Power module and related methods
Implementations of semiconductor packages may include a substrate, a first die coupled on the substrate, and a lead frame coupled over the substrate. The lead frame may include a die attach pad. Implementations of semiconductor packages may also include a second die coupled on the die attach pad. The second die may overlap the first die.
1. A semiconductor package comprising:
a substrate;
a first die coupled on the substrate;
a lead frame coupled over the substrate, the lead frame comprising a die attach pad; and
a second die coupled on the die attach pad;
wherein the second die overlaps the first die; and
wherein the first die is wire bonded to the second die.
2. The semiconductor package of claim 1 , wherein the die attach pad is coupled directly over the substrate.
3. The semiconductor package of claim 1 , further comprising a third die coupled on the substrate.
4. The semiconductor package of claim 3 , wherein the first die and the third die are power die and the second die is an integrated circuit die.
5. The semiconductor package of claim 1 , further comprising a wire bond between the second die and the lead frame.
6. The semiconductor package of claim 1 , wherein a portion of the second die extends beyond a perimeter of first die.
7. The semiconductor package of claim 1 , wherein at least half of the first die extends beyond a perimeter of the die attach pad.
8. The semiconductor package of claim 1 , wherein the first die is directly coupled to the substrate through an adhesive.
9. A semiconductor package comprising:
a substrate;
a first die comprising a first side and a second side opposite the first side, the first side coupled to and facing the substrate;
a third die coupled to the substrate;
a lead frame coupled over the substrate, the lead frame comprising a die attach pad;
at least two tie bars coupled between the lead frame and the substrate;
a second die coupled on the die attach pad and over the second side of the first die; and
a mold compound encapsulating the first die, the second die, and the third die;
wherein the second die overlaps the first die; and
wherein the second die is configured to wire bond to the first die.
10. The semiconductor package of claim 9 , wherein the mold compound is between the second side of the first die and the second die.
11. The semiconductor package of claim 10 , further comprising a third wire bond between the first die and the third die and between the third die and the lead frame.
12. The semiconductor package of claim 9 , further comprising the second die and a second wire bond between the second die and the lead frame.
13. The semiconductor package of claim 9 , further comprising a third tie bar coupled between the lead frame and the substrate, wherein the at least two tie bars, the third tie bar, and the die attach pad are all directly coupled to a same side of the lead frame.
14. The semiconductor package of claim 9 , further comprising a fifth die overlapping a fourth die.
15. The semiconductor package of claim 9 , wherein a portion of the second die extends beyond a perimeter of first die.
16. The semiconductor package of claim 9 , wherein at least half of the first die extends beyond a perimeter of the die attach pad.
17. The semiconductor package of claim 9 , wherein the first die is directly coupled to the substrate through an adhesive.
18. The semiconductor package of claim 9 , wherein the at least two tie bars are directly coupled to the substrate through an adhesive.