Heterostructure and method of fabrication
The present invention relates to a heterostructure, in particular, a piezoelectric structure, comprising a cover layer, in particular, a layer of piezoelectric material, the material of the cover layer having a first coefficient of thermal expansion, assembled to a support substrate, the support substrate having a second coefficient of thermal expansion substantially different from the first coefficient of thermal expansion, at an interface wherein the cover layer comprises at least a recess extending from the interface into the cover layer, and its method of fabrication.
1. A substrate for use in fabricating an acoustic wave device, comprising:
a support substrate;
a charge trapping layer on a surface of the support substrate; and
a piezoelectric material bonded over the charge trapping layer on a side thereof opposite the support substrate along a bonding interface; and
a layer of adhesive material between the piezoelectric material and the charge trapping layer;
wherein the bonding interface is located between the piezoelectric material and the charge trapping layer.
2. The substrate of claim 1 , wherein the layer of adhesive material comprises a layer of electrically insulating material between the piezoelectric material and the charge trapping layer, and wherein the bonding interface comprises a molecular bonding interface located within or adjacent the layer of electrically insulating material.
3. The substrate of claim 2 , wherein the layer of electrically insulating material comprises at least one oxide layer.
4. The substrate of claim 1 , wherein the layer of adhesive material comprises resin or glue.
5. The substrate of claim 1 , wherein the charge trapping layer electrically disconnects or decouples the piezoelectric material from the support substrate and reduces electrical loss of signals within the piezoelectric material during operation of an acoustic wave device fabricated on the substrate.
6. The substrate of claim 5 , wherein the piezoelectric material is lithium tantalate.
7. The substrate of claim 1 , wherein the piezoelectric material has a thickness below 10 μm.
8. The substrate of claim 7 , wherein the piezoelectric material has a thickness below 1 μm.
9. The substrate of claim 8 , wherein the piezoelectric material has a thickness below 100 nm.
10. The substrate of claim 1 , wherein the piezoelectric material comprises at least one material selected from among the group consisting of: Lithium Tantalate (LTO), Lithium Niobate (LNO), Aluminum Nitride (AlN), and Zinc Oxide (ZnO).
11. The substrate of claim 1 , wherein the charge trapping layer has a thickness below 10 μm.
12. The substrate of claim 1 , wherein the support substrate comprises at least one material selected from among the group consisting of: Si, Ge, GaAs, InP, SiGe, and sapphire.
13. The substrate of claim 1 , wherein the support substrate has a resistivity higher than 1 kOhm/cm.
14. The substrate of claim 13 , wherein the support substrate has a resistivity higher than 5 kOhm/cm.
15. The substrate of claim 1 , wherein the piezoelectric material has a first coefficient of thermal expansion, and the support substrate has a second coefficient of thermal expansion different from the first coefficient of thermal expansion.
16. The substrate of claim 15 , further comprising at least one recess extending at least partially into the piezoelectric material from a side thereof proximate the support substrate.
17. The substrate of claim 16 , wherein the at least one recess comprises a trench.
18. A substrate for use in fabricating an acoustic wave device, comprising:
a support substrate;
a charge trapping layer on a surface of the support substrate; and
a piezoelectric material bonded over the charge trapping layer on a side thereof opposite the support substrate along a bonding interface;
wherein the bonding interface is located between the piezoelectric material and the charge trapping layer; and
wherein the charge trapping layer has a thickness below 1 μm.
19. The substrate of claim 18 , wherein the charge trapping layer has a thickness below 100 nm.
20. A substrate for use in fabricating an acoustic wave device, comprising:
a support substrate comprising at least one material selected from among the group consisting of: Si, Ge, GaAs, InP, SiGe, and sapphire;
a porous and/or polycrystalline trap-rich layer on a surface of the support substrate;
a piezoelectric material bonded over the porous and/or polycrystalline trap-rich layer on a side thereof opposite the support substrate, the piezoelectric material comprising at least one material selected from among the group consisting of: Lithium Tantalate (LTO), Lithium Niobate (LNO), Aluminum Nitride (AlN), and Zinc Oxide (ZnO); and
a layer of adhesive material between the piezoelectric material and the porous and/or polycrystalline trap-rich layer.
21. The substrate of claim 20 , wherein the piezoelectric material has a thickness below 10 μm, the trap-rich layer has a thickness below 10 μm, and the substrate has a resistivity higher than 1 kOhm/cm.
22. The substrate of claim 20 , further comprising at least one recess extending at least partially into the piezoelectric material from a side thereof proximate the support substrate.
23. The substrate of claim 20 , wherein the piezoelectric material has a first coefficient of thermal expansion, and the support substrate has a second coefficient of thermal expansion different from the first coefficient of thermal expansion.