Germanium tetraflouride and hydrogen mixtures for an ion implantation system
The current disclosure is directed to methods and assemblies configured to deliver a mixture of germanium tetrafluoride (GeF 4 ) and hydrogen (H 2 ) gases to an ion implantation apparatus, so H 2 is present in an amount in the range of 25%-67% (volume) of the gas mixture, or the GeF 4 and H 2 are present in a volume ratio (GeF 4 :H 2 ) in the range of 3:1 to 33:67. The use of the H 2 gas in an amount in mixture or relative to the GeF 4 gas prevents the volatilization of cathode material, thereby improving performance and lifetime of the ion implantation apparatus. Gas mixtures according to the disclosure also result in a significant Ge + current gain and W + peak reduction during an ion implantation procedure.
1. A gas supply assembly for providing a gas mixture comprising germanium tetrafluoride (GeF 4 ) and hydrogen (H 2 ) gases in an ion implantation chamber comprising:
one or more fluid supply package(s) comprising GeF 4 and H 2 wherein the assembly is configured to provide a gas mixture comprising GeF 4 and H 2 an ion implantation chamber, wherein H 2 is present in an amount in the range of 25%-67% (volume) of the gas mixture, or GeF 4 and H 2 are present in a volume ratio (GeF 4 :H 2 ) in the range of 3:1 to 33:67.
2. The gas supply assembly of claim 1 wherein H 2 is present in an amount in the range of 37-67% of the gas mixture, or GeF 4 and H 2 are present in a volume ratio (GeF 4 :H 2 ) in the range of 63:37 to 33:67.
3. The gas supply assembly of claim 1 wherein H 2 is present in an amount in the range of 42-62% of the gas mixture, or GeF 4 and H 2 are present in a volume ratio (GeF 4 :H 2 ) in the range of 29:21 to 19:31.
4. The gas supply assembly of claim 1 wherein H 2 is present in an amount in the range of 45-59% of the gas mixture, or GeF 4 and H 2 are present in a volume ratio (GeF 4 :H 2 ) in the range of 11:9 to 41:59.
5. The gas supply assembly of claim 1 wherein H 2 is present in an amount in the range of 47-57% of the gas mixture, or GeF 4 and H 2 are present in a volume ratio (GeF 4 :H 2 ) in the range of 53:47 to 43:57.
6. The gas supply assembly of claim 1 wherein Hz is present in an amount in the range of 49-55% of the gas mixture, or GeF 4 and H 2 are present in a volume ratio (GeF 4 :H 2 ) in the range of 51:49 to 9:11.
7. The gas supply assembly of claim 1 wherein Hz is present in an amount in the range of 51-53% of the gas mixture, or GeF 4 and H 2 are present in a volume ratio (GeF 4 :H 2 ) in the range of 49:51 to 47:53.
8. The gas supply assembly of claim 1 , wherein the gases consist essentially of GeF 4 and H 2 .
9. The gas supply assembly of claim 1 , further comprising an inert gas selected from the group consisting of argon, helium, neon, nitrogen, xenon, and krypton.
10. The gas supply assembly of claim 1 , wherein GeF 4 and H 2 are mixed in a single fluid supply package.
11. The gas supply assembly of claim 1 , wherein GeF 4 is present in a GeF 4 -containing gas supply package and H 2 is present in a separate Hz-containing gas supply package.
12. The gas supply assembly of claim 1 , wherein GeF 4 is not isotopically enriched.
13. A method of implanting germanium in a substrate, comprising introducing germanium tetrafluoride (GeF 4 ) and hydrogen (H 2 ) gases into an ion implantation chamber comprising, wherein introducing provides a gas mixture comprising GeF 4 and H 2 an ion implantation chamber, wherein H 2 is present in an amount in the range of 25%-67%, or GeF 4 and H 2 are present in a volume ratio (GeF 4 :H 2 ) in the range of 3:1 to 33:67.