Memory system
According to one embodiment, a memory system includes a semiconductor memory and a controller. The semiconductor memory includes first to fourth word lines and first to fourth memory cells. The controller is configured to issue first and second instructions. The controller is further configured to execute a first operation to obtain a first read voltage based on a threshold distribution of the first memory cell, and a second operation to read data from the second memory cell.
1. A memory system comprising:
a semiconductor memory including memory cells; and
a controller controlling the semiconductor memory,
wherein the semiconductor memory includes:
a first block including first word lines to which first memory cells of the memory cells are respectively coupled; and
a second block including second word lines to which second memory cells of the memory cells are respectively coupled, and
wherein the controller is configured to:
repeatedly access the first block and the second block at a first cycle, and
repeatedly access the first word lines in the first block and the second word lines in the second block at a second cycle larger than the first cycle.
2. The system according to claim 1 , wherein,
each of the first and second blocks is a unit of data erasing,
each of the first and second blocks includes a plurality of string units, and
each of the plurality of string units includes a plurality of pages, each of the plurality of pages being a unit of data reading.
3. The system according to claim 2 , wherein when accessing the first and second blocks at the first cycle, the controller shifts one of a selected word line, a selected string unit, and a selected page.
4. The system according to claim 2 , wherein when accessing the first and second blocks at the first cycle, the controller shifts one of an initial word line, an initial string unit, and an initial page to be selected.
5. The system according to claim 1 , wherein,
each of the plurality of string units includes a plurality of pages, each of the plurality of pages being a unit of data reading,
an access target at the first cycle includes at least one page in the first block and at least one page in the second block, and
other pages in the first and second blocks are accessed within the first cycle from next time.
6. The system according to claim 1 , wherein the accesses at the first and second cycles by the controller perform a shift read of memory cells coupled to the accessed word line or determine a threshold distribution of memory cells.
7. The system according to claim 6 , wherein the semiconductor memory includes a third block including third word lines to which third memory cells of the memory cells are coupled,
when the shift read on the first block fails, the controller copies data in the first block to the third block, and
when the shift read on the second block fails, the controller copies data in the second block to the third block.
8. The system according to claim 1 , wherein data read from the memory cells by the accesses at the first and second cycles is not transmitted to a host apparatus capable of accessing the memory system.
9. A method of controlling a semiconductor memory including a first block and a second block, the first block including first word lines to which first memory cells of the memory cells are respectively coupled, the second block including second word lines to which second memory cells of the memory cells are respectively coupled, the method comprising:
repeatedly access the first block and the second block at a first cycle; and
repeatedly access the first word lines in the first block and the second word lines in the second block at a second cycle larger than the first cycle.
10. The method according to claim 9 , wherein,
each of the first and second blocks is a unit of data erasing,
each of the first and second blocks includes a plurality of string units, and
each of the plurality of string units includes a plurality of pages, each of the plurality of pages being a unit of data reading.
11. The method according to claim 10 , further comprising shifting, when accessing the first and second blocks at the first cycle, one of a selected word line, a selected string unit, and a selected page.
12. The method according to claim 10 , further comprising shifting, when accessing the first and second blocks at the first cycle, one of an initial word line, an initial string unit, and an initial page to be selected.
13. The method according to claim 9 , wherein
each of the first and second blocks is a unit of data erasing,
each of the plurality of string units includes a plurality of pages, each of the plurality of pages being a unit of data reading,
an access target at the first cycle includes at least one page in the first block and at least one page in the second block, and
other pages in the first and second blocks are accessed within the first cycle from next time.
14. The method according to claim 9 , wherein the accessing at the first and second cycles includes performing a shift read of memory cells coupled to the accessed word line or determining a threshold distribution of memory cells.
15. The method according to claim 14 , wherein the semiconductor memory includes a third block including third word lines to which third memory cells of the memory cells are coupled, further comprising:
copying, when the shift read on the first block fails, data in the first block to the third block; and
copying, when the shift read on the second block fails, data in the second block to the third block.
16. The method according to claim 9 , further comprising
in response to a read command from a host apparatus, reading first data stored in a physical address of the semiconductor memory and transmitting second data to the host apparatus, the physical address being mapped to a logical address specified by the read command, the second data corresponding to the read first data, wherein
data read from the memory cells by the accesses at the first and second cycles is not transmitted to the host apparatus.