Heat sink layout designs for advanced FinFET integrated circuits

1. A semiconductor device comprising:

a first transistor in an active device region, the first transistor comprising a first channel region a first source region and a first drain region; and

a second transistor in a guard ring region, the second transistor comprising a second channel region a second source region and a second drain region,

wherein the second channel region comprises a semiconductor material having a higher thermal conductivity than a semiconductor material of the first channel region.

2. The semiconductor device of claim 1 , wherein the first channel region is aligned with the second channel region.

3. The semiconductor device of claim 1 , further comprising:

a first gate structure over the first channel region; and

a second gate structure over the second channel region, wherein the first gate structure is electrically disconnected from the second gate structure.

4. The semiconductor device of claim 1 , further comprising a source contact, wherein the source contact extends over the first source region and the second source region.

5. The semiconductor device of claim 1 , further comprising an isolation structure, wherein a first portion of the isolation structure is between the first channel region and the second channel region.

6. The semiconductor device of claim 5 , wherein the first channel region is between a second portion of the isolation structure and the second channel region.

7. The semiconductor device of claim 1 , wherein the second channel region comprises silicon.

8. The semiconductor device of claim 7 , wherein a dopant concentration in the silicon is less than about 1×10 13 atoms/cm 3 .

9. A semiconductor device, comprising:

a first transistor in an active device region, wherein the first transistor comprising a first channel region,

a second transistor in a guard ring region, wherein the second transistor comprise a second channel region, and a thermal conductivity of the second channel region is greater than a thermal conductivity of the first channel region.

10. The semiconductor device of claim 9 , wherein the second transistor is a fin field effect transistor (FinFET).

11. The semiconductor device of claim 9 , wherein the first transistor is a fin field effect transistor (FinFET).

12. The semiconductor device of claim 9 , wherein a source of the first transistor is electrically connected to a source of the second transistor.

13. The semiconductor device of claim 9 , wherein a gate of the first transistor is aligned with a gate of the second transistor in a plan view.

14. The semiconductor device of claim 9 , further comprising a NT_N layer adjacent to the second transistor.

15. A semiconductor device, comprising:

a substrate;

a transistor in an active device region of the substrate, the transistor comprising a channel region and a source/drain (S/D) region;

a resistor in a passive device region of the substrate;

a contact structure overlying the S/D region; and

an interconnect layer electrically coupling the contact structure and a first terminal of the resistor, wherein a second terminal of the resistor is floating.

16. The semiconductor device of claim 15 , wherein the resistor comprises a doped well.

17. The semiconductor device of claim 16 , further comprising an isolation structure between the channel region and the doped well.

18. The semiconductor device of claim 17 , wherein a depth of the doped well is greater than a depth of the isolation structure.

19. The semiconductor device of claim 15 , further comprising a strained relaxed buffer (SRB) layer below the channel region.

20. The semiconductor device of claim 19 , wherein the SRB layer comprises silicon germanium (SiGe).