IP Library › Granted Patent US 11,630,168
Granted Patent B2
US 11,630,168 · App. 17/166,301 · Granted Apr 18, 2023

Linear sensor with dual spin valve element having reference layers with magnetization directions different from an external magnetic field direction

Inventors: Rémy Lassalle-Balier (Bures sur Yvette, FR); Maxime Rioult (Massy, FR)
Assignee: Allegro MicroSystems, LLC
G01R33/093G01R33/098H01L43/02H01L43/08H01L43/10
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Quick Facts
Patent No.
US 11,630,168
App. No.
17/166,301
Granted
Apr 18, 2023
Kind
B2
Abstract

In one aspect, a linear sensor includes at least one magnetoresistance element that includes a first spin valve and a second spin valve positioned on the first spin valve. The first spin valve includes a first set of reference layers having a magnetization direction in a first direction and a first set of free layers having a magnetization direction in a second direction orthogonal to the first direction. The second spin valve includes a second set of reference layers having a magnetization direction in the first direction and a second set of free layers having a magnetization direction in a third direction orthogonal to the first direction and antiparallel to the second direction. The first direction is neither parallel nor antiparallel to a direction of an expected magnetic field.

Claims (49)

1. A linear sensor comprising:

a first bridge comprising:

a first spin valve;

a second spin valve in series with the first spin valve;

a third spin valve in parallel with the first spin valve; and

a fourth spin valve in series with the third spin valve; and

a second bridge comprising:

a fifth spin valve;

a sixth spin valve in series with the fifth spin valve element;

a seventh spin valve in parallel with the fifth spin valve; and

an eighth spin valve in series with the seventh spin valve,

wherein the first spin valve comprises:

a first set of reference layers having a magnetization direction in a first direction;

a first set of free layers having a magnetization direction in a second direction orthogonal to the first direction; and

wherein the fifth spin valve is positioned on the first spin valve,

wherein the fifth spin valve comprises:

a second set of reference layers having a magnetization direction in the first direction;

a second set of free layers having a magnetization direction in a third direction orthogonal to the first direction and antiparallel to the second direction,

wherein the first direction is neither parallel nor antiparallel to a direction of an external magnetic field,

wherein the first and second bridges detect magnetic field changes caused by a target object enabling the linear sensor to provide a differential signal indicating a linear position of the target object.

2. The linear sensor of claim 1 , wherein the first, second, third and fourth spin valves are electrically the same.

3. The linear sensor of claim 2 , wherein the fifth, sixth, seventh and eighth spin valves are electrically the same.

4. The linear sensor of claim 3 , wherein the sixth spin valve is positioned on the second spin valve,

wherein the seventh spin valve is positioned on the third spin valve, and

wherein the eighth spin valve is positioned on the fourth spin valve.

5. The linear sensor of claim 1 , wherein the first set of reference layers and the second set of reference layers share one or more layers.

6. The linear sensor of claim 5 , wherein the first spin valve further comprises a first set of free layers positioned between the first set of reference layers and the first set of bias layers, and

wherein the second spin valve further comprises a second set of free layers positioned between the second set of reference layers and the second set of bias layers.

7. The linear sensor of claim 1 , wherein the first spin valve is either a giant magnetoresistance element (GMR) or a tunneling magnetoresistance element (TMR).

8. The linear sensor of claim 7 , wherein the second spin valve is either a giant magnetoresistance element (GMR) or a tunneling magnetoresistance element (TMR).

9. The linear sensor of claim 1 , wherein the output of the first bridge and the second bridge are weighted with respect to each other based on their respective sensitivities.

10. The linear sensor of claim 1 , wherein the first bridge is a voltage bridge, and the second bridge is a voltage bridge.

11. The linear sensor of claim 1 , wherein the first bridge is a current bridge, and the second bridge is a current bridge.

12. The linear sensor of claim 1 , wherein the first bridge is a conductance bridge, and the second bridge is a conductance bridge.

13. The linear sensor of claim 1 , wherein the first direction and the direction of the expected magnetic field form a tilt angle,

wherein the tilt angle is between 0° and 30° .

14. The linear sensor of claim 13 , wherein the tilt angle enables the linear sensor to have a linear range more than 65% greater than a linear sensor with a tilt angle of 0° and to have a sensitivity no more than 4% less than a sensitivity of the linear sensor with the tilt angle of 0° .

15. The linear sensor of claim 13 , wherein the tilt angle enables the linear sensor to have a linear range more than 50% greater than a linear sensor with a tilt angle of 0° and to have a sensitivity no more than 0.25% less than a sensitivity of the linear sensor with the tilt angle of 0° .

16. The linear sensor of claim 13 , wherein the tilt angle enables the linear sensor to have a linear range more than 35% greater than a linear sensor with a tilt angle of 0° and to have a sensitivity more than 2.5% greater than a sensitivity of the linear sensor with the tilt angle of 0° .

17. A method comprising,

forming a linear sensor comprising:

a first bridge comprising a first set of spin valves each comprising a first set of reference layers having a magnetization direction in a first direction; and

a second bridge comprising a second set of spin valves each comprising a second set of reference layers having a magnetization direction in the first direction, wherein the first direction is neither parallel nor antiparallel to a direction of an expected magnetic field, wherein the first direction and the direction of the expected magnetic field form a tilt angle, wherein the tilt angle is greater than 0° ;

measuring a sensitivity of a first bridge to changes in a magnetic field;

measuring a sensitivity of a second bridge to changes in the magnetic field; and

weighting an output of the first bridge and an output of the second bridge based on the measured sensitivities of the first and second bridges.

18. The method of claim 17 , wherein the tilt angle enables the linear sensor to have a linear range more than 65% greater than a linear sensor with a tilt angle of 0° and to have a sensitivity no more than 4% less than a sensitivity of the linear sensor with the tilt angle of 0° .

19. The method of claim 17 , wherein the tilt angle enables the linear sensor to have a linear range more than 50% greater than a linear sensor with a tilt angle of 0° and to have a sensitivity no more than 0.25% less than a sensitivity of the linear sensor with the tilt angle of 0° .

20. The method of claim 17 , wherein the tilt angle enables the linear sensor to have a linear range more than 35% greater than a linear sensor with a tilt angle of 0° and to have a sensitivity more than 2.5% greater than a sensitivity of the linear sensor with the tilt angle of 0° .

Assignments (2)
PATENT SECURITY AGREEMENT Recorded Jun 22, 2023
From: ALLEGRO MICROSYSTEMS, LLC
To: MORGAN STANLEY SENIOR FUNDING, INC., AS THE COLLATERAL AGENT
Reel/Frame 064068/0459 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 4, 2021
From: LASSALLE-BALIER, RÉMY; RIOULT, MAXIME; ALLEGRO MICROSYSTEMS EUROPE LIMITED; CRIVASENSE TECHNOLOGIES SAS
To: ALLEGRO MICROSYSTEMS, LLC
Reel/Frame 055147/0786 →
Continuity (1)
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