Vertically integrated device stack including system on chip and power management integrated circuit

1. An integrated semiconductor device, comprising:

at least one package substrate having a first surface, a second surface, and a plurality of first interconnects, wherein the at least one package substrate is configured to be electrically coupled to a socket substrate via a plurality of electrical connectors, and the socket substrate has a third surface configured to face the second surface of the at least one package substrate;

a system-on-chip (SoC) die disposed on the first surface of the at least one package substrate; and

a power management integrated circuit (PMIC) package that is mechanically coupled to the second surface of the at least one package substrate, wherein:

the PMIC package is electrically coupled to the SOC die via the plurality of first interconnects of the at least one package substrate and configured to provide direct current (DC) power to the SoC die via a plurality of DC connections electrically coupled to the plurality of first interconnects of the at least one package substrate; and

the PMIC package includes a plurality of thin film inductors corresponding to the plurality of DC connections, and the plurality of thin film inductors is formed in the PMIC package surface coupling the second surface of the at least one package substrate, at least one of the plurality of thin film inductors having a first stack of magnetic layers, a second stack of magnetic layers, and a conductive wire disposed between the first stack of magnetic layers and the second stack of magnetic layers,

wherein the PMIC package is configured to provide a first internal supply voltage and a ground to the SoC die via the plurality of DC connections of the PMIC package and the plurality of first interconnects of the at least one package substrate, the integrated semiconductor device further comprising:

a plurality of first power rails that are physically separated from each other and electrically coupled to the first internal supply voltage; and

a plurality of second power rails that are physically separated from each other and electrically coupled to the ground;

wherein each of the plurality of first power rails and the plurality of second power rails is formed on one of the SoC die, the at least one package substrate, and the PMIC die.

2. The integrated semiconductor device of claim 1 , wherein:

at least two of the plurality of thin film inductors are electrically coupled to each other via respective conductive wires; and

the respective conductive wires of the at least two of the plurality of thin film inductors are electrically connected in series.

3. The integrated semiconductor device of claim 1 , wherein the SoC die is a flip-chip coupled onto the first surface of the at least one package substrate and includes a plurality of signal inputs/outputs (I/Os) and a plurality of power connections.

4. The integrated semiconductor device of claim 3 , wherein:

the plurality of power connections is located on a first region of the SoC die and aligned with the plurality of first interconnects of the at least one package substrate; and

the plurality of power connections is electrically coupled to the plurality of DC connections of the PMIC die via the plurality of first interconnects and configured to receive the DC power from the PMIC package.

5. The integrated semiconductor device of claim 4 , wherein:

the plurality of signal I/Os is located on a second region of the SoC die and electrically coupled to a plurality of first interconnect wires of the at least one package substrate; and

each of the plurality of first interconnect wires is routed between two conductive contacts that are respectively located on the first and second surfaces of the at least one package substrate, and electrically coupled to a respective one of the plurality of electrical connectors coupled between the at least one package substrate and the socket substrate.

6. The integrated semiconductor device of claim 5 , wherein:

the second region is distinct from the first region, such that the plurality of power connections are physically separated from the plurality of signal I/Os.

7. The integrated semiconductor device of claim 3 , further comprising a first interposer disposed between the SoC die and the first surface of the at least one package substrate, wherein the first interposer further includes a plurality of second interconnects configured to electrically couple the plurality of power connections and the plurality of signal I/Os of the SoC die to the at least one package substrate.

8. The integrated semiconductor device of claim 7 , further comprising a second interposer disposed between the at least one package substrate and the PMIC package, wherein the second interposer further includes a plurality of third interconnects configured to electrically couple the plurality of power connections of the SoC die to the plurality of DC connections of the PMIC package.

9. The integrated semiconductor device of claim 1 , further comprising a plurality of output capacitors electrically coupled to the plurality of DC connections provided by the PMIC package, and the plurality of output capacitors is formed on one of the SoC die, the at least one package substrate, and the PMIC package and has a capacitor footprint that substantially overlaps a first footprint of the SoC die or a second footprint of the PMIC package.

10. The integrated semiconductor device of claim 1 , further comprising a plurality of output capacitors electrically coupled to a first subset of the plurality of DC connections in the PMIC package to provide the first internal supply voltage, and the plurality of output capacitors is formed on the one of the SoC die, the at least one package substrate, and the PMIC package where the plurality of first power rails and the plurality of second power rails are formed.

11. The integrated semiconductor device of claim 1 , wherein the PMIC package includes a power management interface and a plurality of DC-DC converters, and the PMIC package is configured to receive an input DC supply and outputs a plurality of internal supply voltages at the plurality of DC connections using the plurality of DC-DC converters.

12. The integrated semiconductor device of claim 11 , wherein one of the plurality of DC-DC converters includes one of the plurality of thin film inductors, and the one of the plurality of thin film inductors is electrically coupled to one of the plurality of DC connections.

13. The integrated semiconductor device of claim 11 , wherein the PMIC package is electrically coupled to a power source and configured to receive the input DC supply from the power source via one or more interconnect wires of the at least one package substrate and a subset of the plurality of electrical connectors.

14. The integrated semiconductor device of claim 1 , further comprising the socket substrate, wherein the socket substrate includes a recessed portion formed on the third surface and configured to receive the PMIC package.

15. The integrated semiconductor device of claim 1 , further comprising the socket substrate, wherein the socket substrate includes a fourth surface opposing the third surface and a plurality of socket contacts formed on the fourth surface, and each of the plurality of electrical connectors is electrically coupled to a respective one of the plurality of socket contacts by one of a second interconnect wire or a through socket via.

16. The integrated semiconductor device of claim 1 , further comprising at least one of:

a first electronic component disposed on the first surface of the at least one package substrate and electrically coupled to the SoC die; and

a second electronic component disposed on the second surface of the at least one package substrate and electrically coupled to the PMIC package.

17. The integrated semiconductor device of claim 1 , wherein the SoC die is configured to face away from the first surface of the at least one package substrate, and wherein the SoC die includes a plurality of signal inputs/outputs (I/Os) and a plurality of power connections, and each of the plurality of signal I/Os and the plurality of power connections is electrically coupled to a conductive contact on the first surface of the at least one package substrate via a bonding wire.

18. The integrated semiconductor device of claim 1 , further comprising a cover coupled to the first surface of the at least one package substrate, wherein the cover is configured to conceal the SoC die and at least part of the first surface of the at least one package substrate.

19. The integrated semiconductor device of claim 1 , wherein:

each of the plurality of thin film inductors includes a respective conductive wire;

at least two of the plurality of thin film inductors are electrically coupled to each other via the respective conductive wires; and

the respective conductive wires of the at least two of the plurality of thin film inductors are electrically connected in parallel.