Semiconductor package including alignment material and method for manufacturing semiconductor package

1. A semiconductor package, comprising:

a first semiconductor device having a first bonding layer, wherein the first bonding layer comprises a first bond pad contacting an organic dielectric material;

a second semiconductor device having a second bonding layer, wherein the second bonding layer comprises a second bond pad contacting the organic dielectric material; and

an alignment material between the first bonding layer and the second bonding layer.

2. The semiconductor package of claim 1 , wherein the alignment material surrounds a plurality of the first bond pads.

3. The semiconductor package of claim 1 , wherein the organic dielectric material comprises a notch, and the alignment material is filled in the notch.

4. The semiconductor package of claim 1 , wherein the alignment material comprises a soldering material.

5. A semiconductor package, comprising:

a first semiconductor device having a first bonding layer, the first bonding layer comprising a first bond pad contacting a dielectric material;

a second semiconductor device having a second bonding layer, the second bonding layer comprising a second bond pad contacting the dielectric material, the first semiconductor device being bonded to the second semiconductor device through the first bond pad, the second bond pad, and the dielectric material; and

a first area defined by the first bond pad and the second bond pad,

wherein the first area comprises a recess of the first bond pad, the second bond pad, or the combination thereof, and the dielectric material conforms to a morphology of the first area.

6. The semiconductor package of claim 5 , wherein a coefficient of thermal expansion (CTE) of the dielectric material is greater than a CTE of the first bond pad or a CTE of the second bond pad.

7. The semiconductor package of claim 5 , wherein the first bond pad and the second bond pad are surrounded by the dielectric material.

8. The semiconductor package of claim 5 , wherein a pitch of the plurality of first bond pads is in a range of from about 10 μm to about 30 μm.

9. The semiconductor package of claim 5 , further comprising an alignment material between the first bonding layer and the second bonding layer, wherein the alignment material surrounds a plurality of the first bond pads and a plurality of the second bond pads.

10. The semiconductor package of claim 9 , wherein the alignment material comprises a soldering material.

11. The semiconductor package of claim 5 , further comprising a plated material between the first bonding layer and the second bonding layer, the plated material contacting a sidewall of the first bond pad, a sidewall of the second bond pad, and the dielectric layer.

12. The semiconductor package of claim 5 , wherein the first area is defined by a first surface and a second surface angled with the first surface, and an angle between the first surface and the second surface of the first area is equal to or less than about 90°.

13. A method for manufacturing a semiconductor package, comprising:

providing a first semiconductor device having a first bonding layer, the first bonding layer comprising a first bond pad contacting a dielectric material and protruding from a top surface of the dielectric material;

providing a second semiconductor device having a second bonding layer, the second bonding layer comprising a second bond pad;

aligning the first bond pad and the second bond pad, comprising self-aligning the first bond pad and the second bond pad through soldering between the first bonding layer and the second bonding layer; and

face-to-face bonding the first bond pad to the second bond pad by performing a thermal compression operation, wherein aligning the first bond pad and the second bond pad is prior to bonding the first bond pad to the second bond pad,

wherein a plurality of solder bumps are formed on the first semiconductor device prior to the self-aligning.

14. The method of claim 13 , wherein a notch is formed in the dielectric material prior to the self-aligning, the notch being nearby the solder bumps.

15. The method of claim 13 , wherein

providing the first semiconductor device having the first bonding layer comprises providing a plurality of the first semiconductor devices having a plurality of the first bonding layers; and

performing the thermal compression operation comprises performing a gang bond operation to bond the plurality of the first bonding layers and the second bonding layer.

16. The method of claim 13 , further comprising performing a chemical mechanical polishing process on the first bond pad and the dielectric material to form the first bond pad protruding from the top surface of the dielectric material.