Semiconductor light emitting element and semiconductor light emitting device
A semiconductor light emitting element includes: a substrate; an n-type layer; a light emitting layer; a p-type layer; a p electrode located above the p-type layer; an n electrode located in a region that is above the n-type layer and in which the light emitting layer and the p-type layer are not located; a p-electrode bump connected to the p electrode; an n-electrode bump connected to the n electrode; and an insulation bump located in at least one of a region between the n-electrode bump and the p-type layer and a region whose distance from an end of the p-type layer closer to the n-electrode bump is shorter than a distance from the end to the p-electrode bump, in a plan view of the substrate. A surface of the insulation bump opposite to a surface facing the substrate is insulated from the p electrode and the n electrode.
1. A semiconductor light emitting device, comprising:
a semiconductor light emitting element; and
a mounting substrate, wherein:
the semiconductor light emitting element includes:
a substrate;
an n-type layer located above the substrate and including an n-type semiconductor;
a light emitting layer located above the n-type layer;
a p-type layer located above the light emitting layer and including a p-type semiconductor;
a p electrode located above the p-type layer;
an n electrode located in a region that is above the n-type layer and in which the light emitting layer and the p-type layer are not located;
a conductive p-electrode bump located above the p electrode and electrically connected to the p electrode;
a conductive n-electrode bump located above the n electrode and electrically connected to the n electrode; and
an insulation bump located in at least one region selected from a region between the n-electrode bump and the p-type layer and a region whose distance from an end of the p-type layer closer to the n-electrode bump is shorter than a distance from the end of the p-type layer to a position at which the p-electrode bump is located, in a plan view of the substrate,
the insulation bump includes a film and a columnar conductor, in order from a side on which the substrate is located,
the film is made of a resin containing a filler, and the columnar conductor is made of Au,
the insulation bump is located above an end of the p-type layer facing the n electrode,
the mounting substrate includes a first wiring electrode electrically connected to the p-electrode bump and a second wiring electrode electrically connected to the n-electrode bump,
the insulation bump is located in a region sandwiched between the n electrode and the first wiring electrode, or in a region sandwiched between the p electrode and the second wiring electrode, and
the columnar conductor is in contact with the first wiring electrode or the second wiring electrode.
2. The semiconductor light emitting device according to claim 1 , wherein the insulation bump is located across an end of the p electrode facing the n electrode in the plan view of the substrate.
3. The semiconductor light emitting device according to claim 1 , wherein the mounting substrate further includes a third wiring electrode located between the first wiring electrode and the second wiring electrode and electrically independent of the first wiring electrode and the second wiring electrode.
4. The semiconductor light emitting device according to claim 1 , wherein the insulation bump has a width narrower than a width of a gap between the first wiring electrode and the second wiring electrode, in a section that passes the insulation bump and the n-electrode bump and is perpendicular to a main surface of the substrate.
5. A semiconductor light emitting device, comprising:
a semiconductor light emitting element; and
a mounting substrate, wherein:
the semiconductor light emitting element includes:
a substrate;
an n-type layer located above the substrate and including an n-type semiconductor;
a light emitting layer located above the n-type layer;
a p-type layer located above the light emitting layer and including a p-type semiconductor;
a p electrode located above the p-type layer;
an n electrode located in a region that is above the n-type layer and in which the light emitting layer and the p-type layer are not located;
a conductive p-electrode bump located above the p electrode and electrically connected to the p electrode;
a conductive n-electrode bump located above the n electrode and electrically connected to the n electrode; and
an insulation bump located in at least one region selected from a region between the n-electrode bump and the p-type layer and a region whose distance from an end of the p-type layer closer to the n-electrode bump is shorter than a distance from the end of the p-type layer to a position at which the p-electrode bump is located, in a plan view of the substrate,
the insulation bump includes a film and a columnar conductor, in order from a side on which the substrate is located,
the film is made of a resin containing a filler, and the columnar conductor is made of Au,
a surface of the insulation bump opposite to a surface facing the substrate is insulated from the p electrode and the n electrode, and the insulation bump is located above an end of the p-type layer facing the n electrode,
the mounting substrate includes a first wiring electrode electrically connected to the p-electrode bump and a second wiring electrode electrically connected to the n-electrode bump,
the insulation bump is located in a region sandwiched between the n electrode and the first wiring electrode, or in a region sandwiched between the p electrode and the second wiring electrode, and
in the plan view of the substrate, the insulation bump is located at an end of the p electrode facing the n electrode.