Copper paste for pressureless bonding, bonded body and semiconductor device
A copper paste for pressureless bonding is a copper paste for pressureless bonding, containing: metal particles; and a dispersion medium, in which the metal particles include sub-micro copper particles having a volume average particle diameter of greater than or equal to 0.01 μm and less than or equal to 0.8 μm, and micro copper particles having a volume average particle diameter of greater than or equal to 2.0 μm and less than or equal to 50 μm, and the dispersion medium contains a solvent having a boiling point of higher than or equal to 300° C., and a content of the solvent having a boiling point of higher than or equal to 300° C. is greater than or equal to 2 mass % on the basis of a total mass of the copper paste for pressureless bonding.
1. A paste for pressureless bonding, containing:
metal particles; and
a dispersion medium,
wherein the dispersion medium contains a solvent having a boiling point of higher than or equal to 300° C., and a content of the solvent having a boiling point of higher than or equal to 300° C. is greater than or equal to 2 mass % on the basis of a total mass of the copper paste for pressureless bonding, and the solvent having a boiling point of higher than or equal to 300° C. has at least one type of group selected from the group consisting of a hydroxy group, an ether group, and an ester group.
2. The paste for pressureless bonding according to claim 1 ,
wherein the content of the solvent having a boiling point of higher than or equal to 300° C. that remains when a temperature rises to 300° C. from 25° C. is greater than or equal to 1 mass % on the basis of a mass of the paste for pressureless bonding when a temperature rises to 300° C.
3. A bonded body, comprising:
a first member;
a second member having a thermal expansion rate different from that of the first member; and
a sintered body of the paste for pressureless bonding according to claim 1 , the sintered body bonding the first member and the second member together.
4. A manufacturing method of a bonded body, comprising:
a step of preparing a laminated body in which a first member, the paste for pressureless bonding according to claim 1 , and a second member having a thermal expansion rate different from that of the first member are laminated in this order in a direction side in which self-weight of the first member acts, and of sintering the paste for pressureless bonding in a state of receiving the self-weight of the first member, or the self-weight of the first member and a pressure of less than or equal to 0.01 MPa.
5. A semiconductor device, comprising:
a first member;
a second member having a thermal expansion rate different from that of the first member; and
a sintered body of the paste for pressureless bonding according to claim 1 , the sintered body bonding the first member and the second member together,
wherein at least one of the first member and the second member is a semiconductor element.
6. A copper paste for pressureless bonding, containing:
metal particles; and
a dispersion medium,
wherein the dispersion medium contains a solvent having a boiling point of higher than or equal to 300° C., and a content of the solvent having a boiling point of higher than or equal to 300° C. is greater than or equal to 8 volume % on the basis of a total volume of the paste for pressureless bonding, and the solvent having a boiling point of higher than or equal to 300° C. has at least one type of group selected from the group consisting of a hydroxy group, an ether group, and an ester group.
7. The paste for pressureless bonding according to claim 2 ,
wherein the content of the solvent having a boiling point of higher than or equal to 300° C. that remains when a temperature rises to 300° C. from 25° C. is greater than or equal to 1 mass % on the basis of a mass of the paste for pressureless bonding when a temperature rises to 300° C.