Substrate processing device, substrate processing system, control method for substrate processing device, and control method for substrate processing system
Provided is a substrate processing apparatus comprising: a substrate support on which a substrate is mounted; a first radio frequency power supply that outputs first radio frequency power with a first frequency to the substrate support; a second radio frequency power supply that outputs second radio frequency power with a second frequency lower than the first frequency to the substrate support; a sensor that detects reflected waves received from the substrate support and a processor that controls the first radio frequency power supply so that an effective power, which is equal to a difference between the power of the reflected waves detected by the sensor and the output power of the first radio frequency power supply, reaches a set value.
1. A substrate processing apparatus interacting with another substrate processing apparatus that performs a common processing with respect to the substrate processing apparatus, the substrate processing apparatus comprising:
a substrate support on which a substrate is mounted;
a first radio frequency power supply that outputs first radio frequency power with a first frequency to the substrate support;
a second radio frequency power supply that outputs second radio frequency power with a second frequency lower than the first frequency to the substrate support;
a sensor that detects reflected waves received from the substrate support;
a matching circuit that matches an output impedance from the first radio frequency power supply with an impedance detected by the sensor; and
a controller that controls the first radio frequency power supply so that an effective power, which is equal to a difference between a power of the reflected waves detected by the sensor and the output power of the first radio frequency power supply, reaches a set value,
wherein the controller is configured to calculate the effective power using an integrated power of the reflected waves in a range from a fourth frequency to a fifth frequency when the first radio frequency power and the second radio frequency power are supplied at a same time,
wherein a third frequency is an integer multiple of the second frequency,
wherein the fourth frequency is obtained by subtracting the third frequency from the first frequency,
wherein the fifth frequency is obtained by adding the third frequency to the first frequency,
wherein intermodulation distortion in the reflected waves of the substrate processing apparatus is different from the intermodulation distortion in the reflected waves of the another substrate processing apparatus, and
wherein the controller is programmed to compensate the difference in the intermodulation distortion between the reflected waves of the another substrate processing apparatus and the reflected waves of the substrate processing apparatus to adjust an effective power of the another substrate processing apparatus to be equal to the effective power of the substrate processing apparatus.
2. The substrate processing apparatus according to claim 1 , wherein the first frequency is 40 MHz and the second frequency is 400 kHz.
3. The substrate processing apparatus according to claim 1 , wherein the integer multiple is 2.
4. The substrate processing apparatus according to claim 1 , wherein the sensor comprises an impedance sensor.
5. The substrate processing apparatus according to claim 1 , wherein the set value is determined based on the effective power so as to obtain an etching shape based on information associated with previous experiments.
6. The substrate processing apparatus according to claim 1 , wherein the set value is determined based on one or more of a type of a processing gas, a flow rate of the processing gas, and a type of a film to be etched.
7. The substrate processing apparatus according to claim 1 , wherein the sensor is associated with the first radio frequency power supply.
8. A substrate processing system including a plurality of substrate processing apparatuses, each of the apparatuses comprising:
a substrate support on which a substrate is mounted;
a first radio frequency power supply that outputs first radio frequency power with a first frequency to the substrate support;
a second radio frequency power supply that outputs second radio frequency power with a second frequency lower than the first frequency to the substrate support;
a sensor that detects reflected waves received from the substrate support;
a matching circuit that matches an output impedance from the first radio frequency power supply with an impedance detected by the sensor; and
a controller that controls the first radio frequency power supply so that an effective power, which is equal to a difference between a power of the reflected waves detected by the sensor and the output power of the first radio frequency power supply, reaches a set value,
wherein set values of the plurality of substrate processing apparatuses are equal to one another,
wherein the controller is configured to calculate the effective power using an integrated power of the reflected waves in a range from a fourth frequency to a fifth frequency when the first radio frequency power and the second radio frequency power are supplied at a same time,
wherein a third frequency is an integer multiple of the second frequency,
wherein the fourth frequency is obtained by subtracting the third frequency from the first frequency,
wherein the fifth frequency is obtained by adding the third frequency to the first frequency,
wherein intermodulation distortion in the reflected waves of the substrate processing apparatuses is different, and
wherein the controller is programmed to compensate the difference in the intermodulation distortion between the reflected waves of the substrate processing apparatuses to adjust the effective power of one of the substrate processing apparatuses to be equal to each other.
9. The substrate processing system according to claim 8 , wherein the first frequency is 40 MHz and the second frequency is 400 kHz.
10. The substrate processing system according to claim 8 , wherein the integer multiple is 2.
11. The substrate processing system according to claim 8 , wherein each sensor comprises an impedance sensor.
12. The substrate processing system according to claim 8 , wherein each set value is determined based on one or more of a type of a processing gas, a flow rate of the processing gas, and a type of a film to be etched.
13. The substrate processing system according to claim 8 , wherein each set value is established based on the effective power so as to obtain an etching shape based on information associated with previous experiments.
14. The substrate processing system according to claim 8 , wherein each sensor is associated with each respective first radio frequency power supply.