Solid-state imaging apparatus having output circuit unit for outputting a pixel signal
The present disclosure relates to reducing the size of a solid-state imaging apparatus. The solid-state imaging apparatus is configured by laminating a first structure body, comprising a pixel array unit in which pixels for performing photoelectric conversion are two-dimensionally aligned, and a second structure body, comprising an output circuit unit for outputting a pixel signal. The output circuit unit, including a through via which penetrates a semiconductor substrate constituting a part of the second structure body, and a signal output external terminal connected to the outside of the apparatus are arranged under the first structure body, the output circuit unit is connected to the signal output external terminal via the through via, and the outermost surface of the apparatus is a resin layer formed on an upper layer of an on-chip lens of the pixel array unit.
1. A solid-state imaging apparatus, comprising:
a laminated structure including:
a semiconductor substrate;
a pixel array unit having pixels, wherein each pixel includes a photodiode;
an output circuit outputting a pixel signal outputted from the pixels; and
a signal output external terminal connected to the output circuit via a through via;
an on-chip lens above the laminated structure;
a resin layer formed on a light incident surface of the on-chip lens; and
a rib structure body formed on at least a portion of an outer peripheral portion of the pixel array unit, wherein the rib structure body is formed of a metal film of copper (Cu), aluminum (Al), tungsten (W), or the like.
2. The solid-state imaging apparatus according to claim 1 , wherein the resin layer comprises an organic resin.
3. The solid-state imaging apparatus according to claim 2 , wherein the organic resin contains a fluorescent pigment.
4. The solid-state imaging apparatus according to claim 3 , wherein each photodiode senses light emission by the fluorescent pigment contained in the organic resin.
5. The solid-state imaging apparatus according to claim 1 , wherein the resin layer comprises a silicate-based fluorescent material.
6. The solid-state imaging apparatus according to claim 1 , wherein the resin layer comprises a nitride-based fluorescent material.
7. The solid-state imaging apparatus according to claim 1 , further comprising:
a laminated lens structure body formed above the resin layer.
8. The solid-state imaging apparatus according to claim 7 , wherein the laminated lens structure body comprises a plurality of lens-attached substrates.
9. The solid-state imaging apparatus according to claim 8 , wherein each lens-attached substrate has a configuration in which a lens resin portion is added to a carrier substrate.
10. The solid-state imaging apparatus according to claim 9 , wherein the carrier substrate has a through hole, and wherein the lens resin portion is formed inside the through hole.
11. The solid-state imaging apparatus according to claim 7 , wherein the laminated lens structure body is formed by laminating together two lens-attached substrates.
12. The solid-state imaging apparatus according to claim 1 , wherein the rib structure body has a rectangular shape so as to surround the outer peripheral portion of the pixel array unit.
13. The solid-state imaging apparatus according to claim 1 , wherein the rib structure body is formed in four corners of the outer peripheral portion of the pixel array unit.
14. A solid-state imaging apparatus, comprising:
a laminated structure including:
a semiconductor substrate;
a pixel array unit having pixels, wherein each pixel includes a photodiode;
an output circuit outputting a pixel signal outputted from the pixels; and
a signal output external terminal connected to the output circuit via a through via;
an on-chip lens arranged in a sealing resin formed above the laminated structure;
a protective substrate formed above the sealing resin, wherein a hardness of the sealing resin is lower than a hardness of the protective substrate; and
a rib structure body formed on at least a portion of an outer peripheral portion of the pixel array unit.
15. The solid-state imaging apparatus according to claim 14 , wherein the rib structure body is formed in four corners of the outer peripheral portion of the pixel array unit.
16. The solid-state imaging apparatus according to claim 14 , wherein the rib structure body is formed of a metal film of copper (Cu), aluminum (Al), tungsten (W), or the like.
17. The solid-state imaging apparatus according to claim 14 , wherein the rib structure body is formed of silicon, an oxide film, a nitride film, or the like.