IP Library Granted Patent US 11,749,503
Granted Patent B2
US 11,749,503 · App. 17/151,839 · Granted Sep 5, 2023

Processing method and plasma processing apparatus

Inventor: Takuto Yoshimura (Miyagi, JP)
Assignee: Tokyo Electron Limited
H01J37/32174H01J37/32146H01J37/32568H01J37/32715
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Quick Facts
Patent No.
US 11,749,503
App. No.
17/151,839
Granted
Sep 5, 2023
Kind
B2
Abstract

A method performed by a plasma processing apparatus including a first electrode and a second electrode is provided. The method includes applying a pulsed wave of first radio frequency (RF) power to the first electrode or the second electrode; and applying a pulsed wave of second RF power having a lower frequency than the first RF power, to the first electrode with a given phase difference relative to the pulsed wave of the first RF power. A first on-period of the second RF power and a second on-period of the second RF power are controlled such that the first on-period and the second on-period do not overlap with a period of time while the first RF power is turned on. Also, the first on-period is controlled such that the first on-period ends just before the first RF power is turned on.

Claims (25)

1. A method performed by a plasma processing apparatus including a first electrode and a second electrode, the method comprising:

applying a pulsed wave of first radio frequency (RF) power to the first electrode or the second electrode; and

applying a pulsed wave of second RF power to the first electrode, with a given phase difference relative to the pulsed wave of the first RF power, the second RF power having a lower frequency than the first RF power; wherein the applying of the pulsed wave of the second RF power includes

controlling a first on-period of the second RF power during which the second RF power is turned on and a second on-period of the second RF power during which the second RF power is turned on, such that the first on-period and the second on-period do not overlap with a period of time while the first RF power is turned on, the first on-period being different from the second on-period; and

controlling the first on-period such that the first on-period ends just before the first RF power is turned on.

2. The method according to claim 1 , wherein

a timing when the first on-period ends is within a range between 0 seconds and 200 microseconds prior to a time when the first RF power is turned on.

3. The method according to claim 1 , further comprising

setting a first duty cycle that controls the period of time during which the first RF power is turned on, the given phase difference, an off-period that divides a period of time while the second RF power is turned on into the first on-period and the second on-period, and a start timing indicating a time when the off-period starts; wherein

the applying of the pulsed wave of the first RF power includes applying the pulsed wave of the first RF power with the first duty cycle;

the controlling of the second on-period includes

controlling a start time of the second on-period of the second RF power based on the given phase difference, and

turning off the second RF power for a period corresponding to the off-period, from a time indicated by the start timing; and

the controlling of the first on-period includes

turning on the second RF power after the period corresponding to the off-period has elapsed.

4. The method according to claim 1 , further comprising

setting a first duty cycle that controls the period of time during which the first RF power is turned on, and the given phase difference; wherein

the applying of the pulsed wave of the first RF power includes applying the pulsed wave of the first RF power with the first duty cycle;

the controlling of the first on-period includes

controlling a start time of the first on-period of the second RF power based on the given phase difference, and

turning off the second RF power at a time when the first RF power is turned on; and

the controlling of the second on-period includes

turning on the second RF power at a time when the first RF power is turned off.

5. The method according to claim 1 , wherein

the second RF power applied during the first on-period is used to ignite a plasma generated during the period of time while the first RF power is turned on.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 19, 2021
From: YOSHIMURA, TAKUTO
To: TOKYO ELECTRON LIMITED
Reel/Frame 054950/0135 →
Priority Claims (1)
JP JP2020-010847 · Jan 27, 2020 · national
Continuity (1)
Related Publication 20210233743A1 · Jul 29, 2021
Cited By (3)
US 12,249,486 US 12,362,144 US 12,719,020