Photoresist compositions and pattern formation methods
A photoresist composition comprises a first polymer formed by free radical polymerization. The first polymer comprises polymerized units formed from a monomer that comprises an ethylenically unsaturated double bond and an acid-labile group; a photoacid generator; a quencher of formula (1): and a solvent.
1. A photoresist composition, comprising:
a first polymer formed by free radical polymerization, the first polymer comprising polymerized units formed from a monomer comprising an ethylenically unsaturated double bond and an acid-labile group;
a photoacid generator;
a quencher of formula (1):
wherein: R 1 is independently a hydrogen atom, C 1 -C 20 linear, C 3 -C 20 branched, or C 3 -20 cyclic alkyl, the alkyl optionally comprising an —O— group other than at an alpha-position with respect to the amide C(O), or C 6 -C 20 aryl; R 2 is independently a hydrogen atom, C 1 -C 20 linear, C 3 -C 20 branched, or C 3 -C 20 cyclic alkyl, or C 6 -C 20 aryl; L is C 1 -C 20 linear or C 3 -C 20 branched alkylene comprising one or more heteroatom-containing groups independently selected from —O—, or —S—; wherein each of R 1 , R 2 , and L may independently be substituted or unsubstituted; wherein the quencher is free of crosslinkable groups; and
a solvent.
2. The photoresist composition of claim 1 , wherein L comprises a plurality of heteroatom-containing groups.
3. The photoresist composition of claim 1 , wherein the one or more heteroatom-containing groups is —O—.
4. The photoresist composition of claim 1 , wherein each R 1 is a C 1 -C 20 linear, C 3 -C 20 branched, or C 3 -C 20 cyclic alkyl, comprising an —O— group other than at an alpha-position with respect to the amide C(O).
5. The photoresist composition of claim 1 , wherein the quencher is chosen from:
6. The photoresist composition of claim 1 , wherein the first polymer comprises a (meth)acrylate polymer.
7. The photoresist composition of claim 1 , further comprising a material that comprises one or more base-labile groups.
8. The photoresist composition of claim 1 , wherein the first polymer further comprises polymerized units of the following formula:
9. A pattern formation method, comprising:
(a) applying a layer of a photoresist composition of claim 1 on a substrate;
(b) pattern-wise exposing the photoresist composition layer to activating radiation; and
(c) developing the exposed photoresist composition layer to provide a resist relief image.
10. The pattern formation method of claim 9 , further comprising transferring a pattern of the resist relief image to the substrate.
11. A photoresist composition, comprising:
a first polymer formed by free radical polymerization, the first polymer comprising polymerized units formed from a monomer comprising an ethylenically unsaturated double bond and an acid-labile group;
a photoacid generator;
a quencher of formula (1):
wherein: R 1 is independently a hydrogen atom, C 1 -C 20 linear, C 3 -C 20 branched, or C 3 -20 cyclic alkyl, the alkyl optionally comprising an —O— group other than at an alpha-position with respect to the amide C(O), or C 6 -C 20 aryl; R 2 is independently a hydrogen atom, C 1 -C 20 linear, C 3 -C 20 branched, or C 3 -C 20 cyclic alkyl, or C 6 -C 20 aryl; wherein L comprises a plurality of heteroatom-containing groups; L is C 1 -C 20 linear or C 3 -C 20 branched alkylene comprising one or more heteroatom-containing groups independently selected from —O—, or —S—, or —N(R 3 )—, wherein R 3 is selected from a hydrogen atom or C 1 -C 20 linear or C 3 -C 20 branched or cyclic alkyl; each of R 1 , R 2 , and L may independently be substituted or unsubstituted; wherein the quencher is free of crosslinkable groups; and a solvent.