Three-dimensional memory device including discrete charge storage elements and methods of forming the same
An alternating stack of disposable material layers and silicon nitride layers is formed over a substrate. Memory openings are formed through the alternating stack, and memory opening fill structures are formed in the memory openings, wherein each of the memory opening fill structures comprises a charge storage material layer, a tunneling dielectric layer, and a vertical semiconductor channel Laterally-extending cavities are formed by removing the disposable material layers selective to the silicon nitride layers and the memory opening fill structures. Insulating layers comprising silicon oxide are formed by oxidizing surface portions of the silicon nitride layers and portions of the charge storage material layers that are proximal to the laterally-extending cavities. Remaining portions of the charge storage material layers form vertical stacks of discrete charge storage elements. Remaining portions of the silicon nitride layers are replaced with electrically conductive layers.
1. A three-dimensional memory device comprising:
an alternating stack of insulating layers and electrically conductive layers located over a substrate;
memory openings vertically extending through the alternating stack; and
memory opening fill structures located in the memory openings, wherein:
each of the memory opening fill structures comprises a vertical semiconductor channel and a memory film; and
the memory film comprises a tunneling dielectric layer and a vertical stack of discrete charge storage elements that are vertically spaced apart from each other by lateral protrusion portions of a subset of the insulating layers;
wherein each of the subset of the insulating layers comprises:
an upper lobe portion that contacts an outer sidewall of one of the discrete charge storage elements; and
a lower lobe portion that contacts an outer sidewall of another one of the discrete charge storage elements; and
wherein:
the vertical stack of discrete charge storage elements comprises silicon nitride portions; and
the lateral protrusion portion of each of the subset of the insulating layers comprises silicon oxynitride at interfacial regions near the vertical stack of discrete charge storage elements such that atomic concentration of nitrogen atoms decreases with a distance from the interfaces with the vertical stack of discrete charge storage elements.
2. The three-dimensional memory device of claim 1 , wherein the upper lobe portions and the lower lobe portions of the subset of insulating layers are free of nitrogen atoms or comprises nitrogen atoms at an average atomic concentration less than 10% of an average atomic concentration of nitrogen atomic within the lateral protrusion portions.
3. A three-dimensional memory device comprising:
an alternating stack of insulating layers and electrically conductive layers located over a substrate;
memory openings vertically extending through the alternating stack; and
memory opening fill structures located in the memory openings, wherein:
each of the memory opening fill structures comprises a vertical semiconductor channel and a memory film; and
the memory film comprises a tunneling dielectric layer and a vertical stack of discrete charge storage elements that are vertically spaced apart from each other by lateral protrusion portions of a subset of the insulating layers;
wherein the insulating layers comprise a respective horizontal seam that does not contact the memory opening fill structure.
4. The three-dimensional memory device of claim 3 , wherein the insulating layers comprise silicon oxide that is free of carbon atoms or comprise carbon atoms at an atomic concentration less than 1 part per million.
5. A three-dimensional memory device comprising:
an alternating stack of insulating layers and electrically conductive layers located over a substrate;
memory openings vertically extending through the alternating stack; and
memory opening fill structures located in the memory openings, wherein:
each of the memory opening fill structures comprises a vertical semiconductor channel and a memory film; and
the memory film comprises a tunneling dielectric layer and a vertical stack of discrete charge storage elements that are vertically spaced apart from each other by lateral protrusion portions of a subset of the insulating layers;
wherein:
each of the subset of the insulating layers comprises silicon oxide and has a uniform thickness region having a respective uniform thickness;
an upper surface portion of the uniform thickness region is doped nitrogen atoms such that atomic concentration of nitrogen atoms increases with a vertical distance from the substrate; and
a lower surface portion of the uniform thickness region is doped with nitrogen atomic such that atomic concentration of nitrogen atoms decreases with the vertical distance from the substrate.