Quantum dot light-emitting diode and preparation method therefor, and light-emitting module and display apparatus
A preparation method of the QD light-emitting diode includes: prepare a QD light-emitting layer on an anode, wherein the QD light-emitting layer is prepared by the QDs and the CuSCN nanoparticles; and prepare a cathode on the QD light-emitting layer, and form the QD light-emitting diode.
1. A preparation method of a QD light-emitting diode, comprising:
preparing a QD light-emitting layer on an anode, wherein the QD light-emitting layer is prepared by QDs and CuSCN nanoparticles; and
preparing a cathode on the QD light-emitting layer, and forming the QD light-emitting diode,
wherein preparing the QD light-emitting layer on the anode comprises:
depositing a mixture of the QDs and the CuSCN nanoparticles on the anode by a solution method, to form a QD light-emitting layer containing the CuSCN nanoparticles; or
blending the QDs and the CuSCN nanoparticles, before depositing on the anode through evaporation method, and forming a QD light-emitting layer containing the CuSCN nanoparticles.
2. The preparation method of the QD light-emitting diode according to claim 1 , wherein comprising specifically:
prepare a holes injection layer on the anode;
prepare a holes transport layer on the holes injection layer;
prepare a QD light-emitting layer on the holes transport layer; wherein the QD light-emitting layer is prepared by the QDs and the CuSCN nanoparticles;
prepare an electrons transport layer on the QD light-emitting layer, and prepare a cathode on the electrons transport layer before forming a QD light-emitting diode.
3. The preparation method of the QD light-emitting diode according to claim 2 , wherein preparing a QD light-emitting layer on the holes transport layer includes specifically:
depositing a mixture of the QDs and the CuSCN nanoparticles on the holes transport layer by a solution method, to form a QD light-emitting layer containing the CuSCN nanoparticles.
4. The preparation method of the QD light-emitting diode according to claim 2 , wherein preparing a QD light-emitting layer on the holes transport layer includes specifically:
blending the QDs and the CuSCN nanoparticles, before depositing on the holes transport layer through the evaporation method, to form a QD light-emitting layer containing the CuSCN nanoparticles.
5. The preparation method of the QD light-emitting diode according to claim 1 , wherein in the mixture, a concentration of the QDs is 1-50 mg/mL, and a concentration of the CuSCN nanoparticles is 0.001-50 mg/mL.
6. The preparation method of the QD light-emitting diode according to claim 5 , wherein in the mixture, the concentration of the QDs is 10-20 mg/mL, and the concentration of the CuSCN nanoparticles is 0.01-10 mg/mL.
7. The preparation method of the QD light-emitting diode according to claim 1 , wherein a mass ratio between the QDs and the CuSCN nanoparticles is 0.00120:1.
8. The preparation method of the QD light-emitting diode according to claim 3 , wherein in the mixture, a concentration of the QDs is 1-50 mg/mL, and a concentration of the CuSCN nanoparticles is 0.001-50 mg/mL.
9. The preparation method of the QD light-emitting diode according to claim 4 , wherein a mass ratio between the QDs and the CuSCN nanoparticles is 0.00120:1.