Passivation against vapor deposition
Passivation layers to inhibit vapor deposition can be used on reactor surfaces to minimize deposits while depositing on a substrate housed therein, or on particular substrate surfaces, such as metallic surfaces on semiconductor substrates to facilitate selective deposition on adjacent dielectric surfaces. Passivation agents that are smaller than typical self-assembled monolayer precursors can have hydrophobic or non-reactive ends and facilitate more dense passivation layers more quickly than self-assembled monolayers, particularly over complex three-dimensional structures.
1. A method for vapor-phase coating, the method comprising:
passivating a conductive surface against vapor-phase deposition, wherein said passivating comprises exposing the conductive surface to a vapor-phase passivating agent to form a passivated conductive surface, and wherein the vapor-phase passivating agent comprises a halide; and
selectively depositing a layer on a dielectric surface relative to the passivated conductive surface by exposing both the passivated conductive surface and the dielectric surface to vapor-phase deposition reactants.
2. The method of claim 1 , wherein the vapor-phase passivating agent deactivates the conductive surface against said selectively depositing.
3. The method of claim 1 , wherein the halide is a haloalkane.
4. The method of claim 1 , wherein the halide is an organic halide.
5. The method of claim 1 , wherein the vapor-phase passivating agent comprises one of dichloromethane or chloromethane.
6. The method of claim 1 , wherein the vapor-phase passivating agent comprises an alkyl group.
7. The method of claim 1 , wherein the halide is smaller than a self-assembled monolayer (SAM) precursor having a carbon chain greater than five (5) carbon atoms.
8. The method of claim 7 , wherein the halide comprises halogen terminations.
9. The method of claim 7 , wherein the passivated conductive surface comprises hydrophobic terminations or terminations that are inert to the selective deposition of the vapor-phase deposition reactants.
10. The method of claim 1 , wherein the halide comprises one or more alkyl chains, wherein the one or more alkyl chains each have fewer than 5 carbon atoms.
11. The method of claim 1 , wherein the halide comprises a silane or a germane.
12. The method of claim 1 , wherein the vapor-phase passivating agent comprises a compound of the formulae R 1 R 2 SiX or R 1 R 2 R 3 SiX, where:
R 1 , R 2 and R 3 are each individually hydrogen or an alkyl group with less than 5 carbon atoms each; and
X is a halogen.
13. The method of claim 1 , wherein the vapor-phase passivating agent is not heated prior to introduction to exposing the conductive surface.
14. The method of claim 1 , wherein the conductive surface comprises a metallic surface.
15. The method of claim 1 , wherein the conductive surface comprises one or more of TiN, W, Co, Cu, Ir or TaN.
16. The method of claim 1 , wherein the dielectric surface comprises an oxide or nitride surface.
17. The method of claim 1 , wherein said selectively depositing comprises atomic layer deposition.
18. The method of claim 1 , wherein said passivating the conductive surface selectively forms the passivated conductive surface relative to the dielectric surface.
19. The method of claim 18 , where said passivating the conductive surface selectively forms passivation material directly on the conductive surface without blocking passivation on the dielectric surface and without catalytic agents on the conductive surface.
20. The method of claim 1 , wherein said passivating the conductive surface is performed in about 1 day or less.