IP Library › Granted Patent US 11,676,912
Granted Patent B2
US 11,676,912 · App. 17/133,365 · Granted Jun 13, 2023

Semiconductor device package and method for manufacturing the same

Inventors: Chia Hsiu Huang (Kaohsiung, TW); Chun Chen Chen (Kaohsiung, TW); Wei Chih Cho (Kaohsiung, TW); Shao-Lun Yang (Kaohsiung, TW)
Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
H01L23/562H01L21/4853H01L21/4857H01L21/565H01L23/3121H01L23/49822H01L23/49838H01L24/32H01L24/48H01L24/73H01L2224/32225H01L2224/48227H01L2224/73265
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Quick Facts
Patent No.
US 11,676,912
App. No.
17/133,365
Granted
Jun 13, 2023
Kind
B2
Abstract

A semiconductor device package and a method for manufacturing a semiconductor device package are provided. The semiconductor device package includes a substrate, a clip, and a support structure. The clip is disposed on the substrate. The clip includes a first portion and a second portion separated from each other by a slit. The support structure is above the substrate and supports the clip. The support structure has a first surface and a second surface facing the first surface, and the first surface and the second surface define a gap.

Claims (39)

1. A semiconductor device package, comprising:

a substrate;

a clip disposed on the substrate, the clip comprising a first portion and a second portion separated from each other by a slit; and

a support structure disposed above the substrate and supporting the clip, wherein the support structure has a first surface and a second surface facing the first surface, and the first surface and the second surface define a gap;

wherein the support structure at least partially encapsulates the clip, and the support structure has a first opening exposing the slit of the clip.

2. The semiconductor device package of claim 1 , wherein the slit of the clip is within the first opening of the support structure.

3. The semiconductor device package of claim 1 , wherein the first opening of the support structure aligns with the slit of the clip from a top view perspective.

4. The semiconductor device package of claim 3 , wherein the first portion of the clip has a first surface facing the slit, the first opening of the support structure has a surface above the slit, and the first surface of the first portion of the clip, the surface of the first opening, and the first surface of the gap are substantially coplanar.

5. The semiconductor device package of claim 1 , further comprising:

a first electronic component disposed between the substrate and the support structure.

6. The semiconductor device package of claim 1 , wherein the support structure has a second opening exposing a conductive element on the clip.

7. The semiconductor device package of claim 6 , further comprising:

a second electronic component connected to the clip through the conductive element.

8. The semiconductor device package of claim 1 , further comprising:

a first electronic component disposed on the substrate, wherein a portion of the support structure is disposed between the first electronic component and the clip.

9. The semiconductor device package of claim 8 , further comprising

a second electronic component disposed on the clip and crossing the first portion and the second portion.

10. The semiconductor device package of claim 1 , wherein a first surface of the first portion of the clip and a second surface of the second portion of the clip define the slit, and the first surface is conformal with the second surface.

11. The semiconductor device package of claim 1 , wherein the slit between the first portion and the second portion has a substantially consistent width.

12. The semiconductor device package of claim 11 , wherein the slit has the consistent width along a direction substantially in parallel with the first surface of the support structure.

13. The semiconductor device package of claim 1 , wherein a width of a first surface of the first portion of the clip is substantially the same as a width of a second surface of the second portion of the clip.

14. The semiconductor device package of claim 13 , further comprising:

a protective layer covering the first surface of the first portion of the clip and the second surface of the second portion of the clip.

15. A semiconductor device package, comprising:

a substrate;

a clip disposed on the substrate, the clip comprising a first portion and a second portion separated from each other by a slit;

an encapsulant between the clip and the substrate, wherein the first portion of the clip has a first surface facing the slit and substantially coplanar with a surface of the encapsulant; and

an electronic component disposed on the clip, wherein the encapsulant has an opening exposing an upper surface of the clip, and the electronic component connects to the upper surface of the clip through the opening.

16. A semiconductor device package, comprising:

a substrate;

a clip disposed on the substrate, the clip comprising a first portion and a second portion separated from each other by a slit; and

an encapsulant between the clip and the substrate, wherein the first portion of the clip has a first surface facing the slit and substantially coplanar with a surface of the encapsulant;

wherein an upper surface of the encapsulant is exposed from an opening, and the upper surface of the encapsulant is below the first surface of the first portion of the clip.

17. A semiconductor device package, comprising:

a substrate;

a clip disposed on the substrate, the clip comprising a first portion and a second portion separated from each other by a slit; and

an encapsulant between the clip and the substrate, wherein the first portion of the clip has a first surface facing the slit and substantially coplanar with a surface of the encapsulant;

wherein the encapsulant at least partially encapsulates the clip and exposes the first surface.

18. The semiconductor device package of claim 17 , wherein the second portion of the clip has a second surface facing the slit and a third surface angled with the second surface, and a surface roughness of the second surface is greater than a surface roughness of the third surface.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 8, 2021
From: HUANG, CHIA HSIU; CHEN, CHUN CHEN; CHO, WEI CHIH; YANG, SHAO-LUN
To: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
Reel/Frame 054865/0111 →
Continuity (1)
Related Publication 20220199552A1 · Jun 23, 2022
Cited By (2)
US 12,580,126 US 12,614,677