HIGH DYNAMIC RANGE IMAGE SENSORS
An image sensor may include an image sensor pixel array, row control circuitry, and column readout circuitry. Pixels in the image sensor pixel array may each include multiple photosensitive elements disposed around one another. Each pixel may also include first and second in-pixel memory configured to store corresponding overflow charge from first and second photosensitive elements, respectively. The first photosensitive element may be a large photodiode while the second photosensitive element may be a small photodiode. If desired, the large photodiode may be implemented as a set of split but interconnected photodiodes. If desired, each pixel may also include a medium photodiode.
1 . An image sensor pixel comprising:
a first photosensitive element;
a second photosensitive element;
a floating diffusion region, the second photosensitive element coupled between the first photosensitive element and the floating diffusion region;
a first charge storage structure coupled to the floating diffusion region; and
a second charge storage structure coupled to the floating diffusion region.
2 . The image sensor pixel defined in claim 1 , wherein the first photosensitive element comprises a first pinned photodiode having a first pinned voltage and the second photosensitive element comprises a second pinned photodiode having a second pinned voltage that is greater than the first pinned voltage.
3 . The image sensor pixel defined in claim 1 , wherein the first photosensitive element comprises a first photodiode, the second photosensitive element comprises a second photodiode, and the first photodiode is disposed around the second photodiode.
4 . The image sensor pixel defined in claim 3 , wherein the first photodiode is formed from a set of split photodiodes that are coupled to each other.
5 . The image sensor pixel defined in claim 3 , wherein the first photodiode is larger than the second photodiode.
6 . The image sensor pixel defined in claim 1 , wherein the first charge storage structure is configured to store a portion of charge generated by the first photosensitive element, and the second charge storage structure is configured to store a portion of charge generated by the second photosensitive element.
7 . The image sensor pixel defined in claim 6 , wherein the portion of charge generated by the first photosensitive element and stored at the first charge storage structure comprises overflow charge generated by the first photosensitive element, and the portion of charge generated by the second photosensitive element and stored at the second charge storage structure comprises overflow charge generated by the second photosensitive element.
8 . The image sensor pixel defined in claim 1 , wherein the first charge storage structure comprises a first capacitor, and the second charge storage structure comprises a second capacitor.
9 . The image sensor pixel defined in claim 1 , further comprising:
a first transistor that couples the first photosensitive element to the first charge storage structure.
10 . The image sensor pixel defined in claim 9 , further comprising:
a second transistor that couples the second photosensitive element to the floating diffusion region; and
a third transistor that couples the second charge storage structure to the floating diffusion region.
11 . The image sensor pixel defined in claim 10 , wherein the first transistor forms a first charge overflow path for the first photosensitive element, and the second and third transistors form a second charge overflow path for the second photosensitive element.
12 . The image sensor pixel defined in claim 10 , further comprising:
a fourth transistor that couples the first photosensitive element to the second photosensitive element; and
a fifth transistor that couples the first charge storage structure to the floating diffusion region.
13 . The image sensor pixel defined in claim 9 , further comprising:
a reset transistor coupled to the first charge storage structure.
14 . The image sensor pixel defined in claim 1 , further comprising:
a source follower transistor coupled to the floating diffusion region; and
a row select transistor that couples the source follower transistor to a pixel output path.
15 . The image sensor pixel defined in claim 1 , further comprising:
a third photosensitive element coupled between the first and second photosensitive elements.
16 . An image sensor pixel comprising:
a first photodiode;
a second photodiode, the first photodiode disposed around the second photodiode;
a floating diffusion region coupled to the second photodiode;
a first charge storage structure coupled to the first photodiode; and
a second charge storage structure coupled to the floating diffusion region.
17 . The image sensor pixel defined in claim 16 , wherein the first photodiode comprises a set of split photodiodes coupled to each other and each disposed around the second photodiode.
18 . The image sensor pixel defined in claim 16 , further comprising:
a plurality of transistors that couple the first photodiode to the second photodiode.
19 . An image sensor comprising:
an image sensor pixel array, each pixel in the image sensor pixel array including:
first and second photodiodes,
first and second in-pixel memories configured to store first charge generated by the first photodiode and second charge generated by the second photodiode, and
a floating diffusion region coupled to the first and second in-pixel memories.
20 . The image sensor defined in claim 19 , wherein the first photodiode at least partially and laterally surrounds the second photodiode, and the first and second in-pixel memories are first and second capacitor, respectively.