Electronic device packages with internal moisture barriers
A method of packaging a radio frequency (RF) transistor device includes attaching one or more electronic devices to a carrier substrate, applying an encapsulant over at least one of the one or more electronic devices, and providing a protective structure on the carrier substrate over the one or more electronic devices. A packaged RF transistor device includes a carrier substrate, one or more electronic devices attached to the carrier substrate, an encapsulant material over at least one of the one or more electronic devices and extending onto the carrier substrate, and a protective structure on the carrier substrate over the one or more electronic devices and the encapsulant material.
1. A method of packaging a transistor device, comprising:
attaching a plurality of electronic devices to a carrier substrate, the plurality of electronic devices comprising a radio frequency (RF) transistor die having an operating frequency greater than 1 GHz and an auxiliary electronic device;
applying an encapsulant material over one of the RF transistor die and the auxiliary electronic device and not over the other of the RF transistor die and the auxiliary electronic device, wherein the encapsulant material comprises a curable encapsulant material;
providing a protective structure on the carrier substrate over the plurality of electronic devices and the encapsulant material, wherein the protective structure comprises a plastic overmolding on the carrier substrate, wherein the plastic overmolding contacts the carrier substrate and covers the encapsulant material and the plurality of electronic devices; and
curing the curable encapsulant material after providing the protective structure over the plurality of electronic devices and the encapsulant material.
2. The method of claim 1 , wherein the curable encapsulant material comprises a curable liquid encapsulant material, wherein applying the encapsulant material comprises dispensing the curable liquid encapsulant material over the one of the RF transistor die and the auxiliary electronic device.
3. The method of claim 1 , wherein the encapsulant material comprises a polytetrafluoroethylene (PTFE) based material.
4. The method of claim 1 , the method further comprising connecting the auxiliary electronic device to the RF transistor die prior to providing the encapsulant material over the one of the RF transistor die and the auxiliary electronic device.
5. The method of claim 1 , wherein the plastic overmolding contacts the encapsulant material.
6. The method of claim 1 , wherein the encapsulant material and the plastic overmolding have different coefficients of thermal expansion.
7. The method of claim 1 , wherein the encapsulant material and the plastic overmolding have different hardness.
8. The method of claim 1 , further comprising fully curing the curable encapsulant material after providing the protective structure over the plurality of electronic devices and the encapsulant material.
9. The method of claim 1 , further comprising at least partially curing the curable encapsulant material after providing the protective structure over the plurality of electronic devices and the encapsulant material.
10. The method of claim 1 , wherein curing the curable encapsulant material comprises exposing the curable encapsulant material to light, heat, radiation or ultrasonic energy.
11. The method of claim 1 , wherein the curable encapsulant material includes a curing agent, and wherein applying the curable encapsulant material comprises applying the curing agent onto the one of the RF transistor die and the auxiliary electronic device.
12. The method of claim 1 , wherein attaching the plurality of electronic devices to the carrier substrate comprises attaching at least one of the plurality of electronic devices to the carrier substrate with sintered silver or a eutectic die attach.
13. The method of claim 1 , wherein the encapsulant material comprises a liquid silicone, polyimide, benzocyclobutene and/or a liquid epoxy resin.
14. The method of claim 1 , wherein attaching the plurality of electronic devices to the carrier substrate comprises forming solder bumps on the plurality of electronic devices and/or the carrier substrate and attaching the plurality of electronic devices to the carrier substrate via the solder bumps, wherein the encapsulant material extends between the plurality of electronic devices and the carrier substrate.
15. The method of claim 1 , further comprising forming an encapsulant dam on the carrier substrate around the plurality of electronic devices, wherein the encapsulant dam defines a die attach region of the carrier substrate, and wherein the encapsulant material is provided within the die attach region.
16. The method of claim 1 , wherein the RF transistor die comprises a high electron mobility transistor, a field effect transistor or a monolithic microwave integrated circuit.
17. The method of claim 1 , wherein the RF transistor die comprises a GaN-based device or a SiC-based device.
18. A method of packaging a transistor device, comprising:
attaching one or more electronic devices to a carrier substrate, the one or more electronic devices comprising a transistor die;
applying an encapsulant material over at least one of the one or more electronic devices, wherein the encapsulant material comprises a curable encapsulant material;
providing a protective structure on the carrier substrate over the one or more electronic devices and the encapsulant material;
providing an adhesive between the protective structure and the carrier substrate, and simultaneously curing the curable encapsulant material and the adhesive.
19. The method of claim 18 , wherein the adhesive comprises an epoxy glue.