Charged particle beam lithography apparatus and charged particle beam pattern writing method

1. A charged particle beam lithography apparatus, comprising:

a plurality of multiple-beam sets, each of which including

a plurality of irradiation sources each generating an independent charged particle beam,

a plurality of objective deflectors, each arranged for a corresponding charged particle beam, and configured to deflect the corresponding charged particle beam to a desired position on a substrate as a target object, and

a plurality of electrostatic or electromagnetic lens fields each to focus the corresponding charged particle beam on the target object;

a plurality of common deflection amplifiers, arranged for each of the plurality of multiple-beam sets, and each of the plurality of common deflection amplifiers being configured to commonly control the plurality of objective deflectors arranged in a same multiple-beam set;

a plurality of individual ON/OFF mechanisms configured to individually turn ON/OFF a beam irradiated from each of the plurality of irradiation sources; and

one or more multiple-beam clusters including the plurality of multiple-beam sets.

2. The apparatus according to claim 1 , further comprising: a stage that mounts a plurality of substrates movably in a predetermined direction, wherein

the stage has the plurality of substrates arranged side by side in a moving direction,

the plurality of multiple-beam sets is arranged in a same direction as the moving direction of the plurality of substrates, and

the plurality of multiple-beam sets continuously writes a pattern on the plurality of substrates while the plurality of substrates moves in the moving direction.

3. The apparatus according to claim 1 , wherein the plurality of multiple-beam sets respectively writes different one or more of exposure pixel groups on a same substrate,

an exposure pixel group to be exposed by a multiple-beam set in the plurality of multiple-beam sets is arranged between exposure pixel groups exposed by a different multiple-beam set in the plurality of multiple-beam sets, and

pattern writing processing of the substrate is completed by the substrate passes through irradiable regions of the plurality of multiple-beam sets.

4. The apparatus according to claim 1 , wherein each of the plurality of multiple-beam sets includes a plurality of charged particle beam columns and

each of the plurality of charged particle beam columns includes

one irradiation source of the plurality of irradiation sources,

a lens mechanism that converges and focuses a charged particle beam emitted from the one irradiation source on the target object, and

one objective deflector of the plurality of objective deflectors.

5. The apparatus according to claim 4 , wherein the lens mechanism in units of the charged particle beam column is a portion of a lens array in which a plurality of lenses is arranged.

6. The apparatus according to claim 4 , wherein the lens mechanism forms an electrostatic or electromagnetic lens field of the plurality of electrostatic or electromagnetic lens fields each to focus the charged particle beam on the target object.

7. The apparatus according to claim 4 , wherein the plurality of charged particle beam columns belonging to each multiple-beam set of the plurality of multiple-beam sets is mechanically fixed collectively.

8. The apparatus according to claim 1 , wherein the one or more multiple-beam clusters are a plurality of multiple-beam clusters and

each of the plurality of multiple-beam clusters writes a pattern on a different one of substrates at a same time.