Pattern formation method, block copolymer, and pattern formation material
According to one embodiment, a pattern formation method is disclosed. The method includes a preparation process, a block copolymer layer formation process, and a contact process. The preparation process includes preparing a pattern formation material including a block copolymer including a first block and a second block. The first block includes a first main chain and a plurality of first side chains. At least one of the first side chains includes a plurality of carbonyl groups. The block copolymer layer formation process includes forming a block copolymer layer on a first member. The block copolymer layer includes the pattern formation material and includes a first region and a second region. The first region includes the first block. The second region includes the second block. The contact process includes causing the block copolymer layer to contact a metal compound including a metallic element.
1. A pattern formation method, comprising:
preparing a pattern formation material including a block copolymer having a first block and a second block, the first block including a first main chain and a plurality of first side chains, at least one of the first side chains including a plurality of carbonyl groups;
forming a block copolymer layer including the pattern formation material on a first member, the block copolymer layer including a first region and a second region, the first region including the first block, the second region including the second block; and
contact a metal compound including a metallic element to the block copolymer layer,
wherein the first block includes at least one selected from the group consisting of an acetonyl acrylic acid ester and acetonyl methacrylic acid ester.
2. The method according to claim 1 , wherein forming the block copolymer layer includes phase separation of the first block and the second block.
3. The method according to claim 1 , wherein a direction from the first region toward the second region is along the first member.
4. The method according to claim 1 , wherein the second block includes a second main chain and a plurality of second side chains, at least one of the second side chain not including a plurality of carbonyl groups.
5. The method according to claim 1 , wherein
the second block includes a second main chain and a plurality of second side chains, and
at least one of the second side chains includes at least one selected from the group consisting of benzene, naphthalene, and methyl.
6. The method according to claim 1 , wherein
the second block includes a second main chain, and
the second main chain includes at least one selected from the group consisting of a double bond and an ether bond.
7. The method according to claim 1 , wherein
the second block does not include a carbonyl group, or
the second block includes a carbonyl group, and a ratio of a concentration of the carbonyl group included in the second block to a concentration of the carbonyl group included in the first block is 0.5 or less.
8. The method according to claim 1 , wherein the metal compound is in a liquid state or a gas state.
9. The method according to claim 1 , wherein the metallic element includes at least one selected from the group consisting of aluminum, zinc, titanium, and tungsten.
10. The method according to claim 1 , further comprising, removing at least a portion of the second region and removing at least a portion of the first member after contacting a metal compound including a metallic element to the block copolymer layer, the at least a portion of the first member not overlapping the first region.
11. The method according to claim 1 , wherein the pattern formation material further includes a solvent.
12. The method according to claim 11 , wherein the solvent includes at least one selected from the group consisting of propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, anisole, toluene, ethyl lactate, and tetrahydrofuran.
13. The method according to claim 1 , wherein the concentration of the block copolymer of the pattern formation material is not less than 0.01 weight % and not more than 50 weight %.
14. The method according to claim 1 , wherein the metal compound is introduced in the first region.