Atomic layer etch and deposition processing systems including a lens circuit with a tele-centric lens, an optical beam folding assembly, or a polygon scanner

1. A substrate processing system comprising:

a processing chamber;

a substrate support disposed in the processing chamber and configured to support a substrate;

a laser configured to generate a laser beam;

a collimating assembly comprising a plurality of lenses or mirrors arranged to direct the laser beam at the substrate to heat an exposed material of the substrate, wherein the plurality of lenses or mirrors are configured to direct the laser beam in a direction within a predetermined range of being perpendicular to a surface of the substrate; and

a controller configured to perform a rapid thermal annealing process including (i) generating a control signal to modulate the laser beam to subiect the exposed material to a plurality of thermal energy pulses, and (ii) allowing the exposed material to cool between consecutive ones of the plurality of thermal enemy pulses.

2. The substrate processing system of claim 1 , further comprising a lens circuit comprising:

flat-top optics to convert the laser beam from a round-shaped laser beam to a flat-top shaped laser beam; and

diffractive optics to convert the flat-top shaped laser beam to a square-shaped laser beam.

3. The substrate processing system of claim 1 , further comprising a mirror circuit comprising a first mirror, a second mirror, a first motor and a second motor,

wherein the controller is configured to move the first mirror and the second mirror via the first motor and the second motor to adjust a position of the laser beam on the substrate.

4. The substrate processing system of claim 1 , further comprising a beam size adjustment device configured to adjust a size of the laser beam prior to being received by the substrate.

5. The substrate processing system of claim 1 , wherein:

the collimating assembly comprises a tele-centric lens assembly comprising the plurality of lenses arranged to direct the laser beam at the substrate to heat the exposed material; and

the plurality of lenses are configured to direct the laser beam in a direction perpendicular to the surface of the substrate.

6. The substrate processing system of claim 5 , further comprising a mirror circuit comprising a first mirror, a second mirror, a first motor and a second motor, wherein:

the laser beam is directed at the first mirror;

the laser beam is directed from the first mirror to the second mirror;

the laser beam is directed from the second mirror through the tele-centric lens assembly and to the substrate; and

the controller is configured to move the first mirror and the second mirror via the first motor and the second motor to adjust a position of the laser beam on the substrate.

7. The substrate processing system of claim 6 , wherein the plurality of lenses maintain the laser beam in a perpendicular relationship with the surface of the substrate while the controller adjusts the position of the laser beam on the substrate.

8. The substrate processing system of claim 5 , wherein:

the processing chamber is an inductively coupled plasma chamber or a remote plasma source connected chamber; and

the tele-centric lens assembly is disposed above a dielectric window of the processing chamber.

9. The substrate processing system of claim 5 , wherein the plurality of lenses are plano-convex lenses.

10. The substrate processing system of claim 5 , wherein the plurality of lenses have different diameters.

11. The substrate processing system of claim 10 , wherein:

the plurality of lenses are arranged in a series including a first lens and a last lens;

the plurality of lenses increase in diameter from the first lens to the last lens; and

the laser beam is received at the first lens and is output from the last lens to the substrate.

12. The substrate processing system of claim 1 , wherein:

the collimating assembly comprises an optical beam folding assembly comprising the plurality of mirrors arranged to direct the laser beam at the substrate to heat the exposed material, wherein the plurality of lenses are configured to direct the laser beam in a direction perpendicular to the surface of the substrate; and

the plurality of mirrors are arranged to reflect and direct the laser beam in a direction within the predetermined range of being perpendicular to the surface of the substrate.

13. The substrate processing system of claim 1 , wherein the controller is configured to control the laser to pulse the laser beam at a predetermined frequency.

14. The substrate processing system of claim 1 , further comprising a gas delivery system configured to supply a process gas to the processing chamber,

wherein the controller is configured to control the gas delivery system and the laser to iteratively perform an isotropic atomic layer etch process including

during an iteration of the isotropic atomic layer etch process, performing pretreatment, atomistic adsorption, and pulsed thermal annealing,

during the atomistic adsorption, exposing the surface of the substrate to the process gas including a halogen species that is selectively adsorbed onto the exposed material of the substrate to form a modified material, and

during the pulsed thermal annealing, pulsing the laser on and off a plurality of times within a predetermined period to expose and remove the modified material.

15. The substrate processing system of claim 1 , further comprising an acousto-optic modulator configured to receive the laser beam, wherein:

the controller is configured to generate a radio frequency signal;

the laser is configured to operate in a continuous mode; and

the acousto-optic modulator is configured to, based on the radio frequency signal and at a predetermined frequency, switch between permitting passage and preventing passage of the laser beam to the plurality of lenses or mirrors.

16. The substrate processing system of claim 15 , wherein:

the collimating assembly comprises an optical beam folding assembly comprising the plurality of mirrors arranged to direct the laser beam at the substrate to heat the exposed material, wherein the plurality of lenses are configured to direct the laser beam in a direction perpendicular to the surface of the substrate; and

the plurality of mirrors are arranged to reflect and direct the laser beam in a direction within the predetermined range of being perpendicular to the surface of the substrate.

17. The substrate processing system of claim 15 , further comprising a gas delivery system configured to supply a process gas to the processing chamber,

wherein the controller is configured to control the gas delivery system and the laser to iteratively perform an isotropic atomic layer etch process including

during an iteration of the isotropic atomic layer etch process, performing pretreatment, atomistic adsorption, and pulsed thermal annealing,

during the atomistic adsorption, exposing the surface of the substrate to the process gas including a halogen species that is selectively adsorbed onto the exposed material of the substrate to form a modified material, and

during the pulsed thermal annealing, generate the radio frequency signal to modulate the laser beam within a predetermined period to expose and remove the modified material.

18. A substrate processing system comprising:

a processing chamber;

a substrate support disposed in the processing chamber and configured to support a substrate;

a laser configured to generate a laser beam;

at least one of a mirror or a polygon scanner arranged to direct the laser beam at a surface of the substrate to heat an exposed material of the substrate; and

a controller configured to perform an isotropic atomic layer etch process including performing pretreatment, atomistic adsorption and pulsed thermal annealing, wherein the controller is configured

form a modified material during the atomistic adsorption, and

during the pulsed thermal annealing, to at least one of i) pulsing the laser on and off a plurality of times within a predetermined period to expose and remove the modified material, and ii) generating a radio frequency signal to modulate the laser beam within a predetermined period to expose and remove the modified material.

19. The substrate processing system of claim 18 , wherein the at least one of the mirror or the polygon scanner is configured to direct the laser beam in a direction within a predetermined range of being perpendicular to the surface of the substrate.

20. The substrate processing system of claim 18 , further comprising a lens circuit comprising:

flat-top optics configured to convert a round-shaped laser beam to a flat-top shaped laser beam; and

beam shaping optics configured to convert the flat-top shaped laser beam to a line beam.

21. The substrate processing system of claim 18 , wherein:

the polygon scanner includes a plurality of sides; and

each of the plurality of sides is implemented as a mirror or includes a mirror.

22. The substrate processing system of claim 21 , further comprising a motor connected to and configured to rotate the polygon scanner,

wherein the controller is configured to control operation of the motor to rotate the polygon scanner to move the laser beam across the surface of the substrate.

23. The substrate processing system of claim 18 , further comprising a motor connected to and configured to rotate the mirror,

wherein the controller is configured to control operation of the motor to rotate the mirror to move the laser beam across the surface of the substrate.

24. The substrate processing system of claim 18 , further comprising a gas delivery system configured to supply a process gas to the processing chamber,

wherein the controller is configured to control the gas delivery system and the laser to iteratively perform the isotropic atomic layer etch process including

during an iteration of the isotropic atomic layer etch process, performing the pretreatment, the atomistic adsorption, and the pulsed thermal annealing,

during the atomistic adsorption, exposing the surface of the substrate to the process gas including a halogen species that is selectively adsorbed onto the exposed material of the substrate to form the modified material, and

during the pulsed thermal annealing, pulsing the laser on and off the plurality of times within the predetermined period to expose and remove the modified material.

25. The substrate processing system of claim 18 , further comprising an acousto-optic modulator configured to receive the laser beam, wherein:

the controller is configured to generate the radio frequency signal;

the laser is configured to operate in a continuous mode, and the acousto-optic modulator is configured to, based on the radio frequency signal and at a predetermined frequency, switch between permitting passage and preventing passage of the laser beam to the polygon scanner.

26. The substrate processing system of claim 25 , further comprising a gas delivery system configured to supply a process gas to the processing chamber,

wherein the controller is configured to control the gas delivery system and the laser to iteratively perform the isotropic atomic layer etch process including

during an iteration of the isotropic atomic layer etch process, performing the pretreatment, the atomistic adsorption, and the pulsed thermal annealing,

during the atomistic adsorption, exposing the surface of the substrate to the process gas including a halogen species that is selectively adsorbed onto the exposed material of the substrate to form the modified material, and

during the pulsed thermal annealing, generate the radio frequency signal to modulate the laser beam within the predetermined period to expose and remove the modified material.