Hybrid manufacturing for integrating photonic and electronic components
Microelectronic assemblies fabricated using hybrid manufacturing for integrating photonic and electronic components, as well as related devices and methods, are disclosed herein. As used herein, “hybrid manufacturing” refers to fabricating a microelectronic assembly by bonding at least two IC structures fabricated using different manufacturers, materials, or manufacturing techniques. Before bonding, at least one IC structure may include photonic components such as optical waveguides, electro-optic modulators, and monolithically integrated lenses, and at least one may include electronic components such as electrically conductive interconnects, transistors, and resistors. One or more additional electronic and/or photonic components may be provided in one or more of these IC structures after bonding. For example, an interconnect implemented as an electrically conductive via or a waveguide implemented as a dielectric via may be provided after bonding to extend through one or more of the bonded IC structures.
1. A microelectronic assembly, comprising:
a first integrated circuit (IC) structure, comprising first electrically conductive interconnects and a first optical waveguide;
a second IC structure, comprising second electrically conductive interconnects and a second optical waveguide, the second IC structure attached to the first IC structure; and
a bonding material in at least portions of a bonding interface where the second IC structure is attached to the first IC structure, the bonding material including silicon, nitrogen, and carbon,
wherein at least a portion of the first optical waveguide overlaps, and is in contact with, at least a portion of the second optical waveguide.
2. The microelectronic assembly according to claim 1 , further comprising at least one of:
a first photonic component, integrated in the first IC structure and coupled to the first optical waveguide, and
a second photonic component, integrated in the second IC structure and coupled to the second optical waveguide.
3. The microelectronic assembly according to claim 2 , wherein at least one of the first photonic component and the second photonic component is an electro-optic modulator.
4. The microelectronic assembly according to claim 1 , wherein:
at least one of the first electrically conductive interconnects includes a first liner and a first electrically conductive fill material,
at least one of the second electrically conductive interconnects includes a second liner and a second electrically conductive fill material, and
a material composition of the first liner is different from a material composition of the second liner.
5. The microelectronic assembly according to claim 4 , wherein a material composition of the first electrically conductive fill material is different from a material composition of the second electrically conductive fill material.
6. The microelectronic assembly according to claim 1 , wherein:
at least one of the first electrically conductive interconnects includes a first electrically conductive fill material,
at least one of the second electrically conductive interconnects includes a second electrically conductive fill material, and
at least a portion of the first electrically conductive fill material is electrically coupled with at least a portion of the second electrically conductive fill material.
7. The microelectronic assembly according to claim 1 , wherein:
in a plane that is substantially perpendicular to a plane of the bonding material, an individual one of a cross-section of at least one of the first electrically conductive interconnects and a cross-section of at least one of the second electrically conductive interconnects includes a first side and a second side opposite the first side, wherein the first side is shorter than the second side,
for the cross-section of the at least one of the first electrically conductive interconnects, the second side is closer to the bonding material than the first side, and
for the cross-section of the at least one of the second electrically conductive interconnects, the second side is closer to the bonding material than the first side.
8. The microelectronic assembly according to claim 1 , wherein:
in a plane that is substantially perpendicular to a plane of the bonding material, an individual one of a cross-section of at least one of the first electrically conductive interconnects and a cross-section of at least one of the second electrically conductive interconnects includes a first side and a second side opposite the first side, wherein the first side is shorter than the second side,
for the cross-section of the at least one of the first electrically conductive interconnects, the second side is closer to the bonding material than the first side, and
for the cross-section of the at least one of the second electrically conductive interconnects, the first side is closer to the bonding material than the second side.
9. The microelectronic assembly according to claim 1 , wherein:
in a plane that is substantially perpendicular to a plane of the bonding material, an individual one of a cross-section of at least one of the first electrically conductive interconnects and a cross-section of at least one of the second electrically conductive interconnects includes a first side and a second side opposite the first side, wherein the first side is shorter than the second side,
for the cross-section of the at least one of the first electrically conductive interconnects, the first side is closer to the bonding material than the second side, and
for the cross-section of the at least one of the second electrically conductive interconnects, the first side is closer to the bonding material than the second side.
10. The microelectronic assembly according to claim 1 , wherein:
an individual one of the first IC structure and the second IC structure has a first face and an opposing second face,
the second IC structure is attached to the first IC structure by having the first face of the second IC structure being attached to the first face of the first IC structure, and
the microelectronic assembly further includes an electrically conductive via extending from the second face of the second IC structure to the first face of the second IC structure, through the bonding material, and into the first IC structure.
11. The microelectronic assembly according to claim 10 , wherein the electrically conductive via extends to the second face of the first IC structure.
12. The microelectronic assembly according to claim 1 , wherein:
an individual one of the first IC structure and the second IC structure has a first face and an opposing second face,
the second IC structure is attached to the first IC structure by having the first face of the second IC structure being attached to the first face of the first IC structure, and
the microelectronic assembly further includes a third optical waveguide extending from the second face of the second IC structure to the first face of the second IC structure, through the bonding material, and into the first IC structure.
13. The microelectronic assembly according to claim 12 , wherein the third optical waveguide extends to the second face of the first IC structure.
14. The microelectronic assembly according to claim 13 , further comprising a photonic component over the second face of the first IC structure and optically coupled to the third optical waveguide.
15. The microelectronic assembly according to claim 12 , wherein:
the first IC structure includes one or more first photonic components in the first IC structure, the first optical waveguide being one of the one or more first photonic components,
the second IC structure includes one or more second photonic components in the second IC structure, the second optical waveguide being one of the one or more second photonic components, and
the third optical waveguide is optically coupled to at least one of the one or more first photonic components or at least one of the one or more second photonic components.
16. A microelectronic assembly, comprising:
a first integrated circuit (IC) structure, comprising at least a first electronic component and a first photonic component in the first IC structure;
a second IC structure, comprising at least a second photonic component in the second IC structure; and
an electrically conductive via,
wherein:
each of the first IC structure and the second IC structure has a first face and an opposing second face,
the first face of the second IC structure is being bonded to the first face of the first IC structure,
the electrically conductive via extends from the second face of the second IC structure to the first face of the second IC structure, through a bonding interface between the second IC structure and the first IC structure, and into the first IC structure, and is electrically coupled to the first electronic component, and
the first photonic component is optically coupled to the second photonic component.
17. The microelectronic assembly according to claim 16 , wherein:
the microelectronic assembly further includes an optical waveguide extending from the second face of the second IC structure to the first face of the second IC structure, through the bonding interface between the second IC structure and the first IC structure, and into the first IC structure, and
the optical waveguide is optically coupled to at least one of the first photonic component and the second photonic component.
18. A microelectronic assembly, comprising:
a first integrated circuit (IC) structure, comprising a first photonic component and a first electronic component;
a second IC structure, comprising a second photonic component and a second electronic component, wherein the first electronic component is electrically coupled to the second electronic component; and
an optical waveguide, wherein:
each of the first IC structure and the second IC structure has a first face and an opposing second face,
the first face of the second IC structure is attached to the first face of the first IC structure, and
the optical waveguide extends from the second face of the second IC structure to the first face of the second IC structure, through a bonding interface between the second IC structure and the first IC structure, and into the first IC structure, and is optically coupled to the first photonic component and the second photonic component.
19. The microelectronic assembly according to claim 1 , wherein an atomic percentage of each of silicon, nitrogen, and carbon within the bonding material is at least about 1%.
20. The microelectronic assembly according to claim 16 , wherein:
the microelectronic assembly further includes an optical waveguide extending from the second face of the first IC structure to the first face of the first IC structure, through a bonding interface between the second IC structure and the first IC structure, and into the second IC structure, and
the optical waveguide is optically coupled to at least one of the first photonic component and the second photonic component.
21. The microelectronic assembly according to claim 18 , at least one of the first photonic component and the second photonic component includes a modulator or an oscillator.