RF impedance matching network
In one embodiment, an impedance matching network includes an electronically variable reactance element (EVRE) comprising discrete reactance elements and corresponding switches. The switches are configured to switch in and out the discrete reactance elements to alter a total reactance provided by the EVRE. A monitoring circuit is operably coupled to the EVRE. For each discrete reactance element, the monitoring circuit monitors a value related to the discrete reactance element or its corresponding switch. Upon determining the monitored value exceeds a predetermined amount, the monitoring circuit the discrete reactance element of the EVRE from switching in or out.
1. An impedance matching network comprising:
a radio frequency (RF) input configured to operably couple to an RF source;
an RF output configured to operably couple to a plasma chamber;
an electronically variable reactance element (EVRE) comprising discrete reactance elements and corresponding switches, the switches configured to switch in and out the discrete reactance elements to alter a total reactance provided by the EVRE; and
a monitoring circuit operably coupled to the EVRE, the monitoring circuit configured to, for each discrete reactance element, carry out the steps of:
monitoring a value related to the discrete reactance element or its corresponding switch; and
upon determining the monitored value exceeds a predetermined amount, preventing the discrete reactance element of the EVRE from switching in or out.
2. The impedance matching network of claim 1 , wherein the monitored value is a current passing between terminals of the switch.
3. The impedance matching network of claim 1 , wherein the monitored value is a voltage at a terminal of the switch.
4. The impedance matching network of claim 1 , wherein each switch comprises a passive switch coupled to a first switch terminal and a driving switch coupled in series with the passive switch and a second switch terminal, the driving switch configured to turn the passive switch on and off.
5. The impedance matching network of claim 1 , further comprising a second EVRE.
6. The impedance matching network of claim 1 , further comprising a second EVRE having discrete reactance elements, the monitoring circuit configured to, for each discrete reactance element of the second EVRE, carry out the steps of:
monitoring a value related to the discrete reactance element; and
upon determining the monitored value exceeds a predetermined amount, preventing discrete the reactance element of the second EVRE from switching in or out.
7. The impedance matching network of claim 1 , wherein, for each discrete reactance element, the steps of the monitoring circuit further comprise:
upon determining the monitored value no longer exceeds the predetermined amount, allowing the discrete reactance element to switch in and out.
8. A semiconductor processing tool comprising:
a plasma chamber configured to deposit a material onto a substrate or etch a material from the substrate; and
an impedance matching network operably coupled to the plasma chamber, the matching network comprising:
a radio frequency (RF) input configured to operably couple to an RF source;
an RF output configured to operably couple to the plasma chamber;
an electronically variable reactance element (EVRE) comprising discrete reactance elements and corresponding switches, the switches configured to switch in and out the discrete reactance elements to alter a total reactance provided by the EVRE; and
a monitoring circuit operably coupled to the EVRE, the monitoring circuit configured to, for each discrete reactance element, carry out the steps of:
monitoring a value related to the discrete reactance element or its corresponding switch; and
upon determining the monitored value exceeds a predetermined amount, preventing the discrete reactance element of the EVRE from switching in or out.
9. A method of matching an impedance comprising:
a) operably coupling a radio frequency (RF) input of a matching network to an RF source;
b) operably coupling an RF output of the matching network to a plasma chamber, the matching network comprising an electronically variable reactance element (EVRE) comprising discrete reactance elements and corresponding switches, the switches configured to switch in and out the discrete reactance elements to alter a total reactance provided by the EVRE; and
c) for each discrete reactance element:
i) monitoring, by a monitoring circuit, a value related to the discrete reactance element or its corresponding switch; and
ii) upon the monitoring circuit determining the monitored value exceeds a predetermined amount, preventing the discrete reactance element of the EVRE from switching in or out.
10. The method of claim 9 , wherein the monitored value is a current passing between terminals of the switch.
11. The method of claim 9 , wherein the monitored value is a voltage at a terminal of the switch.
12. The method of claim 9 , wherein each switch comprises a passive switch coupled to a first switch terminal and a driving switch coupled in series with the passive switch and a second switch terminal, the driving switch configured to turn the passive switch on and off.
13. The method of claim 9 , wherein the matching network further comprises a second EVRE.
14. The method of claim 9 , wherein the matching network further comprises a second EVRE having discrete reactance elements, the monitoring circuit configured to, for each discrete reactance element of the second EVRE, carry out the steps of:
monitoring a value related to the discrete reactance element; and
upon determining the monitored value exceeds a predetermined amount, preventing discrete the reactance element of the second EVRE from switching in or out.
15. The method of claim 9 , further comprising, for each discrete reactance element:
upon determining the monitored value no longer exceeds the predetermined amount, allowing the discrete reactance element to switch in and out.
16. A method of manufacturing a semiconductor, the method comprising:
a) placing a substrate in a plasma chamber configured to deposit a material layer onto the substrate or etch a material layer from the substrate;
b) operably coupling a radio frequency (RF) input of a matching network to an RF source;
c) operably coupling an RF output of the matching network to the plasma chamber, the matching network comprising an electronically variable reactance element (EVRE) comprising discrete reactance elements and corresponding switches, the switches configured to switch in and out the discrete reactance elements to alter a total reactance provided by the EVRE; and
d) for each discrete reactance element:
i) monitoring, by a monitoring circuit, a value related to the discrete reactance element or its corresponding switch; and
ii) upon the monitoring circuit determining the monitored value exceeds a predetermined amount, preventing the discrete reactance element of the EVRE from switching in or out.