Piezo-actuated MEMS resonator

1. An integrated circuit comprising:

a microelectromechanical system (MEMS) resonator on the integrated circuit;

the MEMS resonator having a degenerately doped single-crystal silicon (SCS) layer, a piezoelectric material layer disposed on the degenerately doped SCS layer, and an electrically conductive layer disposed on the piezoelectric material layer opposite the degenerately doped SCS layer;

wherein the integrated circuit is to provide an output dependent on a resonance mode of the MEMS resonator; and

wherein the piezoelectric material layer has a second order temperature coefficient of frequency (TCF) and the degenerately doped SCS layer is configured to have a dopant concentration and crystal orientation relative to an axis of vibration of the resonance mode such that the degenerately doped SCS layer has a second order TCF that is opposite in sign to the second order TCF of the piezoelectric material layer.

2. The integrated circuit of claim 1 wherein:

the integrated circuit further comprises circuitry to sense a temperature; and

the integrated circuit further comprises circuitry to receive a signal from the MEMS resonator dependent on a resonant frequency of the MEMS resonator and to generate the output dependent on the resonant frequency and the sensed temperature, such that the output exhibits a reduced temperature dependent variation relative to temperature-dependent variation of the resonant frequency.

3. The integrated circuit of claim 2 wherein the circuitry to receive the signal and to generate the output comprises programmable storage circuitry, the programmable storage circuitry to store temperature-dependent correction information, and wherein the circuitry to receive the signal and to generate the output is to retrieve temperature correction parameters dependent on the sensed temperature and is to generate the output dependent on the retrieved temperature correction parameters.

4. The integrated circuit of claim 1 wherein the piezoelectric material layer comprises aluminum nitride.

5. The integrated circuit of claim 1 wherein the integrated circuit further comprises sustaining circuitry for the MEMS resonator and wherein the output comprises an oscillation signal.

6. The integrated circuit of claim 1 wherein the integrated circuit further comprises circuitry to implement a phase-locked loop and wherein the output comprises an oscillation signal generated from the phase-locked loop.

7. The integrated circuit of claim 1 wherein the integrated circuit further comprises circuitry to generate heat in a controlled manner so as to raise the temperature.

8. The integrated circuit of claim 1 wherein:

the crystal orientation has an associated crystalline axis; and

the MEMS resonator is structured such that the associated crystalline axis lies within a predetermined tolerance range about a nonzero angle relative to the axis of vibration.

9. The integrated circuit of claim 1 wherein the electrically conductive layer comprises a metal electrode.

10. The integrated circuit of claim 1 wherein the electrically conductive layer comprises doped crystal silicon.

11. The integrated circuit of claim 1 wherein the electrically conductive layer comprises doped polycrystal silicon.

12. The integrated circuit of claim 1 wherein a ratio of a thickness of the degenerately doped SCS layer to a thickness of the piezoelectric material layer is selected such that a first order TCF of the degenerately doped SCS layer is opposite in sign to a first order TCF of the piezoelectric material layer and such that an overall first order TCF of the MEMS resonator lies within a predetermined tolerance range about zero.

13. A method of manufacturing an integrated circuit, the method comprising:

providing a microelectromechanical system (MEMS) resonator on the integrated circuit;

wherein providing comprises forming the MEMS resonator to have a degenerately doped single-crystal silicon (SCS) layer, a piezoelectric material layer disposed on the degenerately doped SCS layer, and an electrically conductive layer disposed on the piezoelectric material layer opposite the degenerately doped SCS layer, wherein the integrated circuit is to provide an output dependent on a resonance mode of the MEMS resonator; and

wherein forming the MEMS resonator comprises configuring the degenerately doped SCS layer to have a dopant concentration and crystal orientation relative to an axis of vibration of the resonance mode such that the degenerately doped SCS layer has a second order temperature coefficient of frequency (TCF) that is opposite in sign to the second order TCF of the piezoelectric material layer.

14. The method of claim 11 wherein:

the method further comprises providing a temperature sensor on-board the integrated circuit; and

the method further comprises providing circuitry on-board the integrated circuit that is to receive a signal from the MEMS resonator that is dependent on a resonant frequency of the MEMS resonator and that is to generate the output dependent on the resonant frequency and the sensed temperature, such that the output exhibits a reduced temperature dependent variation relative to temperature-dependent variation of the resonant frequency.

15. The method of claim 14 wherein the method further comprises providing programmable storage circuitry and programming the programmable storage circuitry to have temperature-dependent correction information for the MEMS resonator, and wherein the circuitry on-board the integrated circuit is to generate the output dependent on processing of the signal, dependent on temperature correction parameters retrieved from the programmable storage circuitry dependent on the sensed temperature.

16. The method of claim 13 wherein forming the piezoelectric material layer comprises providing aluminum nitride as a primary material of the piezoelectric material layer.

17. The method of claim 13 wherein the method further comprises providing on-board the integrated circuit sustaining circuitry for the MEMS resonator and wherein the output comprises an oscillation signal.

18. The method of claim 13 wherein the method further comprises providing on-board the integrated circuit circuitry to implement a phase-locked loop and wherein the output comprises an oscillation signal generated from the phase-locked loop.

19. The method of claim 13 wherein the method further comprises providing on-board the integrated circuit circuitry to controllably generate heat so as to raise the temperature.

20. The method of claim 13 wherein forming the MEMS resonator comprises:

forming the crystal orientation to have an associated crystalline axis, in a manner such that the associated crystalline axis lies within a predetermined tolerance range about a nonzero angle relative to the axis of vibration.

21. The method of claim 13 wherein forming the MEMS resonator comprises providing a metal electrode as the electrically conductive layer.

22. The method of claim 13 wherein forming the MEMS resonator comprises providing doped crystal silicon as the electrically conductive layer.

23. The method of claim 13 wherein forming the MEMS resonator comprises providing doped polycrystal silicon as the electrically conductive layer.

24. The method of claim 13 wherein forming the MEMS resonator comprises providing a MEMS resonator having a ratio of a thickness of the degenerately doped SCS layer to a thickness of the piezoelectric material layer such that a first order TCF of the degenerately doped SCS layer is opposite in sign to a first order TCF of the piezoelectric material layer and such that an overall first order TCF of the MEMS resonator lies within a predetermined tolerance range about zero.

25. An integrated circuit comprising:

a microelectromechanical system (MEMS) resonator on the integrated circuit;

the MEMS resonator having a degenerately doped single-crystal silicon (SCS) layer, a piezoelectric material layer disposed on the degenerately doped SCS layer, and an electrically conductive polycrystal silicon layer disposed on the piezoelectric material layer opposite the degenerately doped SCS layer;

circuitry to sense a temperature;

circuitry to receive a signal from the MEMS resonator dependent on a resonant frequency of the MEMS resonator and to generate an output dependent on the resonant frequency and the sensed temperature, in a manner such that the output exhibits a reduced temperature dependent variation relative to temperature-dependent variation of the resonant frequency;

wherein the piezoelectric material layer has a second order temperature coefficient of frequency (TCF) and the degenerately doped SCS layer is configured to have a dopant concentration and crystal orientation relative to an axis of vibration of the resonance mode such that the degenerately doped SCS layer has a second order TCF that is opposite in sign to the second order TCF of the piezoelectric material layer; and

wherein a ratio of a thickness of the degenerately doped SCS layer to a thickness of the piezoelectric material layer is selected such that a first order TCF of the degenerately doped SCS layer is opposite in sign to a first order TCF of the piezoelectric material layer and such that an overall first order TCF of the MEMS resonator lies within a predetermined tolerance range about zero.