Semiconductor device and manufacturing method thereof
A semiconductor device includes a substrate, a first semiconductor fin, a second semiconductor fin, a gate structure, a plurality of source/drain structures, a shallow trench isolation (STI) oxide, and a dielectric layer. The first semiconductor fin extends upwardly from the substrate. The second semiconductor fin extends upwardly from the substrate. The gate structure extends across the first and second semiconductor fins. The source/drain structures are on the first and second semiconductor fins. The STI oxide extends continuously between the first and second semiconductor fins and has a U-shaped profile when viewed in a cross section taken along a lengthwise direction of the gate structure. The dielectric layer is partially embedded in the STI oxide and has a U-shaped profile when viewed in the cross section taken along the lengthwise direction of the gate structure.
1. A semiconductor device, comprising:
a substrate;
a first semiconductor fin extending upwardly from the substrate;
a second semiconductor fin extending upwardly from the substrate;
a gate structure extending across the first and second semiconductor fins;
a plurality of source/drain structures on the first and second semiconductor fins;
a shallow trench isolation (STI) oxide extending continuously between the first and second semiconductor fins and having a U-shaped profile when viewed in a cross section taken along a lengthwise direction of the gate structure; and
a dielectric layer partially embedded in the STI oxide and having a U-shaped profile when viewed in the cross section taken along the lengthwise direction of the gate structure, wherein the dielectric layer has a higher impurity concentration than the STI oxide.
2. The semiconductor device of claim 1 , wherein the STI oxide is doped with carbon.
3. The semiconductor device of claim 1 , wherein the STI oxide is doped with nitrogen.
4. The semiconductor device of claim 1 , wherein the dielectric layer is doped with carbon.
5. The semiconductor device of claim 1 , wherein the dielectric layer is doped with nitrogen.
6. The semiconductor device of claim 1 , wherein a carbon concentration in the dielectric layer is in a range from about 5% to about 15%, and a carbon concentration in the STI oxide is in a range from about 1% to about 3%.
7. The semiconductor device of claim 1 , wherein a nitrogen concentration in the dielectric layer is in a range from about 10% to about 30%, and a nitrogen concentration in the STI oxide is in a range from about 5% to about 20%.
8. The semiconductor device of claim 1 , wherein the dielectric layer is doped with an impurity different than an impurity in the STI oxide.
9. The semiconductor device of claim 1 , wherein the dielectric layer is doped with an impurity that is the same as an impurity in the STI oxide.
10. A semiconductor device, comprising:
a substrate;
a first semiconductor fin extending upwardly from the substrate;
a first gate structure extending across the first semiconductor fin;
a second semiconductor fin extending upwardly from the substrate;
a second gate structure extending across the second semiconductor fin;
a first dielectric layer extending continuously between a longitudinal end of the first semiconductor fin and a longitudinal end of the second semiconductor fin and having a U-shaped profile when viewed in a cross section taken along a lengthwise direction of the first semiconductor fin; and
a second dielectric layer embedded in the first dielectric layer and having a topmost surface set back from a topmost surface of the first dielectric layer.
11. The semiconductor device of claim 10 , wherein the topmost surface of the first dielectric layer is level with a topmost surface of the first semiconductor fin.
12. The semiconductor device of claim 10 , wherein the first dielectric layer is in contact with a top surface of the substrate.
13. The semiconductor device of claim 10 , further comprising a third dielectric layer above the second dielectric layer and embedded in the first dielectric layer, wherein the third dielectric layer has a higher impurity concentration than the second dielectric layer.
14. The semiconductor device of claim 13 wherein the third dielectric layer is doped with germanium.
15. The semiconductor device of claim 13 , wherein the third dielectric layer is doped with aluminum.
16. A method for manufacturing a semiconductor device, comprising:
forming first and second semiconductor fins extending upwardly from a substrate;
forming an isolation oxide layer over and continuously between the first and second semiconductor fins;
forming a dielectric layer over the isolation oxide layer;
performing a first chemical mechanical polish (CMP) process on the dielectric layer;
after performing the first CMP process, etching back the dielectric layer to fall below a top surface of the isolation oxide layer;
after etching back the dielectric layer, implanting the dielectric layer with an impurity;
after implanting the dielectric layer, recessing the top surface of the isolation oxide layer to a level lower than a top surface of the dielectric layer; and
forming sources/drains structure on the first and second semiconductor fins.
17. The method of claim 16 , further comprising:
after implanting the dielectric layer, performing a second CMP process on the isolation oxide layer, wherein the second CMP process stops at the implanted dielectric layer.
18. The method of claim 16 , wherein the impurity comprises germanium.
19. The method of claim 16 , wherein the impurity comprises carbon.
20. The semiconductor device of claim 1 , wherein the dielectric layer has a topmost surface in a position level with a topmost surface of the first semiconductor fin.