Onium salt compound, chemically amplified resist composition and patterning process
An onium salt having formula (1) serving as an acid diffusion inhibitor and a chemically amplified resist composition comprising the acid diffusion inhibitor are provided. When processed by lithography, the resist composition exhibits dissolution contrast, acid diffusion suppressing effect, and excellent lithography performance factors such as CDU, LWR and sensitivity.
1. An onium salt compound having the formula (1):
wherein R 1 and R 2 are each independently hydrogen or a C 1 -C 10 hydrocarbyl group which may contain a heteroatom, R 1 and R 2 may bond together to form a ring with the carbon atom to which they are attached,
R f1 and R f2 are each independently hydrogen, fluorine or trifluoromethyl, at least one thereof being fluorine or trifluoromethyl,
L 1 is a single bond or carbonyl group,
Ar is a (n+1)-valent C 3 -C 15 aromatic group which may have a substituent,
n is an integer of 1 to 5,
M + is an ammonium, sulfonium or iodonium cation,
R is a group having the following formula (R-1), (R-2), (R-3), (R-4) or (R-5):
wherein R r1 , R r2 , R r3 and R r4 are each independently a C 1 -C 10 hydrocarbyl group, R r1 and R r2 may bond together to form a ring with the carbon atom to which they are attached,
R r5 and R r6 are each independently hydrogen or a C 1 -C 5 hydrocarbyl group, any two of R r4 , R r5 and R r6 may bond together to form a ring with the atom to which they are attached,
the broken line designates a valence bond to Ar in formula (1).
2. The onium salt compound of claim 1 , having the formula (2):
wherein R and M + are as defined in claim 1 ,
n is an integer of 1 to 5, m is an integer of 0 to 4, n+m is 5,
R 3 is hydrogen or a C 1 -C 10 hydrocarbyl group which may contain a heteroatom,
R 4 is hydrogen, fluorine, iodine, hydroxyl, or a C 1 -C 10 hydrocarbyl group which may contain a heteroatom, a constituent —CH 2 — in the hydrocarbyl group may be replaced by an ether bond or carbonyl moiety, with the proviso that when m is 2 or more, a plurality of R 4 may be the same or different, or two R 4 may bond together to form a ring with the carbon atoms to which they are attached.
3. The onium salt compound of claim 2 wherein R 3 is hydrogen, isopropyl, adamantyl or optionally substituted phenyl.
4. The onium salt compound of claim 1 wherein R is a group having formula (R-1) or (R-2).
5. The onium salt compound of claim 1 wherein M + is a cation having any one of the following formulae (M-1) to (M-4):
wherein R M1 , R M2 , R M3 , R M4 , and R M5 are each independently hydrogen, halogen, hydroxyl, or a C 1 -C 15 hydrocarbyl group which may contain a heteroatom, —CH 2 — in the hydrocarbyl group may be replaced by an ether bond, carbonyl moiety or sulfonyl moiety,
L 2 and L 3 are each independently a single bond, methylene group, ether bond, thioether bond, carbonyl group, sulfinyl group, sulfonyl group or —N(R N )—, R N is hydrogen or a C 1 -C 10 hydrocarbyl group which may contain a heteroatom, —CH 2 — in the hydrocarbyl group may be replaced by an ether bond, carbonyl moiety or sulfonyl moiety,
p, q, r, s and t are each independently an integer of 0 to 5,
when p is 2 or more, a plurality of R M1 may be the same or different, and two R M1 may bond together to form a ring with the carbon atoms on the benzene ring to which they are attached, when q is 2 or more, a plurality of R M2 may be the same or different, and two R M2 may bond together to form a ring with the carbon atoms on the benzene ring to which they are attached, when r is 2 or more, a plurality of R M3 may be the same or different, and two R M3 may bond together to form a ring with the carbon atoms on the benzene ring to which they are attached, when s is 2 or more, a plurality of R M4 may be the same or different, and two R M4 may bond together to form a ring with the carbon atoms on the benzene ring to which they are attached, when t is 2 or more, a plurality of R M5 may be the same or different, and two R M5 may bond together to form a ring with the carbon atoms on the benzene ring to which they are attached.
6. The onium salt compound of claim 5 , having the following formula (3) or (4):
wherein R r1 , R r2 , R r3 , R M1 , R M2 , R M3 , L 2 , p, q r, and m are as defined in claim 5 ,
R 5 is hydrogen, fluorine, hydroxyl, or a C 1 -C 5 hydrocarbyl group in which —CH 2 — may be replaced by an ether bond or carbonyl moiety, and when m is 2 or more, a plurality of R 5 may be the same or different, and two R 5 may bond together to form a ring with the carbon atoms to which they are attached.
7. An acid diffusion inhibitor comprising the onium salt compound of claim 1 .
8. A chemically amplified resist composition comprising (A) a base polymer adapted to change its solubility in a developer under the action of an acid, (B) a photoacid generator, (C) an acid diffusion inhibitor comprising the onium salt compound of claim 1 , and (D) an organic solvent.
9. A chemically amplified resist composition comprising (A′) a base polymer adapted to change its solubility in a developer under the action of an acid, the base polymer comprising recurring units having a function of generating an acid upon exposure to light, (C) an acid diffusion inhibitor comprising the onium salt compound of claim 1 , and (D) an organic solvent.
10. The resist composition of claim 8 wherein the base polymer comprises recurring units having the formula (a) or recurring units having the formula (b):
wherein R A is each independently hydrogen or methyl, X A is a single bond, phenylene group, naphthylene group or (backbone)-C(═O)—O—X A1 —, X A1 is a C 1 -C 15 hydrocarbylene group which may contain a hydroxyl moiety, ether bond, ester bond or lactone ring, X B is a single bond or ester bond, AL 1 and AL 2 are each independently an acid labile group.
11. The resist composition of claim 10 wherein the acid labile group has the formula (L1), (L2) or (L3):
wherein R 11 is each independently a C 1 -C 7 hydrocarbyl group in which —CH 2 — may be replaced by an ether bond, a is 1 or 2, and the broken line designates a valence bond.
12. The resist composition of claim 8 wherein the base polymer comprises recurring units having the formula (c):
wherein R A is hydrogen or methyl, Y A is a single bond or ester bond, R 21 is fluorine, iodine or a C 1 -C 10 hydrocarbyl group in which —CH 2 — may be replaced by an ether bond or carbonyl moiety, b is an integer of 1 to 5, c is an integer of 0 to 4, and b+c is 1 to 5.
13. The resist composition of claim 9 wherein the recurring units having a function of generating an acid upon exposure to light are units of at least one type selected from the formulae (d1) to (d4):
wherein R B is each independently hydrogen, fluorine, methyl or trifluoromethyl,
Z A is a single bond, phenylene group, —O—Z A1 —, —C(═O)—O—Z A1 — or —C(═O)—NH—Z A1 —, Z A1 is a C 1 -C 20 hydrocarbylene group which may contain a heteroatom,
Z B and Z C are each independently a single bond or a C 1 -C 20 hydrocarbylene group which may contain a heteroatom,
Z D is a single bond, methylene, ethylene, phenylene, fluorinated phenylene, —C(═O)—O—Z D1 — or —C(═O)—NH—Z D1 —, Z D1 is an optionally substituted phenylene group,
R 31 to R 41 are each independently a C 1 -C 20 hydrocarbyl group which may contain a heteroatom, any two of Z A , R 31 and R 32 may bond together to form a ring with the sulfur atom to which they are attached, any two of R 33 , R 34 and R 35 , any two of R 36 , R 37 and R 38 , and any two of R 39 , R 40 and R 41 may bond together to form a ring with the sulfur atom to which they are attached,
R HF is hydrogen or trifluoromethyl,
n 1 is 0 or 1, n 1 is 0 when Z B is a single bond, n 2 is 0 or 1, n 2 is 0 when Z C is a single bond, and
Xa − is a non-nucleophilic counter ion.
14. A pattern forming process comprising the steps of applying the chemically amplified resist composition of claim 8 to form a resist film on a substrate, exposing a selected region of the resist film to KrF excimer laser, ArF excimer laser, EB or EUV, and developing the exposed resist film in a developer.
15. The pattern forming process of claim 14 wherein the developing step uses an alkaline aqueous solution as the developer, thereby forming a positive pattern in which an exposed region of the resist film is dissolved away and an unexposed region of the resist film is not dissolved.
16. The pattern forming process of claim 14 wherein the developing step uses an organic solvent as the developer, thereby forming a negative pattern in which an unexposed region of the resist film is dissolved away and an exposed region of the resist film is not dissolved.
17. The pattern forming process of claim 16 wherein the organic solvent is at least one solvent selected from the group consisting of 2-octanone, 2-nonanone, 2-heptanone, 3-heptanone, 4-heptanone, 2-hexanone, 3-hexanone, diisobutyl ketone, methylcyclohexanone, acetophenone, methylacetophenone, propyl acetate, butyl acetate, isobutyl acetate, pentyl acetate, butenyl acetate, isopentyl acetate, propyl formate, butyl formate, isobutyl formate, pentyl formate, isopentyl formate, methyl valerate, methyl pentenoate, methyl crotonate, ethyl crotonate, methyl propionate, ethyl propionate, ethyl 3-ethoxypropionate, methyl lactate, ethyl lactate, propyl lactate, butyl lactate, isobutyl lactate, pentyl lactate, isopentyl lactate, methyl 2-hydroxyisobutyrate, ethyl 2-hydroxyisobutyrate, methyl benzoate, ethyl benzoate, phenyl acetate, benzyl acetate, methyl phenylacetate, benzyl formate, phenylethyl formate, methyl 3-phenylpropionate, benzyl propionate, ethyl phenylacetate, and 2-phenylethyl acetate.
18. The onium salt compound of claim 1 wherein both R f1 and R f2 are fluorine.
19. The onium salt compound of claim 1 wherein one of R 1 and R 2 is hydrogen.