Air gap formation between gate spacer and epitaxy structure
A semiconductor device includes a gate stack, an epitaxy structure, a first spacer, a second spacer, and a dielectric residue. The gate stack is over a substrate. The epitaxy structure is formed raised above the substrate. The first spacer is on a sidewall of the gate stack. The first spacer and the epitaxy structure define an air gap therebetween. The second spacer seals the air gap between the first spacer and the epitaxy structure. The dielectric residue is in the air gap and has an upper portion and a lower portion under the upper portion. The upper portion of the dielectric residue has higher etch resistance to phosphoric acid than that of the lower portion of the dielectric residue.
1. A semiconductor device, comprising:
a gate stack over a substrate;
an epitaxy structure raised above the substrate;
a first spacer on a sidewall of the gate stack, the first spacer and the epitaxy structure defining an air gap therebetween;
a second spacer sealing the air gap between the first spacer and the epitaxy structure; and
a dielectric residue in the air gap and having an upper portion and a lower portion under the upper portion, the upper portion of the dielectric residue having higher etch resistance to phosphoric acid than that of the lower portion of the dielectric residue.
2. The semiconductor device of claim 1 , wherein the upper portion of the dielectric residue has a higher silicon-to-nitrogen atomic ratio than that of the lower portion of the dielectric residue.
3. The semiconductor device of claim 1 , wherein the upper portion of the dielectric residue has a higher density than that of the lower portion of the dielectric residue.
4. The semiconductor device of claim 1 , wherein the upper portion of the dielectric residue has a higher impurity concentration than that of the lower portion of the dielectric residue.
5. The semiconductor device of claim 1 , wherein the upper portion of the dielectric residue has a gradient dopant concentration increasing as a distance from the lower portion of the dielectric residue increases.
6. The semiconductor device of claim 1 , wherein the lower portion of the dielectric residue has a gradient dopant concentration decreasing as a distance from the upper portion of the dielectric residue increases.
7. The semiconductor device of claim 1 , wherein the dielectric residue has a gradient silicon-to-nitrogen atomic ratio.
8. The semiconductor device of claim 1 , wherein the dielectric residue has a gradient density.
9. The semiconductor device of claim 1 , wherein the dielectric residue is spaced apart from the second spacer by the air gap.
10. The semiconductor device of claim 1 , wherein the dielectric residue is in contact with the epitaxy structure.
11. A device, comprising:
a fin structure extending from a substrate;
a gate structure extending across the fin structure;
a first source/drain epitaxy structure and a second source/drain epitaxy structure on opposite sides of the gate structure, respectively;
a first spacer layer spacing the first source/drain epitaxy structure apart from the gate structure, the first spacer layer and an inner sidewall of the first source/drain epitaxy structure defining a first air gap therebetween;
a second spacer layer over the first source/drain epitaxy structure and sealing the first air gap; and
a first dielectric residue in the first air gap, wherein the first dielectric residue forms an interface with a lower portion of the inner sidewall of the first source/drain epitaxy structure, and the interface is more linear than an upper portion of the inner sidewall of the first source/drain epitaxy structure.
12. The device of claim 11 , wherein the upper portion of the inner sidewall of the first source/drain epitaxy structure is concave.
13. The device of claim 11 , wherein the upper portion of the inner sidewall of the first source/drain epitaxy structure is free from coverage by the first dielectric residue.
14. The device of claim 11 , further comprising:
a third spacer layer spacing the second source/drain epitaxy structure apart from the gate structure, the third spacer layer and an inner sidewall of the second source/drain epitaxy structure defining a second air gap therebetween;
a fourth spacer layer over the second source/drain epitaxy structure and sealing the second air gap; and
a second dielectric residue in the second air gap, wherein the second dielectric residue forms an interface with a lower portion of the inner sidewall of the second source/drain epitaxy structure, and the interface is more linear than an upper portion of the inner sidewall of the second source/drain epitaxy structure.
15. The device of claim 14 , wherein the first dielectric residue is formed of a same material as the second dielectric residue.
16. The device of claim 14 , wherein the first and second dielectric residues have a gradient silicon-to-nitrogen atomic ratio and a gradient density.
17. The device of claim 11 , wherein the first dielectric residue has a lateral width decreasing as the first dielectric residue extends upwards.
18. A device, comprising:
an n-type field-effect transistor (NFET) on a substrate, the NFET comprising a first n-type epitaxy structure, a second n-type epitaxy structure, and an NFET gate structure laterally between the first and second n-type epitaxy structures, wherein the NFET gate structure is separated from an inner sidewall of the first n-type epitaxy structure at least by a first unfilled gap; and
a p-type field-effect transistor (PFET) on the substrate, the PFET comprising a first p-type epitaxy structure, a second p-type epitaxy structure, and a PFET gate structure laterally between the first and second p-type epitaxy structures, wherein the PFET gate structure is separated from an inner sidewall of the first p-type epitaxy structure at least by a second unfilled gap,
wherein the inner sidewall of the first n-type epitaxy structure has a first residue-free region exposed in the first unfilled gap and a first residue-containing region below the first residue-free region, the inner sidewall of the first p-type epitaxy structure has a second residue-free region exposed in the second unfilled gap and a second residue-containing region below the second residue-free region, and the second residue-free region of the inner sidewall of the first p-type epitaxy structure is more linear than the first residue-free region of the inner sidewall of the first n-type epitaxy structure.
19. The device of claim 18 , wherein the first residue-free region of the inner sidewall of the first n-type epitaxy structure curves inward.
20. The device of claim 18 , wherein the first residue-containing region of the inner sidewall of the first n-type epitaxy structure is more linear than the first residue-free region of the inner sidewall of the first n-type epitaxy structure.