IP Library › Granted Patent US 11,476,418
Granted Patent B2
US 11,476,418 · App. 17/114,605 · Granted Oct 18, 2022

Phase change memory cell with a projection liner

Inventors: Injo Ok (Loudonville, NY); Ruqiang Bao (Niskayuna, NY); Andrew Herbert Simon (Fishkill, NY); Kevin W. Brew (Niskayuna, NY); Nicole Saulnier (Slingerlands, NY); Iqbal Rashid Saraf (Glenmont, NY); Prasad Bhosale (Albany, NY)
Assignee: International Business Machines Corporation
H01L45/126H01L45/06H01L45/1233
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Quick Facts
Patent No.
US 11,476,418
App. No.
17/114,605
Granted
Oct 18, 2022
Kind
B2
Abstract

A semiconductor structure may include a heater surrounded by a second dielectric layer, a projection liner on top of the second dielectric layer, and a phase change material layer above the projection liner. A top surface of the projection liner may be substantially flush with a top surface of the heater. The projection liner may separate the phase change material layer from the second dielectric layer. The projection liner may provide a parallel conduction path in the crystalline phase and the amorphous phase of the phase change material layer. The semiconductor structure may include a bottom electrode below and in electrical contact with the heater and a top electrode above and in electrical contact with the phase change material layer.

Claims (36)

1. A structure comprising:

a heater surrounded by a second dielectric layer;

a projection liner on top of the second dielectric layer, wherein a top surface of the projection liner is substantially flush with a top surface of the heater; and

a phase change material layer above the projection liner, the projection liner separates the phase change material layer from the second dielectric layer.

2. The structure of claim 1 , further comprising:

a bottom electrode below and in electrical contact with the heater; and

a top electrode above and in electrical contact with the phase change material layer.

3. The structure of claim 2 , further comprising:

a mask layer above and in direct contact with the top electrode;

a top electrode contact above and in electrical contact with the top electrode; and

a bottom electrode contact below and in electrical contact with the bottom electrode.

4. The structure of claim 1 , wherein the phase change material layer includes a crystalline phase and an amorphous phase, wherein the amorphous phase is directly above the heater.

5. The structure of claim 4 , wherein the projection liner provides a parallel conduction path in the crystalline phase and the amorphous phase of the phase change material layer.

6. The structure of claim 4 , wherein the projection liner laterally extends beyond the amorphous phase of the phase change material layer.

7. The structure of claim 1 , wherein the heater comprises:

an outer layer;

a middle layer, wherein the middle layer is between the outer layer and an inner layer; and

the inner layer, wherein the inner layer is surrounded by the middle layer.

8. A structure comprising:

a heater within a second dielectric layer, wherein a top portion of the heater vertically extends above the second dielectric layer;

a projection liner on top of the second dielectric layer, the projection liner is on top and in direct contact with the top portion of the heater that vertically extends above the second dielectric layer; and

a phase change material layer above the projection liner, the projection liner separates the phase change material layer from the heater and the second dielectric layer.

9. The structure of claim 8 , further comprising:

a bottom electrode below and in electrical contact with the heater; and

a top electrode above and in electrical contact with the phase change material layer.

10. The structure of claim 9 , further comprising:

a mask layer above and in direct contact with the top electrode;

a top electrode contact above and in electrical contact with the top electrode; and

a bottom electrode contact below and in electrical contact with the bottom electrode.

11. The structure of claim 8 , wherein the phase change material layer includes a crystalline phase and an amorphous phase, wherein the amorphous phase is directly above the heater.

12. The structure of claim 11 , wherein the projection liner provides a parallel conduction path in the crystalline phase and the amorphous phase of the phase change material layer.

13. The structure of claim 11 , wherein the projection liner laterally extends beyond the amorphous phase of the phase change material layer.

14. The structure of claim 8 , wherein the heater comprises:

an outer layer;

a middle layer, wherein the middle layer is between the outer layer and an inner layer; and

the inner layer, wherein the inner layer is surrounded by the middle layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 8, 2020
From: OK, INJO; BAO, RUQIANG; SIMON, ANDREW HERBERT; BREW, KEVIN W.; SAULNIER, NICOLE; SARAF, IQBAL RASHID; BHOSALE, PRASAD
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 054572/0177 →
Continuity (1)
Related Publication 20220181547A1 · Jun 9, 2022
Cited By (1)
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