Polymer layer in semiconductor device and method of manufacture
A method of manufacturing a semiconductor device includes applying a polymer mixture over a substrate, exposing and developing at least a portion of the polymer mixture to form a developed dielectric, and curing the developed dielectric to form a dielectric layer. The polymer mixture includes a polymer precursor, a photosensitizer, and a solvent. The polymer precursor may be a polyamic acid ester.
1. A method of manufacturing a semiconductor device, the method comprising:
placing a polymer material over a substrate, the polymer material comprising:
a polymer precursor, the polymer precursor comprising the following structure
wherein n outside the brackets represents a number of the repeating unit of the structure, and wherein R represents
a photosensitizer; and
a solvent;
patterning the polymer material; and
curing the polymer material at a temperature in a range of 200° C. to 300° C.
2. The method of claim 1 , wherein the polymer material comprises the polymer precursor in a range of 20% to 40% by weight.
3. The method of claim 1 , wherein the polymer material comprises the photosensitizer in a range of 1% to 8% by weight.
4. The method of claim 3 , wherein the photosensitizer comprises a dibenzoylmethane.
5. The method of claim 3 , wherein the photosensitizer comprises 2,2′-(Phenylimino)diethanol.
6. The method of claim 1 , wherein the polymer material further comprises a cross-linker in a range of 1% to 5% by weight.
7. The method of claim 6 , wherein the cross-linker comprises tetraethylene glycol dimethacrylate.
8. The method of claim 1 , wherein the solvent comprises 1-Methyl-2-pyrrolidone (NMP), the polymer material comprising NMP in a range of 45% to 55% by weight.
9. The method of claim 8 , wherein the solvent comprises ethyl lactate (EL), the polymer material comprising EL in a range of 10% to 15% by weight.
10. A method of manufacturing a semiconductor device, the method comprising:
forming a polymer precursor, the forming of the polymer precursor comprising:
reacting 3,3,4,4-biphenyltetracarboxylic dianhydride with a first reactant to form a second reactant; and
reacting the second reactant with 4,4-(4,4-isopropylidenediphenyl-1,1-diyldioxy)dianiline (BAPP) to form the polymer precursor;
forming a polymer mixture, the polymer mixture comprising the polymer precursor and a solvent;
applying the polymer mixture over a substrate;
exposing and developing at least a portion of the polymer mixture to form a developed dielectric;
curing the developed dielectric to form a dielectric layer; and
forming a conductive feature over the dielectric layer.
11. The method of claim 10 , wherein the polymer mixture further comprises a cross-linker.
12. The method of claim 11 , wherein during the exposing and developing at least the portion of the polymer mixture, the cross-linker reacts with the polymer precursor to form a cross-linked polymer chain.
13. The method of claim 12 , wherein the curing the dielectric layer comprises a thermal cure, the thermal cure converting the cross-linked polymer chain to a polyimide with the following structure
wherein n outside the brackets represents a number of the repeating unit of the structure.
14. The method of claim 10 , wherein the dielectric layer has a dissipation factor in a range of 0.007 to 0.01 at about 60 GHz.
15. The method of claim 10 , wherein the dielectric layer has a Young's modulus in a range of 3.7 GPa to 3.8 GPa.
16. The method of claim 10 , wherein the dielectric layer has a dielectric constant of about 2.9.
17. The method of claim 10 , wherein the dielectric layer has a tensile strength in a range of 157 MPa to 181 MPa.
18. A method of manufacturing a semiconductor device, the method comprising:
forming a first encapsulant on a first dielectric layer, the first encapsulant encapsulating a first through via; and
forming a first redistribution structure over the first encapsulant and the first through via, the forming of the first redistribution structure comprising:
forming a second dielectric layer, the second dielectric layer having a dissipation factor in a range of 0.007 to 0.01 at 60 GHz and having a Young's modulus in a range of 3.7 GPa to 3.8 GPa; and
forming a first metallization pattern on the second dielectric layer, the first metallization pattern physically and electrically coupling the first through via.
19. The method of claim 18 further comprising:
bonding a die on the first redistribution structure;
forming a second through via on the first redistribution structure;
forming a second encapsulant on the first redistribution structure, the second encapsulant encapsulating the die and the second through via; and
forming a second redistribution structure over the second encapsulant, the die, and the second through via, the forming of the second redistribution structure comprising:
forming a third dielectric layer; and
forming a second metallization pattern on the third dielectric layer, the second metallization pattern physically and electrically coupling the die and the second through via.
20. The method of claim 18 , wherein the second dielectric layer comprises the following structure
wherein n outside the brackets represents a number of the repeating unit of the structure.