Semiconductor processing liquid and method for processing substrate
A semiconductor processing liquid including hydrofluoric acid, and an organic solvent, in which the organic solvent contains a compound represented by the formula below in which X 1 is a single bond or an alkylene group having 1 to 6 carbon atoms, in which an ether bond may be interposed, Y 10 is one of —O—, —(C═O)—, —O—(C═O)—, and —(C═O)—O—, Y 20 is one of —(C═O)—, —O—(C═O)—, and —(C═O)—O—, and Y 11 and Y 21 are each independently a single bond or an alkylene group having 1 to 6 carbon atoms in which an ether bond may be interposed, provided that, X 1 , Y 11 , and Y 21 do not contain hydroxyl groups in structures thereof, and when X 1 is a single bond, Y 10 is not —O—) H 3 C—Y 11 —Y 10 —X 1 —Y 20 —Y 21 —CH 3 (1).
1. A semiconductor processing liquid comprising:
hydrofluoric acid; and
an organic solvent,
wherein the organic solvent contains dipropylene glycol methyl ether acetate, a content of the organic solvent is 70% by mass or more of the entire semiconductor processing liquid, and
wherein the semiconductor processing liquid has a pH of 1.2 or less.
2. The semiconductor processing liquid according to claim 1 , further comprising water.
3. The semiconductor processing liquid according to claim 1 , wherein the semiconductor processing liquid is an etching liquid.
4. The semiconductor processing liquid according to claim 3 , wherein a ratio (BPSG/TEOS) of an etching rate of a boron phosphorus glass film (BPSG) at 25*C with respect to an etching rate of a thermal oxide film (TEOS) at 25° C. is 250 or more.
5. A method for processing a substrate comprising bringing the semiconductor processing liquid according to claim 1 into contact with a semiconductor substrate.