IP Library Granted Patent US 11,527,448
Granted Patent B2
US 11,527,448 · App. 17/134,465 · Granted Dec 13, 2022

Semiconductor device and method for fabricating the same

Inventors: Fu-Jung Chuang (Kaohsiung, TW); Po-Jen Chuang (Kaohsiung, TW); Yu-Ren Wang (Tainan, TW); Chi-Mao Hsu (Tainan, TW); Chia-Ming Kuo (Kaohsiung, TW); Guan-Wei Huang (Tainan, TW); Chun-Hsien Lin (Tainan, TW)
Assignee: UNITED MICROELECTRONICS CORP.
H01L21/823878H01L21/76224H01L21/823821H01L27/0924
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 11,527,448
App. No.
17/134,465
Granted
Dec 13, 2022
Kind
B2
Abstract

A method for fabricating semiconductor device includes the steps of first providing a substrate having a fin-shaped structure thereon, forming a single diffusion break (SDB) structure in the substrate to divide the fin-shaped structure into a first portion and a second portion, and then forming more than one gate structures such as a first gate structure and a second gate structure on the SDB structure. Preferably, each of the first gate structure and the second gate structure overlaps the fin-shaped structure and the SDB structure.

Claims (4)

1. A method for fabricating semiconductor device, comprising:

providing a substrate having a fin-shaped structure thereon;

forming a single diffusion break (SDB) structure in the substrate to divide the fin-shaped structure into a first portion and a second portion, wherein the SDB structure comprises silicon oxycarbonitride (SiOCN); and

forming more than one gate structures on the SDB structure.

Priority Claims (1)
TW 107120159 · Jun 12, 2018 · national
Continuity (4)
Division 16802463 · Feb 26, 2020
Continuation In Part 16589032 · Sep 30, 2019
Division 16030871 · Jul 10, 2018
Related Publication 20210118750A1 · Apr 22, 2021