IP Library Granted Patent US 12,481,214
Granted Patent B2
US 12,481,214 · App. 17/166,812 · Granted Nov 25, 2025

Correction of blur variation in a multi-beam writer

Inventors: Christoph Spengler (Vienna, AT); Wolf Naetar (Vienna, AT); Johannes Leitner (Vienna, AT)
Assignee: IMS Nanofabrication GmbH
G03F1/74G03F1/70G03F7/70516
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Quick Facts
Patent No.
US 12,481,214
App. No.
17/166,812
Granted
Nov 25, 2025
Kind
B2
Abstract

In order to compensate for undesired effects of varying elevation of a target with respect to a nominal target plane, during writing a desired pattern on the target in a charged-particle beam apparatus, the pattern is re-calculated in each of a number of segments of the target plane by: determining an elevation of the target in the segment from the nominal target plane; determining a local blur value which represents the actual value of blur corresponding to the elevation, with regard to a dependence of the blur upon the elevation of the target; calculating a convolution kernel which represents a point spreading function realizing a local blur value; and re-calculating a nominal exposure pattern by applying the kernel to the pattern. The convolution kernel corresponds to introducing an additional blur into the pattern in the segment, increasing the blur to a given target blur value which is uniform to all segments.

Claims (40)

1 . A method for computing an exposure pattern for exposing a desired pattern on a target in a charged-particle multi-beam processing apparatus, in which a particle beam is directed to and illuminates a pattern definition device comprising an aperture array composed of a plurality of blanking apertures through which said particle beam penetrates for writing said desired pattern by exposing a multitude of pixels within an exposure area on the target by means of said particle beam impinging on the target according to a nominal beam direction, the target being oriented along a nominal target plane substantially perpendicular to said nominal beam direction,

wherein a writing process for writing said desired pattern comprises imaging of the blanking apertures onto the target in each of a sequence of exposure intervals, thus generating a corresponding plurality of aperture images, wherein said imaging of blanking apertures onto the target involves a blur,

the method taking into account an elevation of the target within the exposure area relative to the nominal target plane, as well as a dependence of the blur upon such elevation of the target according to an elevation dependence function,

wherein the desired pattern is provided as a graphical representation composed of a multitude of image elements in a correspondence to said multitude of pixels in the exposure area on the target,

wherein in the pattern definition device said plurality of blanking apertures is arranged in a predetermined arrangement defining mutual positions of the blanking apertures, each blanking aperture being selectively adjustable with regard to a dose value to be exposed through the respective blanking aperture onto a corresponding aperture image generated on the target during a respective exposure interval,

the method comprising:

(i) measuring an elevation of the target at a reference point within the exposure area, said elevation representing a local shift of the target from the nominal target plane at the location of said reference point,

(ii) determining, based on said elevation dependence function, a local blur value, said local blur value representing the actual value of blur corresponding to the elevation of the target determined in the previous step,

(iii) determining, based on said local blur value and a given target blur level, an additional correction blur value and calculating a convolution kernel using said correction blur value, said kernel describing a mapping from an image element of the graphical representation to a group of pixels, said group of pixels being centered around a nominal position of said image element, wherein said kernel represents a point spreading function realizing said correction blur value, and

(iv) calculating a nominal exposure pattern as a pixel raster graphics defined on the multitude of pixels, by convolution of the graphical representation with the convolution kernel in at least a region of the exposure area which includes said reference point, said nominal exposure pattern being suitable to create a nominal dose distribution on the target;

wherein the convolution calculated in step (iv) corresponds to introducing said correction blur into the nominal exposure pattern, said correction blur increasing the blur of the exposure pattern from the local blur value to said target blur value.

2 . The method of claim 1 , wherein the method takes into account a spatial variation of the elevation of the target within the exposure area relative to the nominal target plane, the method employing a partitioning of the exposure area into a plurality of non-overlapping sub regions, wherein steps (i) to (iv) are done for each of said sub-regions, wherein in step (i) for each of said sub-regions a respective elevation of the target in a respective reference point of the sub-region is calculated, and steps (ii) to (iv) are done using a respective local blur value, and the target blur value is chosen as a value not below the maximum over the set of local blur values among all sub-regions.

3 . The method of claim 2 , wherein the sub regions are realized as parallel stripes, each stripe having a longer side which is oriented substantially parallel to a general writing direction, said general writing direction representing a direction of lines along which subsequent exposures of pixels are performed during an exposure process in said charged-particle apparatus.

4 . The method of claim 3 , wherein the longer side of the stripes extends over a width of the particle beam where it impinges on the target, as measured along said general writing direction.

5 . The method of claim 2 , wherein the aperture array of the pattern definition device is imaged to the target producing a beam array field, and wherein at least some of the sub regions have a width smaller than a width of the image of the aperture array as imaged onto the target, said widths being measured across the general writing direction.

6 . The method of claim 5 , wherein the width of said sub regions is the distance of aperture images on the target along a direction transversal to the general writing direction.

7 . The method of claim 2 , wherein calculation of blur is performed with respect to the two main axes of the nominal target plane, thus obtaining target blur values for each of said two main axes, by choosing, for each main axis, a target blur value as a value not below the maximum over the set of local blur values along the respective main axis among all sub-regions.

8 . The method of claim 7 , wherein an anisotropic kernel is calculated which corresponds to introducing a correction blur value increasing the blur of the exposure pattern from the local blur value to the target blur value for each of the two main axes separately.

9 . The method of claim 7 , wherein an anisotropic kernel is calculated which corresponds to introducing a correction blur value increasing the blur of the exposure pattern from the local blur value to the greater value of the two target blur values for the two main axes.

10 . The method of claim 9 , wherein an anisotropic kernel is calculated which contains correction components which enable correction of the blur of the exposure pattern to an isotropic blur.

11 . The method of claim 10 , wherein said correction components in the anisotropic kernel include off-diagonal correction components.

12 . The method of claim 2 , where the effect of a set of candidate convolution kernels on the total blur of the exposure system is determined by: exposing test structures with said candidate convolution kernels, wherein said candidate convolution kernels are associated with different kernel blur values, respectively, which extend over a predetermined value range; estimating the total blur from measurements of said test structures; and choosing in step (iii) a kernel blur value from the value range such that the total blur of the exposure system matches the target blur.

13 . The method of claim 1 , wherein the kernel describes the blur as a discretized realization of a two-dimensional Gaussian function.

14 . The method of claim 1 , wherein the kernel corresponds to an additional correction blur which is a sum including an elevation-dependent blur and a base blur, where the base blur is calculated as a function of the pattern density around the respective reference point.

15 . The method of claim 1 , wherein the kernel corresponds to an additional correction blur which is a blur determined based on one or more environmental parameter of the processing apparatus, said environmental parameters including barometric pressure, temperatures of specific components of said processing apparatus, temperature at the location of the target, actual beam current of the particle beam.

16 . The method of claim 1 , the method further comprising providing a particle beam, directing the particle beam to a pattern definition device comprising an aperture array composed of a plurality of blanking apertures through which said particle beam penetrates, thus forming a patterned beam consisting of a corresponding plurality of beamlets in accordance with said exposure pattern, directing the patterned beam exiting from the pattern definition device towards an exposure area on the target for writing said desired pattern by exposing a multitude of pixels within said exposure area.

17 . The method of claim 14 , wherein the elevation of at least one reference point on the target is determined by means of a surface metrology device provided in said charged-particle multi-beam processing apparatus.

18 . A method for computing an exposure pattern for exposing a desired pattern on a target in a charged-particle multi-beam processing apparatus, in which a particle beam is directed to and illuminates a pattern definition device comprising an aperture array composed of a plurality of blanking apertures through which said particle beam penetrates for writing said desired pattern by exposing a multitude of pixels within an exposure area on the target by means of said particle beam impinging on the target according to a nominal beam direction, the target being oriented along a nominal target plane substantially perpendicular to said nominal beam direction,

wherein a writing process for writing said desired pattern comprises imaging of the blanking apertures onto the target in each of a sequence of exposure intervals, thus generating a corresponding plurality of aperture images, wherein said imaging of blanking apertures onto the target involves a blur,

the method taking into account an elevation of the target within the exposure area relative to the nominal target plane, as well as a dependence of the blur upon such elevation of the target according to an elevation dependence function,

wherein the desired pattern is provided as a graphical representation composed of a multitude of image elements in a correspondence to said multitude of pixels in the exposure area on the target,

wherein in the pattern definition device said plurality of blanking apertures is arranged in a predetermined arrangement defining mutual positions of the blanking apertures, each blanking aperture being selectively adjustable with regard to a dose value to be exposed through the respective blanking aperture onto a corresponding aperture image generated on the target during a respective exposure interval,

the method comprising:

(i) measuring an elevation of the target at a reference point within the exposure area, said elevation representing a local shift of the target from the nominal target plane at the location of said reference point, and also determining a value of pattern density around said reference point,

(ii) determining, based on said elevation dependence function, a local blur value, said local blur value representing the actual value of blur corresponding to the elevation of the target determined in the previous step, plus an additional blur calculated as a function of the pattern density around the respective reference point,

(iii) determining, based on said local blur value and a given target blur level, an additional correction blur value and calculating a convolution kernel using said correction blur value, said kernel describing a mapping from an image element of the graphical representation to a group of pixels, said group of pixels being centered around a nominal position of said image element, wherein said kernel represents a point spreading function realizing said correction blur value, and

(iv) calculating a nominal exposure pattern as a pixel raster graphics defined on the multitude of pixels, by convolution of the graphical representation with the convolution kernel in at least a region of the exposure area which includes said reference point, said nominal exposure pattern being suitable to create a nominal dose distribution on the target;

wherein the convolution calculated in step (iv) corresponds to introducing said correction blur into the nominal exposure pattern, said correction blur increasing the blur of the exposure pattern from the local blur value to said target blur value.

19 . The method of claim 1 , wherein measuring the elevation of the target at the reference point within the exposure area is performed with a distance sensor.

20 . The method of claim 18 , wherein measuring the elevation of the target at a reference point within the exposure area is performed with a distance sensor.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 13, 2024
From: IMS NANOFABRICATION GMBH
To: IMS NANOFABRICATION GMBH
Reel/Frame 067724/0838 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 1, 2021
From: SPENGLER, CHRISTOPH; NAETAR, WOLF; LEITNER, JOHANNES
To: IMS NANOFABRICATION GMBH
Reel/Frame 055449/0005 →
Priority Claims (1)
EP 20155217 · Feb 3, 2020 · regional
Continuity (1)
Related Publication 20210240074A1 · Aug 5, 2021
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US 12,695,055