Semiconductor device and manufacturing method thereof
In a method for manufacturing a semiconductor device by using a gate replacement technology, a gate space constituted by dielectric material portions, in which a semiconductor fin channel layer is exposed, is formed. The surfaces of the dielectric material portions are made hydrophobic. A first dielectric layer is formed on the semiconductor fin channel layer, while maintaining the surfaces of the dielectric material portions hydrophobic. A surface of the formed first dielectric layer is hydrophilic. A first conductive layer is formed over the first dielectric layer, while maintaining the surfaces of the dielectric material portions hydrophobic. A second conductive layer is formed over the first conductive layer and on the hydrophobic surfaces of the dielectric material portions, thereby filling the gate space.
1. A semiconductor device comprising:
a fin extending in a first direction;
a gate structure including a gate dielectric layer disposed over the fin structure and a gate electrode disposed over the gate dielectric layer, and extending in a second direction crossing the first direction; and
sidewall insulating layers disposed on opposing sidewalls of the gate structure,
wherein the sidewall insulating layers include a hydrophobic portion and a hydrophilic portion facing the gate electrode structure, and the gate electrode is in direct contact with the hydrophilic portion and the gate dielectric layer is in direct contact with the hydrophobic portion.
2. The semiconductor device of claim 1 , wherein:
the gate electrode includes one or more underlying layers and a main metal electrode layer, and
the main metal electrode layer is in contact with the sidewall insulating layers without interposing the one or more underlying layers and the gate dielectric layer.
3. The semiconductor device of claim 2 , wherein none of the one or more underlying layers have a U-shape cross section having end portions thicker than a center portion along the first direction.
4. The semiconductor device of claim 2 , wherein the one or more underlying layers have a substantially uniform thickness above the fin.
5. The semiconductor device of claim 2 , wherein:
the main metal electrode material layer includes at least one layer of W, Co, Ni, Al and Cu, and
the one or more underlying layers include at least one layer of Ti, TiN, TaN and TiSiN.
6. The semiconductor device of claim 1 , wherein:
the gate dielectric layer includes an interfacial layer disposed on the fin and a high-k dielectric layer disposed on the interfacial layer.
7. The semiconductor device of claim 6 , wherein the high-k dielectric layer includes at least one layer of HfO 2 , ZrO 2 , Al 2 O 3 , La 2 O 3 .
8. A semiconductor device comprising:
a fin extending in a first direction;
a gate structure including a gate dielectric layer disposed over the fin structure and a gate electrode disposed over the gate dielectric layer, and extending in a second direction crossing the first direction; and
sidewall insulating layers disposed on opposing sidewalls of the gate structure,
wherein a surface of the sidewall insulating spacers facing the gate electrode structure includes: a first portion with a residue of a self-assembled monolayer at an interface of the gate electrode and sidewall insulating layers, and a second portion without the residue of the self-assembled monolayer at an interface of the gate electrode and the sidewall insulating layers, and
the gate electrode is in direct contact with the first portion and the gate dielectric layer is in direct contact with the second portion.
9. The semiconductor device of claim 8 , wherein:
the gate electrode includes one or more underlying layers and a main metal electrode layer, and
the main metal electrode layer is in contact with the sidewall insulating layers without interposing the one or more underlying layers and the gate dielectric layer.
10. The semiconductor device of claim 9 , wherein none of the one or more underlying layers have a U-shape cross section having end portions thicker than a center portion along the first direction.
11. The semiconductor device of claim 9 , wherein the one or more underlying layers have a substantially uniform thickness above the fin.
12. The semiconductor device of claim 9 , wherein:
the main metal electrode material layer includes at least one layer of W, Co, Ni, Al and Cu, and
the one or more underlying layers include at least one layer of Ti, TiN, TaN and TiSiN.
13. The semiconductor device of claim 8 , wherein:
the gate dielectric layer includes an interfacial layer disposed on the fin and a high-k dielectric layer disposed on the interfacial layer.
14. The semiconductor device of claim 13 , wherein the high-k dielectric layer includes at least one layer of HfO 2 , ZrO 2 , Al 2 O 3 , La 2 O 3 .
15. A semiconductor device, comprising:
a first transistor including a first fin extending in a first direction and a first gate structure, the first gate structure including a first gate dielectric layer disposed over the first fin and a first gate electrode disposed over the first gate dielectric layer and extending in a second direction crossing the first direction; and
a second transistor including a second fin extending in the first direction and a second gate structure, the second gate structure including a second gate dielectric layer disposed over the second fin structure and a second gate electrode disposed over the second gate dielectric layer and extending in the second direction, wherein:
the first gate structure and the second gate structure are aligned along the second direction,
the first gate structure and the second gate structure are separated by a separation plug made of an insulating material,
the first gate electrode is in direct contact with a side wall of the separation plug, and
a residue of a self-assembled monolayer is disposed at an interface between the first gate electrode and the side wall of the separation plug.
16. The semiconductor device of claim 15 , wherein:
the first gate structure includes one or more underlying layers and a main metal electrode layer, and
the main metal electrode layer is in contact with the side wall of the separation plug and none of the one or more underlying layers are in contact with the side wall of the separation plug.
17. The semiconductor device of claim 15 , further comprising an isolation insulating layer in which bottoms of the first and second fins are embedded,
wherein, between the first fin and the separation plug, the first gate structure is in direct contact with a surface of the isolation insulating layer.
18. The semiconductor device of claim 15 , wherein the first gate dielectric layer and the second gate dielectric layer are not disposed on side walls of the separation plug.
19. The semiconductor device of claim 15 , wherein:
the first gate dielectric layer includes an interfacial layer disposed on the first fin structure and a high-k dielectric layer disposed on the interfacial layer, and
the high-k dielectric layer is not disposed on the side wall of the separation plug.
20. The semiconductor device of claim 15 , wherein the separation plug is made of a silicon nitride based material.