Substrate processing apparatus and substrate processing method
A substrate processing apparatus includes a temperature detector, a calculation unit and an execution unit. The temperature detector is configured to detect a temperature of a substrate on which a processing liquid is discharged. The calculation unit is configured to calculate, by using a given calculation formula, an etching amount of the substrate based on the temperature detected by the temperature detector. The execution unit configured to perform an etching processing on the substrate by the processing liquid based on the etching amount.
1. A substrate processing apparatus, comprising:
a temperature detector configured to detect a temperature of a surface of a substrate on which a processing liquid is being discharged toward the surface of the substrate from a nozzle;
a calculation unit configured to calculate, by using a given calculation formula, an etching amount of the substrate based on the temperature of the surface of the substrate detected by the temperature detector; and
an execution unit configured to perform an etching processing on the substrate by the processing liquid based on the etching amount,
wherein the temperature detector is further configured to detect when the substrate reaches a target temperature, and
wherein the given calculation formula is a formula of an exponential function of the temperature and a processing time in the etching processing, the temperature being an average temperature of the surface of the substrate after the substrate reaches the target temperature, and the processing time being a difference value between a supply time of the processing liquid and a time when the substrate reaches the target temperature,
wherein the given calculation formula is
D =( a ×exp( b×T ave))×( t 1− t 0)
wherein D is the etching amount, Tave is the average temperature, t 1 is the supply time of the processing liquid, t 0 is the time when the substrate reaches the target temperature, and a and b are exponential approximation fitting values.
2. The substrate processing apparatus of claim 1 ,
wherein the execution unit stops a discharge of the processing liquid when the etching amount reaches a preset value.
3. The substrate processing apparatus of claim 1 ,
wherein the execution unit is further configured to etch titanium nitride and tungsten films formed on the substrate by the processing liquid.
4. The substrate processing apparatus of claim 1 ,
wherein the processing liquid is dilute sulfuric acid prepared by diluting sulfuric acid with pure water.
5. The substrate processing apparatus of claim 4 ,
wherein the processing liquid has a concentration in which a volume ratio between the sulfuric acid and the pure water ranges from 1:1 to 20:1.
6. The substrate processing apparatus of claim 4 ,
wherein the processing liquid has a temperature equal to or higher than 50° C. and equal to or lower than a boiling point of the processing liquid.