Apparatus and methods for beam processing of substrates
A substrate processing system including a processing chamber, a substrate holder configured to hold and rotate a substrate about an axis perpendicular to a working surface of the substrate; an electron emitter adapted to emit a first electron beam directed at a first surface of a peripheral region of the substrate, the first electron beam having a first beam energy and a first beam current sufficient to vaporize material from the first surface of the peripheral region of the substrate; an airflow system configured to direct a flow of gas across the working surface of the substrate; and an exhaust system configured to collect the gas comprising the material vaporized from the peripheral region.
1. A method for processing a substrate, the method comprising:
receiving the substrate in a substrate holder of a processing chamber;
rotating the substrate about an axis perpendicular to a working surface of the substrate;
turning on an airflow system to direct a flow of gas across the working surface of the substrate; and
exposing a peripheral region of the substrate to a first electron beam to vaporize material from the peripheral region of the substrate, the first electron beam being a pulsed beam of electrons, the first electron beam passing through a metallic foil before vaporizing the material from the peripheral region.
2. The method of claim 1 , wherein the flow of gas having a flow rate sufficient to prevent deposition of the vaporized material on the working surface of the substrate.
3. The method of claim 1 , wherein the first electron beam having a first beam energy between 2 KeV and 20 KeV, and a first beam current between 1 mA and 30 mA.
4. The method of claim 1 , further comprising exposing the peripheral region of the substrate to a second electron beam to vaporize the material from the peripheral region of the substrate, wherein the second electron beam has a second beam energy between 50 KeV and 100 KeV, and a second beam current between 1 mA and 30 mA.
5. The method of claim 1 , wherein the flow of gas is directed substantially across an entirety of the working surface of the substrate.
6. The method of claim 1 , wherein the substrate is rotated between 500 RPM and 3000 RPM.
7. A method for processing a substrate, the method comprising:
receiving the substrate;
flowing gas across a working surface of the substrate, the gas flowing at a specified flow rate;
while rotating the substrate about an axis perpendicular to the working surface of the substrate, vaporizing a portion of a material in a peripheral region of the substrate by exposing the peripheral region to an electron beam from an electron emitter, the electron beam passing through a metallic foil before contacting the peripheral region; and
determining that a stop threshold is met, and based thereon, turning off the electron emitter.
8. The method of claim 7 , wherein the stop threshold is based on a number of rotations of the substrate.
9. The method of claim 7 , wherein the stop threshold is based on metrology data.
10. The method of claim 7 , wherein the specified flow rate is based on a flow rate sufficient to prevent deposition of vaporized material on the working surface of the substrate.
11. A method for processing a substrate, the method comprising:
placing the substrate in a substrate holder, the substrate holder configured to rotate the substrate about an axis perpendicular to a working surface of the substrate;
aligning an electron emitter with a peripheral region of the substrate;
starting a rotation of the substrate with the substrate holder;
turning on an airflow system, an exhaust system, and the electron emitter, wherein the activated electron emitter vaporizes material from a first surface of the peripheral region of the substrate with a first electron beam, the first electron beam being passed through a metallic foil;
making adjustments to beam parameters of the first electron beam based on a presence of vaporized material from the first surface of the peripheral region, the vaporized material being entrained in a gas from the airflow system; and
when a stop threshold is met, turning off the airflow system, the exhaust system, and the electron emitter.
12. The method of claim 11 , wherein the airflow system is configured to direct a flow of gas across the working surface of the substrate.
13. The method of claim 11 , wherein the exhaust system is configured to collect gas comprising the material vaporized from the peripheral region.
14. The method of claim 11 , wherein the first electron beam has a first beam energy between 2 KeV and 20 KeV and a first beam current between 1 mA and 30 mA.
15. The method of claim 11 , wherein the activated electron emitter produces a second electron beam directed at the first surface of the peripheral region of the substrate, the second electron beam having a second beam energy and a second beam current sufficient to vaporize the material from a second surface of the peripheral region of the substrate, the second surface opposite the first surface.
16. The method of claim 15 , wherein the second beam energy is between 50 KeV and 100 KeV and the second beam current is between 1 mA and 30 mA.
17. The method of claim 11 , wherein the substrate holder rotates the substrate at a rotation rate between 500 RPM and 3000 RPM.
18. The method of claim 11 , wherein the electron emitter emits the first electron beam for a duration corresponding to between 2 revolutions and 50 revolutions of the substrate.
19. The method of claim 11 , further comprising adjusting a parameter of the first electron beam in accordance with metrology data associated with the substrate.
20. The method of claim 19 , wherein the metrology data comprises images of a remaining amount of the material in the peripheral region of the substrate.