Solid-state device including a conductive bump connected to a metal pattern and method of manufacturing the same

1. A solid-state device, comprising:

a substrate comprising a metal pattern formed thereon;

a solid-state element mounted on the substrate and comprising an electrode; and

a conductive bump in contact with the metal pattern of the substrate and the electrode of the solid-state element,

wherein, in a top view, a contact area of the conductive bump and the electrode comprises a region other than a contact area of the conductive bump and the metal pattern,

wherein, in a plane that includes center lines of opposite-conductivity ones of the conductive bump, a shortest distance between opposite edges of opposite-conductivity ones of the metal pattern is not less than a shortest distance between the center lines of the opposite-conductivity ones of the conductive bump, and

wherein, in the top view, an entirety of a top surface of the metal pattern is located outside the conductive bump.

2. A solid-state device, comprising:

a metal pattern formed on a substrate;

a conductive bump connected to the metal pattern; and

a solid-state element connected to the metal pattern via the conductive bump,

wherein the solid-state element comprises a plurality of electrodes,

wherein a bottom surface level of at least a portion of the conductive bump is substantially equal to a bottom surface level of a portion of the metal pattern at which the metal pattern is connected to the conductive bump,

wherein the conductive bump is in contact with the substrate, a side surface of the metal pattern, and the electrodes of the solid-state element,

wherein X<Y is satisfied where X represents a contact area between the conductive bump and a top surface of the metal pattern, and Y represents a contact area between the conductive bump and the substrate,

wherein a center part of the conductive bump is not in contact with the top surface of the metal pattern as an electrical terminal, and

wherein, in a plan view, an entirety of the top surface of the metal pattern is located outside the conductive bump.

3. The solid-state device according to claim 2 , wherein the side surface of the metal pattern is inclined with respect to a vertical direction.

4. The solid-state device according to claim 2 , wherein the conductive bump comprises a plurality of conductive bumps and the metal pattern comprises a plurality of metal patterns, and

wherein, in a region under the solid-state element, a distance between the conductive bumps is smaller than a distance between the metal patterns connected to the conductive bumps.

5. The solid-state device according to claim 2 , wherein the metal pattern comprises first and second metal patterns, wherein the conductive bump comprises first and second conductive bumps, and

wherein two electrodes of the solid-state element are each connected to the first and second metal patterns via the first and second conductive bumps.