Substrate processing method and plasma processing apparatus
A method for processing a substrate for processing a substrate includes: (a) providing a substrate having an etching region and a patterned region on the etching region; (b) forming an organic film on a surface of the substrate; and (c) etching the etching region using plasma generated from a processing gas through the patterned region. The step (b) includes (b1) supplying a first gas containing an organic compound to the substrate to form a precursor layer on the substrate, and (b2) supplying a second gas containing a modifying gas to the substrate and supplying energy to the precursor layer and/or the second gas to modify the precursor layer.
1. A method for processing a substrate comprising:
(a) providing a substrate having an etching region and a patterned region on the etching region;
(b) forming an organic film on a surface of the substrate; and
(c) etching the etching region using plasma generated from a processing gas through the patterned region,
wherein (b) includes:
(b1) supplying a first gas containing an organic compound to the substrate to form a precursor layer on the substrate; and
(b2) supplying a second gas containing a modifying gas to the substrate and supplying energy to the precursor layer and/or the second gas such that the precursor layer is modified to form the organic film, and
wherein in (b2), the precursor layer is modified by plasma generated from the second gas.
2. The method for processing a substrate according to claim 1 , wherein (b1) and (b2) are alternately repeated.
3. The method for processing a substrate according to claim 1 , further comprising:
(d) etching the organic film on the etching region such that the organic film is left in a portion along a side surface of the patterned region, before (c).
4. The method for processing a substrate according to claim 1 , further comprising:
(e) forming a recess by partially etching an etching region of the substrate through the patterned region using plasma generated from a processing gas before (b),
wherein in (b), the organic film is formed at least on a side surface of the recess, and in (c), a bottom of the recess in the etching region is etched.
5. The method for processing a substrate according to claim 4 , wherein in (b1), the precursor layer is formed on a portion of a surface of the recess and/or in (b2), the precursor layer is modified on a portion of the surface of the recess.
6. The method for processing a substrate according to claim 5 , wherein the organic film has a different thickness along a thickness direction of the substrate.
7. The method for processing a substrate according to claim 1 , further comprising:
(f) trimming the organic film after (b),
wherein the etching region is surrounded by a side surface of the patterned region, and
in (b), the organic film is formed on the side surface to have a different thickness along a thickness direction of the substrate.
8. The method for processing a substrate according to claim 7 , further comprising:
(g) forming a conformal organic film on the entire side surface before (b).
9. The method for processing a substrate according to claim 1 , wherein the first gas contains at least one organic compound selected from a group consisting of epoxides, carboxylic acids, carboxylic acid halides, carboxylic acid anhydrides, isocyanates, and phenols.
10. The method for processing a substrate according to claim 1 , wherein when the first gas contains at least one organic compound selected from the group consisting of carboxylic acids, carboxylic acid halides, and isocyanates, the second gas contains at least one modifying gas selected from the group consisting of an inorganic compound gas having an NH bond, an inert gas, a mixed gas of N 2 and H 2 , H 2 O gas, and a mixed gas of H 2 and O 2 .
11. The method for processing a substrate according to claim 1 , wherein when the first gas contains at least one organic compound selected from a group consisting of epoxides, carboxylic acid anhydrides, and phenols, the second gas contains at least one modifying gas selected from a group consisting of an inorganic compound gas having an NH bond, an inert gas, and a mixed gas of N 2 and H 2 .
12. The method for processing a substrate according to claim 11 , wherein the inorganic compound gas having an NH bond is at least one selected from a group consisting of N 2 H 2 , N 2 H 4 , and NH 3 .
13. The method for processing a substrate according to claim 1 , wherein the etching region includes a silicon-containing film.
14. The method for processing a substrate according to claim 1 , wherein the forming of the organic film and the etching are performed in a same processing chamber (in-situ) or a same system (in-system) while maintaining a reduced pressure atmosphere.
15. The method for processing a substrate according to claim 1 , wherein in (b2), a thickness of the etching region of the substrate remains substantially the same.
16. A method for processing a substrate comprising:
(a) providing a substrate having an etching region and a patterned region on the etching region;
(b) forming an organic film on a surface of the substrate; and
(c) etching the etching region using plasma generated from a processing gas through the patterned region,
wherein (b) includes:
(b1) supplying a first gas containing an organic compound to the substrate to form a precursor layer on the substrate; and
(b2) supplying a second gas containing a modifying gas to the substrate and supplying energy to the precursor layer and/or the second gas such that the precursor layer is modified to form the organic film, and
wherein the second gas contains at least one modifying gas selected from a group consisting of an inorganic compound gas having an NH bond, an inert gas, a mixed gas of N 2 and H 2 , H 2 O gas, and a mixed gas of H 2 and O 2 .