Contacts for solar cells
A method of fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a metal layer on the dielectric layer. The method can also include configuring a laser beam with a particular shape and directing the laser beam with the particular shape on the metal layer, where the particular shape allows a contact to be formed between the metal layer and the solar cell structure.
1. A solar cell, comprising:
a doped region on the solar cell, wherein the doped region is located at a back surface of the solar cell;
a dielectric layer directly on the doped region, the dielectric layer having a dissociated region therein, wherein the dissociated region is in contact with the doped region, wherein the dissociated region comprises dissociated material of the dielectric layer; and
a metal layer directly on the dielectric layer, the metal layer in contact with the dissociated material of the dissociated region of the dielectric layer, and wherein the dissociated material of the dissociated region of the dielectric layer is vertically between and physically contacts both the metal layer and the doped region.
2. The solar cell of claim 1 , wherein the doped region is an N-type doped region or a P-type doped region.
3. The solar cell of claim 1 , wherein the dissociated region provides an ohmic contact between the metal layer and the doped region.
4. The solar cell of claim 1 , wherein the dissociated region mechanically couples the metal layer and the doped region.
5. The solar cell of claim 1 , the metal layer comprises a metal foil.
6. The solar cell of claim 1 , wherein the dissociated region is a melted amorphous silicon region.
7. The solar cell of claim 1 , wherein the metal layer comprises a metal selected from a group consisting of copper, tin, aluminum, silver, gold, chromium, iron, nickel, zinc, ruthenium, palladium and platinum.
8. The solar cell of claim 1 , wherein the dielectric layer comprises a material selected from a group consisting of silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, amorphous silicon and polysilicon.
9. A solar cell, comprising:
a doped region on the solar cell, wherein the doped region is located at a back surface of the solar cell;
a dielectric layer directly on the doped region, the dielectric layer having a partially removed region therein, wherein the partially removed region is in contact with the doped region, wherein the partially removed region comprises material of the dielectric layer; and
a metal layer directly on the dielectric layer, the metal layer is in contact with the material of the dielectric layer of the partially removed region of the dielectric layer, and wherein the material of the dielectric layer of the partially removed region of the dielectric layer is vertically between and physically contacts both the metal layer and the doped region.
10. The solar cell of claim 9 , wherein the doped region is an N-type doped region or a P-type doped region.
11. The solar cell of claim 9 , wherein the partially removed region provides an ohmic contact between the metal layer and the doped region.
12. The solar cell of claim 9 , wherein the partially removed region mechanically couples the metal layer and the doped region.
13. The solar cell of claim 9 , wherein the metal layer comprises a metal foil.
14. The solar cell of claim 9 , wherein the metal layer comprises a metal selected from a group consisting of copper, tin, aluminum, silver, gold, chromium, iron, nickel, zinc, ruthenium, palladium and platinum.
15. The solar cell of claim 9 , wherein the dielectric layer comprises a material selected from a group consisting of silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, amorphous silicon and polysilicon.
16. A solar cell, comprising:
a silicon substrate having a back surface opposite a light-receiving surface;
a N-type doped region and a P-type doped region on the silicon substrate, wherein the N-type doped region and the P-type doped region are located at the back surface of the silicon substrate;
a dielectric layer directly on the N-type doped region and the P-type doped region, the dielectric layer having a dissociated region therein, wherein the dissociated region is in contact with the N-type doped region and the P-type doped region, wherein the dissociated region comprises dissociated material of the dielectric layer; and
a metal layer directly on the dielectric layer, the metal layer is in contact with the dissociated material of the dissociated region of the dielectric layer, and wherein the dissociated material of the dissociated region of the dielectric layer is vertically between and physically contacts both the metal layer and one of the P-type doped region or the N-type doped region.
17. The solar cell of claim 16 , wherein the dissociated region provides an ohmic contact between the metal layer and one of the N-type doped region or P-type doped region.
18. The solar cell of claim 16 , wherein the dielectric layer comprises a material selected from a group consisting of silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, amorphous silicon and polysilicon.
19. The solar cell of claim 16 , wherein the metal layer comprises a metal foil.
20. The solar cell of claim 16 , wherein the metal layer comprises a metal selected from a group consisting of copper, tin, aluminum, silver, gold, chromium, iron, nickel, zinc, ruthenium, palladium and platinum.