Bump structure and method of manufacturing bump structure

1. A method of manufacturing a bump structure, comprising:

forming a passivation layer over a substrate;

forming a metal pad structure over the substrate, wherein the passivation layer surrounds the metal pad structure;

forming a polyimide layer comprising a polyimide over the passivation layer and the metal pad structure; and

forming a metal bump over the metal pad structure and the polyimide layer, wherein the polyimide is a reaction product of a dianhydride and a diamine, wherein at least one of the dianhydride and the diamine comprises one selected from the group consisting of a cycloalkane, a fused ring, a bicycloalkane, a tricycloalkane, a bicycloalkene, a tricycloalkene, a spiroalkane, and a heterocyclic ring,

wherein the forming the passivation layer comprises:

forming a first passivation layer over the substrate; and

forming a second passivation layer over the first passivation layer,

wherein the first passivation layer and the second passivation layer are made of different materials.

2. The method according to claim 1 , wherein at least one of the dianhydride and the diamine comprises a tricycloalkane or tricycloalkene.

3. The method according to claim 1 , wherein at least one of the dianhydride and the diamine comprises two or more cyclic groups.

4. The method according to claim 3 , wherein the two or more cyclic groups are linked to each other by a linking group selected from the group consisting of —CH 2 —, —CH═CH—, —C≡C—, —O—, —C(O)O—, —CF 3 CH 2 CF 3 —, —CH 3 CH 2 CH 3 —, —SH—, and —SO 2 —.

5. The method according to claim 1 , wherein at least one of the dianhydride and the diamine comprises a cycloalkane selected from the group consisting of cyclopropane, cyclobutane, cyclopentane, cyclohexane, cycloheptane, and cyclooctane.

6. The method according to claim 1 , wherein at least one of the dianhydride and the diamine comprises a fused ring selected from the group consisting of naphthalene, anthracene, phenanthrene, chrysene, pyrene, corannulene, coronene, hexahelicene, indole, isoindole, indolizine, quinoline, isoquinoline, purine, carbazole, dibenzofuran, xanthene, phenazine, phenoxazine, and phenoxathiin.

7. The method according to claim 1 , wherein the forming the polyimide layer comprises:

forming a first polyimide layer including a first polyimide over the passivation layer; and

forming a second polyimide layer including a second polyimide,

wherein each of the first polyimide and the second polyimide are a reaction product of a dianhydride and a diamine,

wherein at least one of the dianhydride and the diamine comprises one selected from the group consisting of a cycloalkane, a fused ring, a bicycloalkane, a tricycloalkane, a bicycloalkene, a tricycloalkene, a spiroalkane, and a heterocyclic ring, and

the first polyimide and the second polyimide are different.

8. A method of manufacturing a bump structure, comprising:

forming a passivation layer over a substrate;

forming a metal pad structure over the substrate, wherein the passivation layer surrounds the metal pad structure;

forming a polyimide layer comprising a polyimide over the passivation layer and the metal pad structure; and

forming a metal bump over the metal pad structure and the polyimide layer,

wherein the metal bump is in electrical contact with the metal pad structure, and

the polyimide layer is adhered to the passivation layer and the metal pad structure by an adhesion promotor, wherein the adhesion promotor is chemically bonded to the polyimide, the passivation layer, and the metal pad structure; and

wherein the forming the polyimide layer comprises:

combining a polyamic acid, an adhesion promotor, and a first solvent to form a polyamic acid composition;

applying the polyamic acid composition to the passivation layer and metal pad structure; and

heating the polyamic acid composition to a temperature ranging from 150° C. to 350° C. to convert the polyamic acid to the polyimide.

9. The method according to claim 8 , wherein the polyamic acid is a reaction product of a dianhydride and a diamine, wherein at least one of the dianhydride and the diamine comprises one selected from the group consisting of a cycloalkane, a fused ring, a bicycloalkane, a tricycloalkane, a bicycloalkene, a tricycloalkene, a spiroalkane, and a heterocyclic ring.

10. The method according to claim 8 , wherein the adhesion promotor comprises a chelating group, a silanol group, and a cross linker group.

11. The method according to claim 10 , wherein the chelating group comprises at least one of N, O, S, or a halogen.

12. The method according to claim 10 , wherein the chelating group includes at least one of a thiol, a thiirane, a thiirene, a thietane, a thiolane, a thiophene, a thiane, a thiopyran, a thiepane, a thiepine, a 2,3-dihydrothiophene, a 2,5-dihydrothiophene, a hydroxy, a carboxyl, an oxirane, an oxirene, an oxetane, an oxolane, a furan, an oxane, a pyran, an oxepane, an oxepine, a 2,5-dihydrofuran, a 2,3-dihydrofuran, an amine, an aziridine, an azetidine, an azete, a pyrrolidine, a pyrrole, a piperidine, a pyridine, an azepane, an azepine, a 1-pyrroline, a 2-pyrroline, a 3-pyrroline, a dihydropyridine, a cyano group, a fluoro group, a chloro group, a bromo group, or an iodo group.

13. The method according to claim 1 , wherein the first passivation layer is an oxide or layer or a nitride layer.

14. The method according to claim 1 , wherein the second passivation layer is an oxide layer or a nitride layer.

15. A bump structure, comprising:

a passivation layer surrounding a metal pad;

a polyimide layer including a polyimide disposed over the passivation layer and the metal pad; and

a metal bump disposed over the metal pad and the polyimide layer,

wherein the metal bump is in electrical contact with the metal pad, and

the polyimide is a reaction product of a dianhydride and a diamine, wherein at least one of the dianhydride and the diamine comprises one selected from the group consisting of a cycloalkane, a fused ring, a bicycloalkane, a tricycloalkane, a bicycloalkene, a tricycloalkene, a spiroalkane, and a heterocyclic ring,

wherein at least one of the dianhydride or the diamine comprises two or more cyclic groups, and

the two or more cyclic groups are linked to each other by a linking group selected from the group consisting of —CH═CH—, —C≡C—, —O—, —C(O)O—, —CF 3 CH 2 CF 3 —, —CH 3 CH 2 CH 3 —, —SH—, and —SO 2 —.

16. The bump structure of claim 15 , wherein at least one of the dianhydride and the diamine comprises a tricycloalkane or tricycloalkene.

17. The bump structure of claim 15 , wherein at least one of the dianhydride and the diamine comprises a cycloalkane selected from the group consisting of cyclopropane, cyclobutane, cyclopentane, cyclohexane, cycloheptane, and cyclooctane.

18. The bump structure of claim 15 , wherein at least one of the dianhydride and the diamine comprises a fused ring selected from the group consisting of naphthalene, anthracene, phenanthrene, chrysene, pyrene, corannulene, coronene, hexahelicene, indole, isoindole, indolizine, quinoline, isoquinoline, purine, carbazole, dibenzofuran, xanthene, phenazine, phenoxazine, and phenoxathiin.

19. The bump structure of claim 15 , wherein the passivation layer comprises:

a first passivation layer disposed over the substrate; and

a second passivation layer disposed over the first passivation layer,

wherein the first passivation layer and the second passivation layer are made of different materials.

20. The bump structure of claim 19 , wherein the first passivation layer and second passivation layers are an oxide layer or a nitride layer.