IP Library Granted Patent US 12,123,952
Granted Patent B2
US 12,123,952 · App. 17/134,726 · Granted Oct 22, 2024

Imaging system with time-of-flight sensing

Inventor: Erez Tadmor (Atlit, IL)
Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
G01S17/894G01S7/4865H04N23/73
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,123,952
App. No.
17/134,726
Granted
Oct 22, 2024
Kind
B2
Abstract

A time-of-flight (TOF) sensing system may include an illumination module and a sensor module. The illumination module may emit light having a reduced illumination duty cycle such as a high peak power and low width illumination pulse. The emitted light may reflect off of one or more objects as reflected light. The sensor module may include pixels operable based on a sensor modulation signal to generated image charge portions in response to the reflected light. The sensor modulation signal may be selectively suppressed after a period of time corresponding to a distance of interest. Processing circuitry in the TOF sensing system may obtain TOF information based on a phase difference between the emitted light and the image charge portions determined by cross-correlation data. By using the illumination pulse and the selective sensor modulation suppression, TOF sensing may exhibit reduced aliasing issues and improved ambient light rejection.

Claims (31)

1. A time-of-flight sensing system comprising:

an illumination source configured to emit a light pulse for a time-of-flight sensing operation;

pixels configured to receive reflected light resulting from the emitted light pulse and to generate charge in response to the reflected light during the time-of-flight sensing operation;

driver circuitry configured to control the pixels based on a sensor modulation signal having a modulation frequency during the time-of-flight sensing operation, wherein the illumination source is configured to emit additional light pulses, and the light pulse and the additional light pulses occur at a frequency less than the modulation frequency; and

processing circuitry configured to generate cross-correlation data based on the generated charge to identify time-of-flight information.

2. The time-of-flight sensing system defined in claim 1 , wherein each of the pixels includes a photosensitive element coupled to first and second charge storage region via first and second transistors, respectively.

3. The time-of-flight sensing system defined in claim 2 , wherein the driver circuitry provides first and second corresponding control signals to the first and second transistors for at least a given pixel based on the sensor modulation signal.

4. The time-of-flight sensing system defined in claim 3 , wherein the first and second transistors for the given pixel are alternatively activated by the first and second corresponding control signals to store the generated charge in first and second portions at the first and second charge storage regions, respectively, during the time-of-flight sensing operation.

5. The time-of-flight sensing system defined in claim 4 , wherein the first and second transistors for the given pixel are coupled to a floating diffusion region and pixel readout circuitry, and wherein the given pixel is configured to perform separate readout operations for each of the first and second portions of the generated charge.

6. The time-of-flight sensing system defined in claim 1 , wherein the light pulse and the additional light pulses form an illumination signal having a duty cycle of less than 20 percent.

7. The time-of-flight sensing system defined in claim 1 , wherein each of the additional light pulses is associated with a corresponding additional time-of-flight sensing operation.

8. The time-of-flight sensing system defined in claim 1 , wherein the sensor modulation signal is used to control the pixels during a first time period in the time-of-flight sensing operation and pixel modulation is suppressed during a second time period in the time-of-flight sensing operation.

9. The time-of-flight sensing system defined in claim 8 , wherein the pixels are modulated to store different portions of the generated charge at corresponding charge storage regions in each pixel during the first time period, and wherein pixel modulation is suppressed by stopping an integration of additional charge at the corresponding charge storage regions in each pixel during the second time period.

10. The time-of-flight sensing system defined in claim 8 , wherein the first time period is associated with distances within a target distance of interest, and the second time period is associated with distances outside of the target distance of interest.

11. A method for indirect time-of-flight sensing operations comprising:

emitting a light signal exhibiting light pulses at a pulse frequency;

receiving a reflected light signal resulting from the emitted light signal at sensor module;

performing sensor modulation for the sensor module using a modulation frequency to generate sensor data based on the reflected light signal, wherein the pulse frequency is less than the modulation frequency; and

determining time-of-flight information based on cross-correlation data obtained from the sensor data.

12. The method defined in claim 11 , wherein performing the sensor modulation comprises, for each active pixel in the sensor module, storing different portions of charge at corresponding charge storage regions in each active pixel and separately reading out each of the different portions of charge from each active pixel.

13. The method defined in claim 12 further comprising:

after performing the sensor modulation for a time period associated with a distance of interest, stopping the sensor modulation.

14. The method defined in claim 13 , wherein stopping the sensor modulation comprises, for each active pixel in the sensor module, stopping an integration of additional charge at the corresponding charge storage regions in each active pixel.

15. The method defined in claim 11 , wherein each light pulse in the light signal is associated with a corresponding time-of-flight sensing operation based on which corresponding time-of-flight information is determined.

16. The method defined in claim 11 , wherein the light signal has a duty cycle of less than 20 percent.

17. An indirect time-of-flight sensor comprising:

an illumination module configured to emit a light signal having one illumination pulse for each time-of-flight sensing operation; and

a sensor module configured to receive a reflected light signal based on a reflected version of the emitted light signal, to perform signal modulation based on a modulation frequency to generate charge in response to the reflected light signal for a given time-of-flight sensing operation, and to suppress sensor modulation for the given time-of flight sensing operation based on a distance of interest within which time-of-flight information is determined.

18. The indirect time-of-flight sensor defined in claim 17 , wherein the light signal has a pulse frequency that is less than the modulation frequency.

19. The indirect time-of-flight sensor defined in claim 17 , wherein the sensor module is configured to perform ambient light rejection and aliasing rejection when suppressing the sensor modulation.

20. The time-of-flight sensing system defined in claim 1 , wherein the light pulse and the additional light pulses each exhibit a same peak power that is based on providing a same total illumination for each of the time-of-flight sensing operation and additional time-of-flight sensing operations.

Assignments (3)
RELEASE OF SECURITY INTEREST IN PATENTS PREVIOUSLY RECORDED AT REEL 055315, FRAME 0350 Recorded Aug 17, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064618/0881 →
SECURITY INTEREST Recorded Feb 17, 2021
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 055315/0350 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 28, 2020
From: TADMOR, EREZ
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 054752/0431 →
Continuity (2)
Provisional Application 63015756 · Apr 27, 2020
Related Publication 20210333404A1 · Oct 28, 2021