Singulation systems and related methods
Implementations of a semiconductor substrate singulation process may include applying a fluid jet to a material of a die street of a plurality of die streets included in a semiconductor substrate where the semiconductor substrate may include: a plurality of die separated by the plurality of die streets; and a plurality of die support structures coupled thereto; and singulating the plurality of die and the plurality of die support structures at the plurality of die streets using the fluid jet. The fluid jet may be moved only along a length of the die street.
1. A semiconductor substrate singulation process comprising:
applying a first fluid jet to a material of a die street of a first plurality of die streets comprised in a semiconductor substrate, the semiconductor substrate further comprising:
a plurality of die separated by the first plurality of die streets and a second plurality of die streets; and
a plurality of die support structures coupled thereto;
applying a second fluid jet to a material of a die street of the second plurality of die streets comprised in the semiconductor substrate; and
singulating the plurality of die and the plurality of die support structures at the first plurality of die streets and the second plurality of die streets using the first fluid jet and the second fluid jet simultaneously;
wherein the first fluid jet is moved only along a length of the die street of the first plurality of die streets;
wherein each die of the plurality of die is singulated using both the first fluid jet and the second fluid jet; and
wherein the first fluid jet removes the material of the die street of the first plurality of die streets having a thickness equal to a thickness of the semiconductor substrate.
2. The process of claim 1 , wherein the first fluid jet is moved by moving the semiconductor substrate.
3. The process of claim 1 , wherein the first fluid jet is moved by moving the first fluid jet relative to the semiconductor substrate.
4. The process of claim 1 , wherein the plurality of die support structures comprises a mold compound.
5. The process of claim 1 , wherein the first fluid jet comprises a plurality of particles.
6. The process of claim 1 , wherein the first fluid jet is pulsed at a predetermined frequency.
7. Process of claim 1 , further comprising repeatedly applying the first fluid jet to the material of the die street of the first plurality of die streets prior to singulating the plurality of die and the plurality of die support structures.
8. The process of claim 1 , wherein a spacing between the first fluid jet and the second fluid jet is a distance equal to a pitch of one of the plurality of die or a plurality of packages.
9. A semiconductor substrate singulation process comprising:
applying one of a first fluid jet or a first laser beam to a material of a die street of a first plurality of die streets comprised in a semiconductor substrate, the semiconductor substrate comprising a plurality of die separated by the first plurality of die streets and a second plurality of die streets;
applying one of a second fluid jet or a second laser beam to a material of a die street of the second plurality of die streets; and
die-by-die singulating the plurality of die at the first plurality of die streets and the second plurality of die streets using the one of the first fluid jet or the first laser beam and one of the second fluid jet or the second laser beam;
wherein one of the first fluid jet or the first laser beam singulates the plurality of die by removing the material of the die street having a thickness equal to an entire thickness of the semiconductor substrate; and
wherein die-by-die singulating comprises intersecting one of the first fluid jet or the first laser beam with the one of the second fluid jet or the second laser beam at a beginning of singulating and at an end of singulating each die of the plurality of die.
10. The process of claim 9 , further comprising coupling a plurality of die support structures to the plurality of die.
11. The process of claim 10 , wherein the plurality of die support structures and the plurality of die form a plurality of semiconductor packages.
12. The process of claim 9 , wherein the first fluid jet comprises a plurality of particles.
13. A semiconductor substrate singulation process comprising:
applying one of a first fluid jet or a first laser beam to a material of a die street of a first plurality of die streets comprised in a semiconductor substrate, the semiconductor substrate comprising a plurality of die separated by the first plurality of die streets and a second plurality of die streets;
applying one of a second fluid jet or a second laser beam to a material of a die street of the second plurality of die streets comprised in the semiconductor substrate; and
zigzag singulating the plurality of die at the first plurality of die streets and second plurality of die streets by removing an entire thickness of the material of the die street of the first plurality of die streets using one of the first fluid jet or the first laser beam and removing an entire thickness of the material of the die street of the second plurality of die streets using one of the second fluid jet or the second laser beam;
wherein one of the first fluid jet or the first laser beam and one of the second fluid jet or the second laser beam are both used to zigzag singulate each die of the plurality of die.
14. The process of claim 13 , further comprising coupling a plurality of die support structures to the plurality of die.
15. The process of claim 14 , wherein the plurality of die support structures and the plurality of die form a plurality of semiconductor packages.
16. The process of claim 13 , wherein zigzag singulating further comprises intersecting one of the second fluid jet or the second laser beam with one of the first fluid jet or the first laser beam at a beginning of singulating and at an end of singulating each die of the plurality of die.
17. The process of claim 13 , wherein the first fluid jet comprises a plurality of particles.