Transversely-excited film bulk acoustic filter using pitch to establish frequency separation between resonators
Acoustic filters are disclosed. An acoustic filter device includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces and a thickness ts, the back surface attached to the surface of the substrate except for portions of the piezoelectric plate forming a plurality of diaphragms that span respective cavities in the substrate. A conductor pattern is formed on the front surface of the piezoelectric plate, the conductor pattern comprising a plurality of interdigital transducers (IDTs) of a plurality of acoustic resonators, interleaved fingers of each IDT of the plurality of IDTs disposed on a respective diaphragm of the plurality of diaphragms. The interleaved fingers of all of the plurality of IDTs are substantially aluminum with a common thickness tm, where 0.12 ts≤tm≤0.32 ts.
1. An acoustic filter device comprising:
a substrate having a surface;
at least one piezoelectric layer having front and back surfaces and a thickness ts, the at least one piezoelectric layer attached to the surface of the substrate directly or via one or more intermediate layers and having portions that form a plurality of diaphragms that are over respective cavities;
a conductor pattern at the at least one piezoelectric layer and comprising a plurality of interdigital transducers (IDTs) of a plurality of acoustic resonators, with interleaved fingers of each IDT of the plurality of IDTs disposed on a respective diaphragm of the plurality of diaphragms; and
one or more dielectric layers deposited over all of the plurality of diaphragms, wherein a total deposited thickness of the one or more dielectric layers over each of the plurality of diaphragm is a same thickness for all of the plurality of acoustic resonators.
2. The acoustic filter device of claim 1 , wherein the one or more dielectric layers comprises a passivation/tuning layer.
3. The acoustic filter device of claim 1 , wherein the one or more dielectric layers consists of a passivation/tuning layer.
4. The acoustic filter device of claim 1 , wherein the interleaved fingers of all of the plurality of IDTs are aluminum with a common thickness tm, where 0.12 ts≤tm≤0.32 ts.
5. The acoustic filter device of claim 4 , wherein at least one IDT of the plurality of IDTs has a respective pitch p within one of following ranges: 2.8 ts to 4.0 ts, 5.0 ts to 7.2 ts, and 8.2 ts to 10.6 ts.
6. The acoustic filter device of claim 1 , wherein each diaphragm of the plurality of diaphragms is contiguous with the at least one piezoelectric layer around at least 50% of a perimeter of the respective cavity.
7. The acoustic filter device of claim 1 , wherein the at least one piezoelectric layer and the plurality of IDTs are configured such that respective radio frequency signals applied to the plurality of IDTs excite respective primary shear acoustic modes in the respective diaphragms.
8. The acoustic filter device of claim 7 , wherein directions of acoustic energy flow of the respective primary shear acoustic modes are substantially orthogonal to the front and back surfaces of the at least one piezoelectric layer.
9. An acoustic filter device comprising:
a substrate having a surface;
at least one piezoelectric layer having front and back surfaces and a thickness ts, the at least one piezoelectric layer attached to the surface of the substrate directly or via one or more intermediate layers and having portions that form a plurality of diaphragms that are over respective cavities; and
a conductor pattern at the at least one piezoelectric layer, the conductor pattern comprising a plurality of interdigital transducers (IDTs) of a plurality of acoustic resonators, with interleaved fingers of each IDT of the plurality of IDTs disposed on a respective diaphragm of the plurality of diaphragms,
wherein the interleaved fingers of all of the plurality of IDTs are substantially aluminum with a common thickness tm, where 0.12 ts≤tm≤0.32 ts, and
wherein the at least one piezoelectric layer and the plurality of IDTs are configured such that respective radio frequency signals applied to the plurality of IDTs excite respective primary shear acoustic modes in the respective diaphragms.
10. The acoustic filter device of claim 9 , wherein directions of acoustic energy flow of the respective primary shear acoustic modes are substantially orthogonal to the front and back surfaces of the at least one piezoelectric layer.
11. The acoustic filter device of claim 9 , further comprising a passivation/tuning layer deposited over all of the IDTs and the diaphragms.
12. The acoustic filter device of claim 11 , wherein a thickness of the passivation/tuning layer is the same over all of the IDTs and the diaphragms.
13. The acoustic filter device of claim 9 , wherein at least one IDT of the plurality of IDTs has a respective pitch p within one of following ranges: 2.8 ts to 4.0 ts, 5.0 ts to 7.2 ts, and 8.2 ts to 10.6 ts.
14. The acoustic filter device of claim 9 , wherein each diaphragm of the plurality of diaphragms is contiguous with the at least one piezoelectric layer around at least 50% of a perimeter of the respective cavity.
15. The acoustic filter device of claim 9 , wherein every IDT of the plurality of IDTs has a respective pitch p within one of following ranges: 2.8 ts to 4.0 ts, 5.0 ts to 7.2 ts, and 8.2 ts to 10.6 ts.
16. An acoustic filter device comprising:
a substrate;
at least one piezoelectric layer having a thickness ts and attached to the substrate directly or via one or more intermediate layers, the at least one piezoelectric layer including a plurality of diaphragms that span a plurality of cavities, respectively;
a conductor pattern comprising a plurality of interdigital transducers (IDTs) of a plurality of acoustic resonators, the plurality of IDTs each having interleaved fingers that are disposed on a respective diaphragm of the plurality of diaphragms; and
one or more dielectric layers deposited over a surface of each of the plurality of diaphragms,
wherein a total deposited thickness of the one or more dielectric layers over each of the plurality of diaphragm is a same thickness for all of the plurality of acoustic resonators.
17. The acoustic filter device of claim 16 , wherein the one or more dielectric layers are deposited over the plurality of IDTs of each of the plurality of acoustic resonators.
18. The acoustic filter device of claim 16 , wherein the at least one piezoelectric layer and the plurality of IDTs are configured such that respective radio frequency signals applied to the plurality of IDTs excite respective primary shear acoustic modes in each of the plurality of diaphragms, respectively.
19. The acoustic filter device of claim 16 , wherein the interleaved fingers of all of the plurality of IDTs are aluminum with a common thickness tm, where 0.12 ts≤tm≤0.32 ts.
20. The acoustic filter device of claim 19 , wherein at least one IDT of the plurality of IDTs has a respective pitch p within one of following ranges: 2.8 ts to 4.0 ts, 5.0 ts to 7.2 ts, and 8.2 ts to 10.6 ts.