Processed stacked dies
Representative implementations of techniques and methods include processing singulated dies in preparation for bonding. A plurality of semiconductor die components may be singulated from a wafer component, the semiconductor die components each having a substantially planar surface. Particles and shards of material may be removed from edges of the plurality of semiconductor die component. Additionally, one or more of the plurality of semiconductor die components may be bonded to a prepared bonding surface, via the substantially planar surface.
1. A microelectronic system, comprising:
a first microelectronic component comprising a first semiconductor layer and a first dielectric layer having a first substantially planar surface; and
a die comprising a second semiconductor layer and a second dielectric layer having a second substantially planar surface, wherein a portion of the second dielectric layer is recessed at a periphery of the second dielectric layer, such that an area of the second substantially planar surface of the second dielectric layer is less than an area of a cross-section of the widest portion of the die; and
wherein the second dielectric layer is directly bonded to the first dielectric layer without adhesive.
2. The microelectronic system of claim 1 , wherein the second dielectric layer creates an undercut between the first microelectronic component and the die.
3. The microelectronic system of claim 2 , wherein the undercut extends into the second semiconductor layer such that the second semiconductor layer is exposed at a periphery of the die.
4. The microelectronic system of claim 1 , wherein the second dielectric layer includes a substantially planar oxide layer, and wherein at least a portion of the substantially planar oxide layer at one or more edges of the second dielectric layer is recessed or removed.
5. The microelectronic system of claim 1 , wherein the second semiconductor layer has an undercut comprising a recess at a periphery of the second semiconductor layer corresponding to the recessed portion of the second dielectric layer.
6. The microelectronic system of claim 1 , further comprising an undercut at a periphery of the first semiconductor layer, an undercut at a periphery of the second semiconductor layer, or an undercut at a periphery of the first semiconductor layer and an undercut at a periphery of the second semiconductor layer.
7. The microelectronic system of claim 1 , wherein the first microelectronic component or the die comprises a direct band gap or an indirect band gap semiconductor.
8. The microelectronic system of claim 1 , wherein a portion of the first dielectric layer is recessed at a periphery of the first dielectric layer, such that an area of the surface of the first dielectric layer is less than an area of a cross-section of the widest portion of the first microelectronic component.
9. The microelectronic system of claim 1 , wherein the first microelectronic component comprises a wafer.
10. The microelectronic system of claim 1 , wherein the second dielectric layer comprises a sloped profile.
11. The microelectronic system of claim 10 , wherein the sloped profile extends into the second semiconductor layer.
12. The microelectronic system of claim 10 , wherein the sloped profile extends substantially about an entire perimeter of the second dielectric layer.
13. The microelectronic system of claim 1 , wherein the recessed portion of the second dielectric layer is filled with a dielectric material.
14. The microelectronic system of claim 13 , wherein the dielectric material comprises silicon oxide.
15. The microelectronic system of claim 1 , wherein the recessed portion of the second dielectric layer is filled with an encapsulant.
16. The microelectronic system of claim 1 , wherein the die consists of the second semiconductor layer and the second dielectric layer.
17. A microelectronic system, comprising:
a first die component comprising a first dielectric layer over a first base semiconductor layer, the first dielectric layer having a substantially planar surface;
a second microelectronic component comprising a second dielectric layer and a second base semiconductor layer,
wherein the second dielectric layer is directly bonded without an adhesive to the first dielectric layer; and
wherein a periphery of the first die component and a periphery of the second base semiconductor layer are recessed such that an area of the footprint of the first die component and an area of a footprint of the second base semiconductor layer are both less than at least one of an area of the first dielectric layer or an area of the second dielectric layer.
18. The microelectronic system of claim 17 , wherein an area of the first dielectric layer is less than an area of the first base semiconductor layer.
19. The microelectronic system of claim 17 , wherein at least a portion of the first dielectric layer is recessed at the periphery of the first die component.
20. The microelectronic system of claim 17 , wherein at least a portion of the first base semiconductor layer is recessed at the periphery of the first die component.
21. The microelectronic system of claim 17 , wherein a periphery of the second microelectronic component is recessed at a bond interface with the first die component.
22. A microelectronic assembly comprising:
a semiconductor die comprising at least a first planar dielectric layer having a recess at a periphery of the semiconductor die; and
a microelectronic component comprising a second planar dielectric layer,
wherein the first dielectric layer is directly bonded to the second dielectric layer, and
wherein the recess comprises a sloped profile.
23. The microelectronic assembly of claim 22 , wherein the microelectronic component has an undercut comprising a recess at a periphery of the microelectronic component.
24. The microelectronic assembly of claim 22 , wherein the first dielectric layer comprises an oxide layer as a bonding surface with the microelectronic component, and wherein one or more edges of the oxide layer is recessed or removed and exposes a base layer beneath the oxide layer.
25. The microelectronic assembly of claim 22 , wherein at least one of the semiconductor die and the microelectronic component comprises a direct band gap or an indirect band gap semiconductor.
26. The microelectronic assembly of claim 22 , wherein at least one of the semiconductor die and the microelectronic component further comprises a non-semiconductor material.
27. The microelectronic assembly of claim 22 , wherein the semiconductor die and microelectronic component each comprise a microelectronic die.
28. The microelectronic assembly of claim 22 , wherein the second planar dielectric layer has a recess at a periphery of the microelectronic component.
29. The microelectronic assembly of claim 22 , wherein the sloped profile extends into a semiconductor layer of the semiconductor die.