonding between the first substrate and the second substrate is performed.

6. The substrate bonding apparatus of claim 4 , wherein the second bonding chuck is configured to be aligned above the first bonding chuck after the first and second substrates are respectively fixed on the first and second surfaces of the first and second bonding chucks, and

the controller is configured to control the process gas injector and the air curtain generator to inject the process gas and the air curtain forming gas before the second bonding chuck is aligned above the first bonding chuck.

7. The substrate bonding apparatus of claim 4 , wherein the second bonding chuck is configured to be aligned above the first bonding chuck after the first and second substrates are respectively fixed on the first and second surfaces of the first and second bonding chucks, and

the controller is configured to control the process gas injector and the air curtain generator to inject the process gas and the air curtain forming gas after the second bonding chuck is aligned above the first bonding chuck.

8. The substrate bonding apparatus of claim 4 , wherein the controller is configured to control the process gas injector and the air curtain generator to inject the process gas and the air curtain forming gas after the first substrate is at least partially bonded to the second substrate.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 25, 2020
From: JEON, HYUNGJUN; KIM, TAEYEONG; KIM, HOECHUL; MIN, JUNHONG
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 053880/0367 →
Priority Claims (1)
KR 10-2019-0141901 · Nov 7, 2019 · national
Continuity (1)
Related Publication 20210143026A1 · May 13, 2021